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1. A 3-D Bank Memory System for Low-Power Neural Network Processing Achieved by Instant Context Switching and Extended Power Gating Time.

2. Crystalline Oxide Semiconductor-based 3D Bank Memory System for Endpoint Artificial Intelligence with Multiple Neural Networks Facilitating Context Switching and Power Gating

3. 32‐3: 1.5‐inch, 3207‐ppi Side‐by‐Side OLED Display Capable of 32‐Division Driving with OSLSI/SiLSI Structure Fabricated by Photolithography

4. 10‐1: Layout of 1.50‐inch, 3207‐ppi OLED Display with OSLSI/SiLSI Structure Capable of Division Driving Fabricated through VLSI Process with Side‐by‐Side Patterning by Photolithography

6. 46‐2: Invited Paper: A Flexible OLED Display with Robustness and Bendability

8. 56-4: Key Technologies for Assembling Kawara-type Multidisplays

10. 35-3: High Resolution and Low Power Consumption Hybrid Display

11. 24-3: An 8.34-inch 1058-ppi 8K x 4K Flexible OLED Display

12. P-26: A 1058 ppi 8K4K OLED Display using a Top-Gate Self-Aligned CAAC Oxide Semiconductor FET

13. 69-3: 806-ppi 4K2K LC Display using Top-gate Self-aligned CAAC-OS FET

14. P-143: Fabrication of 5.5-inch 4K2K Liquid Crystal panel using High-mobility IGZO Material

15. Ultra‐high‐resolution 1058‐ppi OLED displays with 2.78‐in size using CAAC‐IGZO FETs with tandem OLED device and single OLED device

17. 46‐2: Invited Paper:A Flexible OLED Display with Robustness and Bendability

19. 57.3:Distinguished Paper: New Pixel Circuits for Controlling Threshold Voltage by Back-gate Bias Voltage using Crystalline Oxide Semiconductor FETs

20. Development of a high-resolution RGBW flexible display using a white organic light-emitting diode with microcavity structure and that of a side-roll touch panel

21. 44.3: 513‐ppi Liquid Crystal Display Using C‐Axis Aligned Crystalline Oxide Semiconductor with Narrow Bezel and Aperture Ratio Greater Than 50%

22. 15.3: Development of Side‐Roll and Top‐Roll Panels for an RGBW High‐Resolution Flexible Display Using a White OLED with Microcavity Structure

23. A 513-ppi FFS-mode LCD using technique for changing part of active layer of oxide semiconductor to transparent electrode

25. A 1058 ppi 8K4K OLED Display using a Top-Gate Self-Aligned CAAC Oxide Semiconductor FET.

26. 806-ppi 4K2K LC Display using Top-gate Self-aligned CAAC-OS FET.

27. New pixel circuits for controlling threshold voltage by back-gate bias voltage using crystalline oxide semiconductor FETs.

28. 28.2: Color Sequential LC Display Using High Reliable Oxide Semiconductors with Monochrome Electronic Paper Function

30. 76.1: High Aperture Ratio LCD Display using In‐Ga‐Zn‐Oxide TFTs without Storage Capacitor

31. 57.3: Distinguished Paper: New Pixel Circuits for Controlling Threshold Voltage by Back-gate Bias Voltage using Crystalline Oxide Semiconductor FETs.

32. 13.5-inch quarter high definition white tandem OLED display using crystalline In-Ga-Zn-Oxide technology.

33. Fabrication of 5.5-inch 4K2K Liquid Crystal Panel using High-mobility IGZO Material.

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