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345 results on '"Trusso, S"'

34. Light emitting porous silicon diode based on a silicon/porous silicon heterojunction

Author

Pavesi, L., Chierchia, R., Bellutti, P., Lui, A., Fuso, F., Labardi, M., Pardi, L., Sbrana, F., Allegrini, M., Trusso, S., Vasi, C., Ventura, P.J., Costa, L.C., Carmo, M.C., and Bisi, O.

Subjects
Light-emitting diodes -- Research, Optoelectronics -- Research, Quantum electronics -- Research, Physics
Abstract

A new structure is presented for improving the external quantum efficiency of porous silicon light emitting diodes. The structure is based on a silicon/porous silicon heterojunction.

Published
1999

47. Materials analysis opportunities on the new neutron imaging facility IMAT@ISIS

Author

Minniti, T, Kockelmann, W, Burca, G, Kelleher, J, Kabra, S, Zhang, S, Pooley, D, Schooneveld, E, Mutamba, Q, Sykora, J, Rhodes, N, Pouzols, F, Nightingale, J, Aliotta, F, Bonaccorsi, L, Ponterio, R, Salvato, G, Trusso, S, Vasi, C, Tremsin, A, Gorini, G, Minniti T., Kockelmann W., Burca G., Kelleher J. F., Kabra S., Zhang S. Y., Pooley D. E., Schooneveld E. M., Mutamba Q., Sykora J., Rhodes N. J., Pouzols F. M., Nightingale J. B., Aliotta F., Bonaccorsi L. M., Ponterio R., Salvato G., Trusso S., Vasi C., Tremsin A. S., Gorini G., Minniti, T, Kockelmann, W, Burca, G, Kelleher, J, Kabra, S, Zhang, S, Pooley, D, Schooneveld, E, Mutamba, Q, Sykora, J, Rhodes, N, Pouzols, F, Nightingale, J, Aliotta, F, Bonaccorsi, L, Ponterio, R, Salvato, G, Trusso, S, Vasi, C, Tremsin, A, Gorini, G, Minniti T., Kockelmann W., Burca G., Kelleher J. F., Kabra S., Zhang S. Y., Pooley D. E., Schooneveld E. M., Mutamba Q., Sykora J., Rhodes N. J., Pouzols F. M., Nightingale J. B., Aliotta F., Bonaccorsi L. M., Ponterio R., Salvato G., Trusso S., Vasi C., Tremsin A. S., and Gorini G.

Abstract

A new neutron imaging and diffraction facility, called IMAT, is currently being commissioned at the ISIS pulsed neutron spallation source. IMAT will take advantage of neutron time-of-flight measurement techniques for flexible neutron energy selection and effective energy discrimination. The instrument will be completed and commissioned within the next few months, after neutrons have been recently delivered to the sample area. From 2016 IMAT will enable white-beam neutron radiography and tomography as well as energy-dependent neutron imaging. The facility will offer a spatial resolution down to 50 microns for a field of view of up to 400 cm2. IMAT will be operated as a user facility for material science applications and will be open for developments of time-of-flight imaging methods.

Published
2016

50. Bonding configurations and optical band gap for nitrogenated amorphous silicon carbide films prepared by pulsed laser ablation.

Author

Trusso, S., Barreca, F., and Neri, F.

Subjects
*SILICON carbide thin films, *PULSED laser deposition, *AMORPHOUS semiconductors, *OPTICS
Abstract

SiC[sub χ]N[sub y] thin films have been deposited by ablating a sintered silicon carbide target in a controlled nitrogen atmosphere. The structural and the optical properties of the films were investigated by x-ray photoelectron spectroscopy (XPS) and spectroscopic ellipsometry. The nitrogen content was found to be dependent on the nitrogen partial pressure and did not exceed 7.5%. XPS measurements of the N 1s, C 1s, and Si 2p photoelectron peaks pointed out the nitrogen preferential bonding to silicon atoms with a concurrent decrease of the Si-C and Si-Si bond density. A slight increase of sp³ hybridized carbon bonds has been also observed. The optical band gap E[sub g],, values, obtained from fitting the ellipsometric data with an appropriate multiple layers model, were found to increase up to 2.4 eV starting from a value of 1.6 eV for a non-nitrogenated sample. This finding was related to progressive substitution of the weaker Si-Si bonds by the stronger Si-C and Si-N ones which, presumably, involves the removal of electronic states lying at the band edges. [ABSTRACT FROM AUTHOR]

Published
2002
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