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OBJECTIVE: Janus Kinase (JAK) inhibitors have been extensively evaluated for their potential in the management of various diseases. Despite previous research on this topic, there is a lack of bibliometric analysis that summarizes research trends on JAK inhibitors. This study aims to provide a comprehensive overview of the top 100 most frequently cited studies on JAK inhibitors over the last ten years. MATERIALS AND METHODS: The Web of Science database was used to screen and extract relevant studies on JAK inhibitors. The top 100 studies most cited within the JAK inhibitor-related research were identified and evaluated, and various data such as the year of publication, study focus and keywords, author information, and number of citations were extracted and analyzed for further examination. RESULTS: In the top 100 most cited studies of JAK inhibitors, more than 70% of studies focused on the role of JAK inhibitors in disease treatments, with 42% of these studies focused on using JAK inhibitors as treatment for autoimmune diseases and 19 of them focused on the treatment of neoplasms. Time trend analysis revealed that the keywords “tofacitinib”, “atopic dermatitis”, and “rheumatoid arthritis” were widely mentioned in 2016, while new trends emerged in 2018, with “ruxolitinib” and “baricitinib” being more commonly mentioned. CONCLUSIONS: The top 100 most frequently cited studies on JAK inhibitors focused primarily on the safety and efficacy of these inhibitors in the management of various diseases, particularly inflammatory diseases and neoplasms. The results can serve as a valuable reference for rheumatologists and immunologists interested in the development of JAK inhibitors and expanding future research fields. [ABSTRACT FROM AUTHOR]

We report on the power and microwave noise performance of AlGaN/GaN high electron-mobility transistors (HEMTs) at frequencies f > 18 GHz (K- and K a-bands). At 20 GHz, a record continuous-wave output power of 1.6 W has been achieved on an eight-finger 500-/[micro]m total gate-periphery device. At 29 GHz, a 120-/[micro]m gate-periphery device showed a pulsed output density of 1.6 W/mm with an associated gain of 6.7 dB and power-added efficiency of 26 %. Minimum noise figure of 1.5 dB has been achieved on a 0.2/[micro]m x 200/[micro]m device at 26 GHz. The data demonstrate the viability of AlGaN/GaN HEMTs for high-frequency power and low-noise amplifier applications. Index Terms--GaN, high electron-mobility transistor (HEMT), K-band, microwave noise, microwave power.

The breakdown behavior of a heterodimensional two-dimensional MESFET has been investigated. It is a novel side-gated FET made from a double-sided planar-doped AlGaAs/InGaAs PHEMT material. Its on-state breakdown behavior reduces impact ionization at high drain-source bias leading to a low output conductance of less than 6 mS/mm for V(sub GS) = 0 V and a low gate leakage current of less than 100 nA. Its off-state drain-source and drain-gate breakdown voltages were measured to be at 20 and 21 V.