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6 results on '"Triloki, Triloki"'

1. Time performance of Analog Pixel Test Structures with in-chip operational amplifier implemented in 65 nm CMOS imaging process

Author

Rinella, Gianluca Aglieri, Aglietta, Luca, Antonelli, Matias, Barile, Francesco, Benotto, Franco, Beolè, Stefania Maria, Botta, Elena, Bruno, Giuseppe Eugenio, Carnesecchi, Francesca, Colella, Domenico, Colelli, Angelo, Contin, Giacomo, De Robertis, Giuseppe, Dumitrache, Florina, Elia, Domenico, Ferrero, Chiara, Fransen, Martin, Kluge, Alex, Kumar, Shyam, Lemoine, Corentin, Licciulli, Francesco, Lim, Bong-Hwi, Loddo, Flavio, Mager, Magnus, Marras, Davide, Martinengo, Paolo, Pastore, Cosimo, Patra, Rajendra Nath, Perciballi, Stefania, Piro, Francesco, Prino, Francesco, Ramello, Luciano, Ramos, Arianna Grisel Torres, Reidt, Felix, Russo, Roberto, Sarritzu, Valerio, Savino, Umberto, Schledewitz, David, Selina, Mariia, Senyukov, Serhiy, Sitta, Mario, Snoeys, Walter, Sonneveld, Jory, Suljic, Miljenko, Triloki, Triloki, and Turcato, Andrea

Subjects
Physics - Instrumentation and Detectors
Abstract

In the context of the CERN EP R&D on monolithic sensors and the ALICE ITS3 upgrade, the Tower Partners Semiconductor Co (TPSCo) 65 nm process has been qualified for use in high energy physics, and adopted for the ALICE ITS3 upgrade. An Analog Pixel Test Structure (APTS) featuring fast per pixel operational-amplifier-based buffering for a small matrix of four by four pixels, with a sensor with a small collection electrode and a very non-uniform electric field, was designed to allow detailed characterization of the pixel performance in this technology. Several variants of this chip with different pixel designs have been characterized with a (120 GeV/$c$) positive hadron beam. This result indicates that the APTS-OA prototype variants with the best performance achieve a time resolution of 63 ps with a detection efficiency exceeding 99% and a spatial resolution of 2 $\mu$m, highlighting the potential of TPSCo 65nm CMOS imaging technology for high-energy physics and other fields requiring precise time measurement, high detection efficiency, and excellent spatial resolution.

Published
2024
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2. Characterization of LAPPD timing at CERN PS testbeam

Author

Bhattacharya, Deb Sankar, Bressan, Andrea, Chatterjee, Chandradoy, Torre, Silvia Dalla, Gregori, Mauro, Kiselev, Alexander, Levorato, Stefano, Martin, Anna, Minutoli, Saverio, Osipenko, Mikhail, Rai, Richa, Ripani, Marco, Tessarotto, Fulvio, and Triloki, Triloki

Subjects
Physics - Instrumentation and Detectors, High Energy Physics - Experiment
Abstract

Large Area Picosecond PhotoDetectors (LAPPDs) are photosensors based on microchannel plate technology with about 400 cm$^2$ sensitive area. The external readout plane of a capacitively coupled LAPPD can be segmented into pads providing a spatial resolution down to 1 mm scale. The LAPPD signals have about 0.5 ns risetime followed by a slightly longer falltime and their amplitude reaches a few dozens of mV per single photoelectron. In this article, we report on the measurement of the time resolution of an LAPPD prototype in a test beam exercise at CERN PS. Most of the previous measurements of LAPPD time resolution had been performed with laser sources. In this article we report time resolution measurements obtained through the detection of Cherenkov radiation emitted by high energy hadrons. Our approach has been demonstrated capable of measuring time resolutions as fine as 25-30 ps. The available prototype had performance limitations, which prevented us from applying the optimal high voltage setting. The measured time resolution for single photoelectrons is about 80 ps r.m.s., Comment: 35 pages, 23 figures

Published
2023

3. Characterization of LAPPD timing at CERN PS testbeam

Author

Bhattacharya, Deb Sankar, Bressan, Andrea, Chatterjee, Chandradoy, Torre, Silvia Dalla, Gregori, Mauro, Kiselev, Alexander, Levorato, Stefano, Martin, Anna, Minutoli, Saverio, Osipenko, Mikhail, Rai, Richa, Ripani, Marco, Tessarotto, Fulvio, and Triloki, Triloki

Published
2024
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4. Characterization of Monolithic Active Pixel Sensors for future collider experiments.

Author

Colelli, Angelo, Barile, Francesco, Bruno, Giuseppe Eugenio, Di Bari, Domenico, Franco, Antonio, Kumar, Shyam, Pastore, Cosimo, Nath Patra, Rajendra, and Triloki, Triloki

Subjects
DETECTORS, NEURAL circuitry, ELECTRICAL test equipment, GEOMETRIC vertices, INTEGRATED circuits
Abstract

In high-energy physics experiments, Monolithic Active Pixel Sensors (MAPS) have become crucial components of vertex and tracking detectors over the past decade due to the integration of readout circuitry with the detection volume in a single chip. The requirement to achieve precise tracking and vertexing capabilities for upgrade of HEP experiments, such as ALICE at LHC and ePIC at EIC, has implied a strong R&D towards an ultra-thin (a few tens of μm), bent, wafer-scale silicon sensors produced with stitching technology. Recent ongoing activities on CMOS silicon sensor testing performed at the INFN Laboratory in Bari will be described. The characterization of analogue silicon pixel sensors of 65 nm CMOS technology using electrical test pulsing and 55Fe as a soft X-ray source will be discussed. Furthermore, a study on timing performance will be presented. [ABSTRACT FROM AUTHOR]

Published
2024
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6. X-ray diffraction line profile analysis of KBr thin films

Author

R. Rai, Bhartendu K. Singh, and Triloki Triloki

Subjects
010302 applied physics, Diffraction, Condensed Matter - Materials Science, Materials science, Condensed matter physics, Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences, 02 engineering and technology, General Chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, Stress (mechanics), Microcrystalline, 0103 physical sciences, X-ray crystallography, General Materials Science, Crystallite, Texture (crystalline), Dislocation, Thin film, 0210 nano-technology
Abstract

In the present work, the microcrystalline characteristics of KBr thin films have been investigated by evaluating the breadth of diffraction peak. The Williamson–Hall, the Size-Strain plot and the single-line Voigt methods are employed to deconvolute the finite crystallite size and microstrain contribution from the broaden X-ray profile. The texture coefficient and dislocation density have been determined along each diffraction peak. Other relevant physical parameters such as stress, Young’s modulus and energy density are also estimated using uniform stress deformation and uniform deformation energy density approximation of Williamson–Hall method.

Published
2017

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