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Thermoelectric materials convert heat into electricity through thermally driven charge transport in solids, or vice versa for cooling. To be competitive with conventional energy-generation technologies, a thermoelectric material must possess the properties of both an electrical conductor and a thermal insulator. However, these properties are normally mutually exclusive because of the interconnection of the scattering mechanisms for charge carriers and phonons. Recent theoretical investigations on sub-device scales have revealed that silicon membranes covered by nanopillars exhibit a multitude of local phonon resonances, spanning the full spectrum, that couple with the heat-carrying phonons in the membrane and collectively cause a reduction in the in-plane thermal conductivity$-$while, in principle, not affecting the electrical properties because the nanopillars are external to the pathway of voltage generation and charge transport. Here this effect is demonstrated experimentally for the first time by investigating device-scale suspended silicon membranes with GaN nanopillars grown on the surface. The nanopillars cause up to 21 % reduction in the thermal conductivity while the electrical conductivity and the Seebeck coefficient remain unaffected, thus demonstrating an unprecedented decoupling in the semiconductor's thermoelectric properties. The measured thermal conductivity behavior for coalesced nanopillars and corresponding lattice-dynamics calculations provide further evidence that the reductions are mechanistically tied to the phonon resonances. This finding breaks a longstanding trade-off between competing properties in thermoelectricity and paves the way for engineered high-efficiency solid-state energy recovery and cooling.

The rapidly expanding class of quantum materials known as {\emph{topological semimetals}} (TSM) display unique transport properties, including a striking dependence of resistivity on applied magnetic field, that are of great interest for both scientific and technological reasons. However, experimental signatures that can identify or discern the dominant mechanism and connect to available theories are scarce. Here we present the magnetic susceptibility ($\chi$), the tangent of the Hall angle ($\tan\theta_H$) along with magnetoresistance in four different non-magnetic semimetals with high mobilities, NbP, TaP, NbSb$_2$ and TaSb$_2$, all of which exhibit non-saturating large MR. We find that the distinctly different temperature dependences, $\chi(T)$ and the values of $\tan\theta_H$ in phosphides and antimonates serve as empirical criteria to sort the MR from different origins: NbP and TaP being uncompensated semimetals with linear dispersion, in which the non-saturating magnetoresistance arises due to guiding center motion, while NbSb$_2$ and TaSb$_2$ being {\it compensated} semimetals, with a magnetoresistance emerging from nearly perfect charge compensation of two quadratic bands. Our results illustrate how a combination of magnetotransport and susceptibility measurements may be used to categorize the increasingly ubiquitous non-saturating large magnetoresistance in TSMs., Comment: Accepted for publication at Proc. Natl. Acad. Sci., minor revisions, 6 figures

We report three distinct regions within the A-phase in Fe-doped MnSi, based on the evolution of magnetoresistance and the Hall effect as a function of orientation of applied field. Fe impurities as pinning centers and crystalline anisotropy are found non-negligible only at the boundary of the A-phase. Electrical transport characteristics unique to the A-phase not only remain robust, but also indicate a freely rotating skyrmion lattice, decoupled from underlying crystal structure or impurity pinning., Comment: 5 pages, 4 figures, Supplemental Material (2 pages, 3 figures)