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Graphene nanoribbons (GNRs) with atomically precise width and edge structures are a promising class of nanomaterials for optoelectronics, thanks to their semiconducting nature and high mobility of charge carriers. Understanding the fundamental static optical properties and ultrafast dynamics of charge carrier generation in GNRs is essential for optoelectronic applications. Combining THz spectroscopy and theoretical calculations, we report a strong exciton effect with binding energy up to 700 meV in liquid-phase-dispersed GNRs with a width of 1.7 nm and an optical bandgap of 1.6 eV, illustrating the intrinsically strong Coulomb interactions between photogenerated electrons and holes. By tracking the exciton dynamics, we reveal an ultrafast formation of excitons in GNRs with a long lifetime over 100 ps. Our results not only reveal fundamental aspects of excitons in GNRs (gigantic binding energy and ultrafast exciton formation etc.), but also highlight promising properties of GNRs for optoelectronic devices., Comment: 26 pages, 4 figures, 5 pages Supplementary Information

In graphene nanoribbons (GNRs), the lateral confinement of charge carriers opens a band gap, the key feature to enable novel graphene-based electronics. Successful synthesis of GNRs has triggered efforts to realize field-effect transistors (FETs) based on single ribbons. Despite great progress, reliable and reproducible fabrication of single-ribbon FETs is still a challenge that impedes applications and the understanding of the charge transport. Here, we present reproducible fabrication of armchair GNR-FETs based on a network of nanoribbons and analyze the charge transport mechanism using nine-atom wide and, in particular, five-atom-wide GNRs with unprecedented conductivity. We show formation of reliable Ohmic contacts and a yield of functional FETs close to unity by lamination of GNRs on the electrodes. Modeling the charge carrier transport in the networks reveals that this process is governed by inter-ribbon hopping mediated by nuclear tunneling, with a hopping length comparable to the physical length of the GNRs. Furthermore, we demonstrate that nuclear tunneling is a general charge transport characteristic of the GNR networks by using two different GNRs. Overcoming the challenge of low-yield single-ribbon transistors by the networks and identifying the corresponding charge transport mechanism puts GNR-based electronics in a new perspective.