33 results on '"Toyotaka, Kouhei"'
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2. Crystalline Oxide Semiconductor-based 3D Bank Memory System for Endpoint Artificial Intelligence with Multiple Neural Networks Facilitating Context Switching and Power Gating
3. 32‐3: 1.5‐inch, 3207‐ppi Side‐by‐Side OLED Display Capable of 32‐Division Driving with OSLSI/SiLSI Structure Fabricated by Photolithography
4. 10‐1: Layout of 1.50‐inch, 3207‐ppi OLED Display with OSLSI/SiLSI Structure Capable of Division Driving Fabricated through VLSI Process with Side‐by‐Side Patterning by Photolithography
5. 37‐1: Liquid Crystal Display Panel with a Pixel Including Oxide Semiconductor Field‐Effect Transistor Memory (Pixel AI)
6. 46‐2: Invited Paper: A Flexible OLED Display with Robustness and Bendability
7. 5-3: OLED Display Device Mounted with a Novel External Compensating Circuit
8. 56-4: Key Technologies for Assembling Kawara-type Multidisplays
9. P-7: A 65-in. 8K LCD and OLED Display Using Cloud-Aligned Composite Oxide-Semiconductor (CAC-OS) FET
10. 35-3: High Resolution and Low Power Consumption Hybrid Display
11. 24-3: An 8.34-inch 1058-ppi 8K x 4K Flexible OLED Display
12. P-26: A 1058 ppi 8K4K OLED Display using a Top-Gate Self-Aligned CAAC Oxide Semiconductor FET
13. 69-3: 806-ppi 4K2K LC Display using Top-gate Self-aligned CAAC-OS FET
14. P-143: Fabrication of 5.5-inch 4K2K Liquid Crystal panel using High-mobility IGZO Material
15. Ultra‐high‐resolution 1058‐ppi OLED displays with 2.78‐in size using CAAC‐IGZO FETs with tandem OLED device and single OLED device
16. New pixel circuits for controlling threshold voltage by back-gate bias voltage using crystalline oxide semiconductor FETs
17. 46‐2: Invited Paper:A Flexible OLED Display with Robustness and Bendability
18. 70.4: A 2.78‐in 1058‐ppi Ultra‐High‐Resolution OLED Display using CAAC‐OS FETs
19. 57.3:Distinguished Paper: New Pixel Circuits for Controlling Threshold Voltage by Back-gate Bias Voltage using Crystalline Oxide Semiconductor FETs
20. Development of a high-resolution RGBW flexible display using a white organic light-emitting diode with microcavity structure and that of a side-roll touch panel
21. 44.3: 513‐ppi Liquid Crystal Display Using C‐Axis Aligned Crystalline Oxide Semiconductor with Narrow Bezel and Aperture Ratio Greater Than 50%
22. 15.3: Development of Side‐Roll and Top‐Roll Panels for an RGBW High‐Resolution Flexible Display Using a White OLED with Microcavity Structure
23. A 513-ppi FFS-mode LCD using technique for changing part of active layer of oxide semiconductor to transparent electrode
24. 62.3: Six-terminal OLED Display Using Low-Temperature Single-Crystal Silicon (LTSS) Technology
25. A 1058 ppi 8K4K OLED Display using a Top-Gate Self-Aligned CAAC Oxide Semiconductor FET.
26. 806-ppi 4K2K LC Display using Top-gate Self-aligned CAAC-OS FET.
27. New pixel circuits for controlling threshold voltage by back-gate bias voltage using crystalline oxide semiconductor FETs.
28. 28.2: Color Sequential LC Display Using High Reliable Oxide Semiconductors with Monochrome Electronic Paper Function
29. 6.0-Inch Extended Graphics Array Reflective Liquid Crystal Display Using Oxide Semiconductor Thin Film Transistors for Electronic Paper Display
30. 76.1: High Aperture Ratio LCD Display using In‐Ga‐Zn‐Oxide TFTs without Storage Capacitor
31. 57.3: Distinguished Paper: New Pixel Circuits for Controlling Threshold Voltage by Back-gate Bias Voltage using Crystalline Oxide Semiconductor FETs.
32. 13.5-inch quarter high definition white tandem OLED display using crystalline In-Ga-Zn-Oxide technology.
33. Fabrication of 5.5-inch 4K2K Liquid Crystal Panel using High-mobility IGZO Material.
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