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Wide band gap semiconductors are very attractive because of their broad applications as electronics and optoelectronics materials − GaN-based materials being by far the most promising. For the production of such nitride-based optical and power devices, metal-organic chemical vapour deposition (MOCVD) is routinely used. However, this has disadvantages, such as the large consumption of ammonia gas, and the need for high growth temperature. To go beyond such a limit, in this study we successfully developed a remote plasma assisted MOCVD (RPA-MOCVD) approach for the epitaxial growth of high-quality GaN/AlGaN heterostructures on 4H-SiC substrates. Our RPA-MOCVD has the advantages of lower growth temperature (750 °C) compared to conventional MOCVD route, and the use of a remote N2/H2 plasma instead of ammonia for nitrides growth, generating in situ the NHx (x = 0−3) species needed for the growth. As assessed by structural, morphological, optical and electrical characterisation, the proposed strategy provides an overall cost-effective and green approach for high-quality GaN/AlGaN heteroepitaxy, suitable for high electron mobility transistors (HEMT) technology.

The use of graphene derivatives as supports improves the properties of heterogeneous catalysts, with graphene oxide (GO) being the most frequently employed. To explore greener possibilities as well as to get some insights into the role of the different graphenic supports (GO, rGO, carbon black, and graphite nanoplatelets), we prepared, under the same standard conditions, a variety of heterogeneous Cu catalysts and systematically evaluated their composition and catalytic activity in azide-alkyne cycloadditions as a model reaction. The use of sustainable graphite nanoplatelets (GNPs) afforded a stable CuI catalyst with good recyclability properties, which are compatible with flow conditions, and able to catalyze other reactions such as the regio- and stereoselective sulfonylation of alkynes (addition reaction) and the Meerwein arylation (single electron transfer process).