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Acesso restrito: Texto completo. p. 89-94 Submitted by JURANDI DE SOUZA SILVA (jssufba@hotmail.com) on 2012-03-21T18:12:30Z No. of bitstreams: 1 __ac.els-cdn.com_S003811...173c966f474374957ce5c7d2c29f9.pdf: 174774 bytes, checksum: c4ef42314fe2e06c3baed97bc61c0d88 (MD5) Made available in DSpace on 2012-03-21T18:12:30Z (GMT). No. of bitstreams: 1 __ac.els-cdn.com_S003811...173c966f474374957ce5c7d2c29f9.pdf: 174774 bytes, checksum: c4ef42314fe2e06c3baed97bc61c0d88 (MD5) Previous issue date: 2011-02 In this work we apply the current-based threshold voltage definition (equality between the drift and diffusion components of drain current) to intrinsic symmetric double-gate MOSFETs. We show that the half maximum point of the gm/ID (transconductance-to-current ratio) curve in the linear region corresponds exactly to the condition IDdrift = IDdiff when mobility variation is neglected. Numerical simulations show that the threshold voltages determined from the gm/ID curve and from the IDdrift = IDdiff condition differ by about /t/2 (one half of the thermal voltage) when considering realistic mobility variations. Simulation results show that the threshold voltages determined with the gm/ID procedure are close to those obtained with the Y (=ID= ffiffiffiffiffiffi gm p ) function method for a considerable range of silicon film thicknesses, channel lengths, and temperature values. The current-based procedure has also been successfully applied experimentally to a FinFET over a wide temperature range.