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Presents a study which reported the observations of a damped intensity oscillation using reflection high-energy electron diffraction during the growth of gallium arsenide by chemical beam epitaxy using triethylgallium and arsine. Experimental procedure; Description of the appearance of the surface reconstruction associated with an ordered two-dimensional gallium plane; Reason that the lack of any memory effect for the arsenide flux is inherent to the chemical beam epitaxy process.

Presents a study which examined the utilization of chemical beam epitaxy to incorporate thermal atomic beams for doping. Details of the growth system; Dopant profile measurements; Description of the epitaxial technique.

Discusses a study on indium-gallium-arsenic lattice matched to indium phosphide substrate and grown on by chemical epitaxy (CBE). Surface morphologies; Relevance of the electron concentration and mobilities to the source purity of the trimethylarsine used; Composition and thickness uniformities of CBE.

Studies the molecular-beam epitaxy growth conditions, surface reconstructions and surface morphologies of aluminium antimonide, gallium antimonide and InAs growh on gallium antimonide. Details on the growth of aliminum antimonide on gallium antimonide; Information on the surface reconstruction for InAs; RHEED pattern for the growth of InAsSb lattice matched to gallium antimonide.

Reports on the transmission electron microscopy and x-ray double-crystal diffractometry study of the lattice-mismatch-induced defect structures indium phosphide (InP) grown on gallium arsenide substrate and vice versa by chemical beam epitaxy. Preparation of the samples; Evolution of dislocation structure across the thickness of the film; Information on the interfacial defect structure and evidence of initial island nucleation.

Discusses a study that reported the electrical measurements on structures by doping barriers of a gallium arsenide quantum well. Details on the Hall-effect and capacitance-voltage measurements; Use of gas-source molecular-beam epitaxy methods in growing the quantum well transistors; Result of the study.

Presents a study which proposed a surface chemical kinetics model governing the growth rate of gallium arsenide by using chemical beam epitaxy process. Derivation of the model of the growth kinetics; Measurement of reflection high-energy electron diffraction; Results and discussion; Conclusions.

Focuses on multiple quantum wells of indium-gallium-arsenic/indium phosphide grown by chemical beam epitaxy. Fluctuations in the quantum wells along the growth direction; Halfwidths of single line emission samples; Trends in the behavior of the multiline components.

Presents a study which examined a morphological defect structure, cross-hatch and the experimental circumstances that lead to its occurrence during gallium arsenide homoepitaxy. Experimental details; Results and discussion; Conclusion.

Provides information on a study which calculated the effect of misfit stress on the compositional stability of strained-layer hetero-epitaxial compound semiconductor structures. Lattice parameters of quaternary and quintary systems; Stress-induced interdiffusion of matrix elements; Compositional stability of quaternary/binary heterostructures.

Presents a study that formed silicon oxide by molecular-beam deposition. Chemical properties of silicon oxide; Suitability of silicon oxide as a dielectric for many semiconductor device applications; Thermal evaporation of silicon oxide.

Presents a study that evaluated the tunneling transport of several indium gallium arsenide-indium phosphide superlattices grown by chemical beam epitaxy. Methodology; Analysis of the formation of a high-field domain in the superlattice; Examination of the temperature and magnetic field dependence of the high-field domain.

Describes the properties of 1.5-μm double-channel planar buried heterostructure (DC-PBH) laser fabrication. Features of a gallium-indium-arsenic-phosphorous/indium phosphide DC-PBH laser; Frequency dependence of the relative intensity noise; Measurement of temperatures.

Presents a study that described the growth conditions to achieve high-quality indium-arsenic-antimony (InAsSb) alloy and abrupt InAsSb/gallium-Sb heterostructure by molecular-beam epitaxy. Reliability of optical pyrometry in determining the growth temperature; Importance of a stable substrate temperature in achieving homogeneous InAsSb composition; Use of double x-ray diffraction measurement and other methods to evaluate the quality of the epilayers.

Focuses on a type of photoconductivity in semiconductor heterojunctions. Partial screening of the electric field in the wells; Measurement of photocurrent with lock-in techniques; Reason for the deviation of the photocurrent from the proportionality.

Proposes a grating fabrication technique for optical devices in indium phosphide/indium-gallium-arsenic-phosphorus system. Application of selective and anisotropic masking layers grown by chemical beam epitaxy; Use of ultrathin semiconductor mass for the deep etch; Steps of the crystal growth sequence.

Presents a study which determined the measurements of current-voltage characteristics of gallium arsenide double-barrier resonant tunneling structure (DBRTS). Influence of space-charge layers formed in a biased device on charge transport in DBRTS; Methodology; Results and discussion.

Presents a study which examined the growth by molecular beam epitaxy of high-quality Ga[sub0.85]In[sub0.15]As[sub0.13]Sb[sub0.87] active layers with Al[sub0.4]Ga[sub0.6]As[sub0.035]Sb[sub0.96] cladding layers on GaSb substrates by molecular beam epitaxy. Lattice match of the active layer; Observations of optically pumped laser oscillation; Conclusion.

Presents a study which observed large electrical polarization effects in the time photoresponse of multilayer heterostructure diodes. Manifestation of the phenomenon; Factor associated with the effect; Result that occurred when the voltage is spanned in forward bias.