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4. Short Notices

Author

Ullmann, Stephen, Spencer, T. J. B., Purser, J. W. R., Pring, J. T., Wilson, R. M., Potter, Simeon, Timmer, B. J., Brewer, D. S., Muir, Kenneth, Cawley, A. C., Rees, D. G., Winny, James, Davis, B. E. C., Roberts, R. J., Kermode, Frank, Bradley, John L., Lawlor, John, King, R. W., Lodge, David, Lawrence, L. D., Ginestier, Paul, Topsfield, L. T., Taylor, A. Carey, Strachan, W. J., Horne, P. R., and Trotter, G. D.

Published
1961

5. Characterization of the interface between a normal metal and a superconductor using magnetic screening

Author

Soulen, R.J.,Jr., Claassen, J.H., Osofsky, M.S., Trotter, G., Woods, G.T., Ovchinnikov, Yu.N., Kresen, V., and Tralshawala, N.

Subjects
Metals -- Magnetic properties, Degassing of metals -- Magnetic properties, Proximity detectors -- Usage, Superconductivity -- Research, Business, Electronics, Electronics and electrical industries
Abstract

Discussing the magnetic screening for a N/I/S trilayer as function of a single parameter W, which encompasses all properties of the interface to the extent that it influences the discontinuity of the other parameters is presented. It is concluded that the techniques used to characterize well the interface of finished devices, which incorporate N/I/S interfaces.

Published
2003

8. Invited editorial

Author

Sagar, Peter, Tekkis, P. P., Bentley, A. J. E., South, L. M., Trotter, G. A., Ellul, J. P. M., Kocher, H. M., and Cullen, P. T.

Published
2000
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14. Novel approach for fabricating transparent and conducting SWCNTs/ITO Thin Films for Optoelectronic Applications

Author

Taha, H., Jiang, Z-T, Yin, C-Y, Henry, D.J., Zhao, X., Trotter, G., Amri, A., Taha, H., Jiang, Z-T, Yin, C-Y, Henry, D.J., Zhao, X., Trotter, G., and Amri, A.

Abstract

Single-walled carbon nanotubes (SWCNTs) incorporated in indium tin oxide (ITO) were developed to fabricate transparent conductive thin films via a sol-gel spin coating technique. The fabricated thin films were annealed at 350 °C. The effects of incorporating SWCNTs and varying film thickness on crystal structure were systematically investigated by X-ray diffraction (XRD), Raman shift, surface elemental compositions, surface topography and roughness, optoelectronic characteristics, and mechanical properties. XRD results confirmed the body-centered cubic structure of indium oxide polycrystalline phase, indicating that the structural properties of the ITO films were not significantly altered by incorporating CNTs. The presence of CNTs in the ITO matrix was confirmed by analyses of Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and energy dispersive X-ray spectroscopy (EDX). FESEM images revealed the formation of SWCNTs/ITO nanoparticles, and the average crystallite size increased along with increasing film thickness. Electrical characteristics also improved as the film thickness increased. The lowest electrical resistivity (4.6 × 10-4 ω cm), as well as the highest carrier concentration (3.3 × 1020 cm-3) and carrier mobility (41 cm2/V s) were achieved from the 320 nm thick film. However, the optical transparency decreased from 91 to 87.5% as the film thickness increased from 150 to 320 nm. The hardness and Young's modulus of the prepared samples improved, with the increase of SWCNTs doping level, and achieved the maximum values of 28 and 306 GPa, respectively.

Published
2018

25. Growth and Magnetic Properties of Single Crystal [Co.sub.2]MnX (X = Si, Ge) Heusler Alloys

Author

Cheng, S. F., Nadgorny, B., Bussmann, K., Carpenter, E. E., Das, B. N., Trotter, G., Raphael, M. P., and Harris, V. G.

Subjects
Magnetism -- Research, Crystals -- Research, Business, Electronics, Electronics and electrical industries
Abstract

Half-metallic (HM) ferromagnetic materials have recently drawn intense interests due to their potential use in magnetoelectronic devices. Co-based Heusler alloys of the type [Co.sub.2]MnX (X = Si, Ge), predicted to be HM by first principles band structure calculations, are of particular interest since they alone possess Curie temperatures in excess of 900 K. Since the spin polarization (P) is believed to be sensitive to antisite defects that are likely to occur in vapor-quenched thin film synthesis, single crystals of [Co.sub.2]MnX (X = Si, Ge) were prepared using the tri-arc Czochralski method. X-ray diffraction, including Laue backscattering, was employed to determine the high crystalline quality of these crystals. SQUID magnetometry measured a magnetic moment per formular unit that is close to the calculated value indicating that these alloys may in fact be HM. However, point contact Andreev reflection, a technique that has reliably measured high P in Cr[O.sub.2], measures P values for these crystals of 50-60%, well below their theoretical values. The reduced spin polarization may be due to the effects of crystal symmetry breaking at the surface or the presence of antisite defects, or that these materials are not truly half-metallic. Index Terms--[Co.sub.2]MnGe, [Co.sub.2]MnSi, Heusler alloy, spin polarization.

Published
2001

35. Impulsive and gradual hard X-ray sources in a solar flare

Author

Vilmer, N, Trotter, G, and Kane, S. R

Subjects
Solar Physics
Abstract

The paper reports recent observations of a relatively large hard X-ray burst with well developed impulsive and gradual components, that was associated with a relatively modest optical flare on Aug. 14, 1979. The impulsive X-ray source has a much higher ion density and the electron injection in the phase is shorter in duration consisting of fewer energetic electrons than in the gradual phase. The gradual X-ray source seems to consist of a lower density region, probably bounded by a magnetic arch in which the energetic electrons are perfectly trapped. The different temporal development of the impulsive and gradual hard X-ray components suggest large differences in the physical parameters of the ambient plasma.

Published
1982

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