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3 results on '"TowerJazz"'

1. RADIATION HARD MONOLITHIC CMOS SENSORS WITH SMALL ELECTRODE SIZE FOR THE ATLAS EXPERIMENT IN THE HL-LHC

Author

Dachs, Florian, Asensi Tortajada, Ignacio, Barbero, Marlon, Berdalovic, Ivan, Bhat, Siddharth, Bortoletto, Daniela, Buttar, Craig, Caicedo, Ivan, Cardella, Roberto, Dao, Valerio, Degerli, Yavuz, Dyndal, Mateusz, Flores Sanz de Acedo, Leyre, Freeman, Patrick, Habib, Amr, Hemperek, Tomasz, Hiti, Bojan, Kugathasan, Thanushan, Moustakas, Konstantinos, Munker, Magdalena, Pernegger, Heinz, Piro, Francesco, Riedler, Petra, Schioppa, Enrico Junior, Schwemling, Philippe, Sharma, Abhishek, Argemi, Lluis Simon, Snoeys, Walter, Solans Sanchez, Carlos, Suligoj, Tomislav, Wang, Tianyang, and Wermes, Norbert

Subjects
Materials science, Large Hadron Collider, CMOS, business.industry, Electrode, ATLAS experiment, DMAPS, monolithic, pixel, radiation hard, silicon, HL-LHC, ATLAS, TowerJazz, Optoelectronics, Radiation, business
Abstract

Mini-MALTA is a Monolithic Active Pixel Sensor prototype developed in the TowerJazz 180 nm CMOS imaging process, with a small collection electrode design (3 um), and a small pixel size (36.4 um), on high resistivity substrates and large voltage bias. It targets the outermost layer of the ATLAS ITK Pixel detector for the HL-LHC. This design addresses the pixel in-efficiencies observed in MALTA and TJ- Monopix to meet the radiation hardness requirements. This contribution will present the results from characterisation in particle beam tests that show full efficiency up to 1e15 neq/cm2 and 70 Mrad.

Published
2020
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2. Measurement of the relative response of small-electrode CMOS sensors at Diamond Light Source

Author

Kaloyan Metodiev, Ian Shipsey, H. Wennlöf, I. Berdalovic, Steven Worm, Valerio Dao, R. Cardella, Laura Gonella, Daniel P. Weatherill, Thanushan Kugathasan, Mateusz Dyndal, C. A. Solans Sanchez, Archana Sharma, Craig Buttar, E.J. Schioppa, Heinz Pernegger, W. Snoeys, Maria Mironova, Philip Patrick Allport, P. M. Freeman, Daniela Bortoletto, Daniel Wood, R. Plackett, Petra Riedler, F. Piro, L. Flores Sanz de Acedo, Mironova, M., Metodiev, K., Allport, P., Berdalovic, I., Bortoletto, D., Buttar, C., Cardella, R., Dao, V., Dyndal, M., Freeman, P., Flores Sanz de Acedo, L., Gonella, L., Kugathasan, T., Pernegger, H., Piro, F., Plackett, R., Riedler, P., Sharma, A., Schioppa, E. J., Shipsey, I., Solans Sanchez, C., Snoeys, W., Wennlof, H., Weatherill, D., Wood, D., and Worm, S.

Subjects
Nuclear and High Energy Physics, Photon, Physics::Instrumentation and Detectors, TowerJazz, engineering.material, 01 natural sciences, Radiation-hard detector, Charge sharing, 0103 physical sciences, Irradiation, 010306 general physics, Instrumentation, Physics, Pixel, Monolithic active pixel sensor, 010308 nuclear & particles physics, business.industry, Diamond, Biasing, Monolithic active pixel sensors, CMOS sensors, Radiation-hard detectors, Synchrotron light source, MALTA, CMOS sensor, Electrode, engineering, Optoelectronics, business, Voltage
Abstract

This paper outlines the results of investigations into the effects of radiation damage in the mini-MALTA depleted monolithic pixel sensor prototype. Measurements were carried out at Diamond Light Source using a micro-focus X-ray beam, which scanned across the surface of the device in 2 μ m steps. This allowed the in-pixel photon response to be measured directly with high statistics. Three pixel design variations were considered: one with the standard continuous n − layer layout and front-end, and extra deep p-well and n − gap designs with a modified front-end. Five chips were measured: one unirradiated, one neutron irradiated, and three proton irradiated. The standard design showed a decrease of 12% in pixel response after irradiation to 1e15 n eq ∕ cm 2 . For the two new designs the pixel response did not decrease significantly after irradiation. A decrease of pixel response at high biasing voltages was observed. The charge sharing in the chip was quantified and found to be in agreement with expectations.

Published
2020

3. Measurement of the relative response of small-electrode CMOS sensors at Diamond Light Source.

Author

Mironova, M., Metodiev, K., Allport, P., Berdalovic, I., Bortoletto, D., Buttar, C., Cardella, R., Dao, V., Dyndal, M., Freeman, P., Flores Sanz de Acedo, L., Gonella, L., Kugathasan, T., Pernegger, H., Piro, F., Plackett, R., Riedler, P., Sharma, A., Schioppa, E.J., and Shipsey, I.

Subjects
*RADIATION damage, *DETECTORS, *DIAMONDS, *NANODIAMONDS, *HIGH voltages, *FAST neutrons
Abstract

This paper outlines the results of investigations into the effects of radiation damage in the mini-MALTA depleted monolithic pixel sensor prototype. Measurements were carried out at Diamond Light Source using a micro-focus X-ray beam, which scanned across the surface of the device in 2 μ m steps. This allowed the in-pixel photon response to be measured directly with high statistics. Three pixel design variations were considered: one with the standard continuous n − layer layout and front-end, and extra deep p-well and n − gap designs with a modified front-end. Five chips were measured: one unirradiated, one neutron irradiated, and three proton irradiated. The standard design showed a decrease of 12% in pixel response after irradiation to 1e15 n eq ∕ cm 2 . For the two new designs the pixel response did not decrease significantly after irradiation. A decrease of pixel response at high biasing voltages was observed. The charge sharing in the chip was quantified and found to be in agreement with expectations. [ABSTRACT FROM AUTHOR]

Published
2020
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