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The dynamics of magnetic hysteresis, including the training effect and the field sweep rate dependence of the exchange bias, is experimentally investigated in exchange-coupled potassium split graphene nanoribbons (GNRs). We find that, at low field sweep rate, the pronounced absolute training effect is present over a large number of cycles. This is reflected in a gradual decrease of the exchange bias with the sequential field cycling. However, at high field sweep rate above 0.5 T/min, the training effect is not prominent. With the increase in field sweep rate, the average value of exchange bias field grows and is found to follow power law behavior. The response of the exchange bias field to the field sweep rate variation is linked to the difference in the time it takes to perform a hysteresis loop measurement compared with the relaxation time of the anti-ferromagnetically aligned spins. The present results may broaden our current understanding of magnetism of GNRs and would be helpful in establishing the GNRs based spintronic devices., Comment: Accepted Applied Physics Letters (In press)

Two types of graphene nanoribbons: (a) potassium-split graphene nanoribbons (GNRs), and (b) oxidative unzipped and chemically converted graphene nanoribbons (CCGNRs) were investigated for their magnetic properties using the combination of static magnetization and electron spin resonance measurements. The two types of ribbons possess remarkably different magnetic properties. While the low temperature ferromagnet-like feature is observed in both types of ribbons, such room temperature feature persists only in potassium-split ribbons. The GNRs show negative exchange bias, but the CCGNRs exhibit a 'positive exchange bias'. Electron spin resonance measurements infer that the carbon related defects may responsible for the observed magnetic behaviour in both types of ribbons. Furthermore, proton hyperfine coupling strength has been obtained from hyperfine sublevel correlation experiments performed on the GNRs. Electron spin resonance provides no indications for the presence of potassium (cluster) related signals, emphasizing the intrinsic magnetic nature of the ribbons. Our combined experimental results may infer the coexistence of ferromagnetic clusters with anti-ferromagnetic regions leading to disordered magnetic phase. We discuss the origin of the observed contrast in the magnetic behaviours of these two types of ribbons.

We have observed a nearly fourfold increase in the electron spin resonance (ESR) signal from an ensemble of single-walled carbon nanotubes (SWCNTs) due to oxygen desorption. By performing temperature-dependent ESR spectroscopy both before and after thermal annealing, we found that the ESR in SWCNTs can be reversibly altered via the molecular oxygen content in the samples. Independent of the presence of adsorbed oxygen, a Curie-law (spin susceptibility $\propto 1/T$) is seen from $\sim$4 K to 300 K, indicating that the probed spins are finite-level species. For both the pre-annealed and post-annealed sample conditions, the ESR linewidth decreased as the temperature was increased, a phenomenon we identify as motional narrowing. From the temperature dependence of the linewidth, we extracted an estimate of the intertube hopping frequency; for both sample conditions, we found this hopping frequency to be $\sim$100 GHz. Since the spin hopping frequency changes only slightly when oxygen is desorbed, we conclude that only the spin susceptibility, not spin transport, is affected by the presence of physisorbed molecular oxygen in SWCNT ensembles. Surprisingly, no linewidth change is observed when the amount of oxygen in the SWCNT sample is altered, contrary to other carbonaceous systems and certain 1D conducting polymers. We hypothesize that physisorbed molecular oxygen acts as an acceptor ($p$-type), compensating the donor-like ($n$-type) defects that are responsible for the ESR signal in bulk SWCNTs., Comment: 14 pages, 7 figures

Using ultrahigh magnetic fields up to 170 T and polarized midinfrared radiation with tunable wavelengths from 9.22 to 10.67 um, we studied cyclotron resonance in large-area graphene grown by chemical vapor deposition. Circular-polarization dependent studies reveal strong p-type doping for as-grown graphene, and the dependence of the cyclotron resonance on radiation wavelength allows for a determination of the Fermi energy. Thermal annealing shifts the Fermi energy to near the Dirac point, resulting in the simultaneous appearance of hole and electron cyclotron resonance in the magnetic quantum limit, even though the sample is still p-type, due to graphene's linear dispersion and unique Landau level structure. These high-field studies therefore allow for a clear identification of cyclotron resonance features in large-area, low-mobility graphene samples., Comment: 9 pages, 3 figures

Electron spin resonance (ESR) investigation of graphene nanoribbons (GNRs) prepared through longitudinal unzipping of multiwalled carbon nanotubes (MWCNTs) indicates the presence of C-related dangling bond centers, exhibiting paramagnetic features. ESR signal broadening from pristine or oxidized graphene nanoribbons (OGNRs) is explained in terms of unresolved hyperfine structure, and in the case of reduced GNRs (RGNRs), the broadening of ESR signal can be due to enhancement in conductivity upon reduction. The spin dynamics observed from ESR linewidth-temperature data reflect a variable range hopping (VRH) mechanism through localized states, consistent with resistance-temperature data., Comment: 17 pages, 4 Figures

Scaling laws and universality are often associated with systems exhibiting emergent phenomena possessing a characteristic energy scale. We report nonequilibrium transport measurements on two different types of single-molecule transistor (SMT) devices in the Kondo regime. The conductance at low bias and temperature adheres to a scaling function characterized by two parameters. This result, analogous to that reported recently in semiconductor dots with Kondo temperatures two orders of magnitude lower, demonstrates the universality of this scaling form. We compare the extracted values of the scaling coefficients to previous experimental and theoretical results., Comment: 4.5 pages, 3 figures

Vertical structures of SiO$_{2}$ sandwiched between a top tungsten electrode and conducting non-metal substrate were fabricated by dry and wet etching methods. Both structures exhibit similar voltage-controlled memory behaviors, in which short voltage pulses (1 $\mu$s) can switch the devices between high- and low-impedance states. Through the comparison of current-voltage characteristics in structures made by different methods, filamentary conduction at the etched oxide edges is most consistent with the results, providing insights into similar behaviors in metal/SiO/metal systems. High ON/OFF ratios of over 10$^{4}$ were demonstrated., Comment: 6 pages, 3 figures + 2 suppl. figures

Contact resistances often contribute significantly to the overall device resistance in organic field-effect transistors (OFETs). Understanding charge injection at the metal-organic interface is critical to optimizing OFET device performance. We have performed a series of experiments using bottom-contact poly(3-hexylthiophene) (P3HT) OFETs in the shallow channel limit to examine the injection process. When contacts are ohmic we find that contact resistivity is inversely proportional to carrier mobility, consistent with diffusion-limited injection. However, data from devices with other electrode materials indicate that this simple picture is inadequate to describe contacts with significant barriers. A generalized transmission line method allows the analysis of nonohmic contacts, and we find reasonable agreement with a model for injection that accounts for the hopping nature of conduction in the polymer. Variation of the (unintentional) dopant concentration in the P3HT can significantly alter the injection process via changes in metal-organic band alignment. At very low doping levels, transport suggests the formation of a barrier at the Au/P3HT interface, while Pt/P3HT contacts remain ohmic with comparatively low resistance. We recently observed that self-assembled monolayers on the metal source/drain electrodes can significantly decrease contact resistance and maintain ohmic conduction under conditions that would result in nonohmic, high resistance contacts to untreated electrodes. Finally, we discuss measurements on extremely short channel devices, in the initial steps toward examining transport through individual polymer chains., Comment: 13 pages, 10 figures, SPIE San Diego 2006

We report electronic transport measurements of single-molecule transistor devices incorporating bipyridyl-dinitro oligophenylene-ethynylene dithiol (BPDN-DT), a molecule known to exhibit conductance switching in other measurement configurations. We observe hysteretic conductance switching in 8% of devices with measurable currents, and find that dependence of the switching properties on gate voltage is rare when compared to other single-molecule transistor devices. This suggests that polaron formation is unlikely to be responsible for switching in these devices. We discuss this and alternative switching mechanisms., Comment: 5 pages, 4 figures. Supporting material available upon request

We have studied charge injection across the metal/organic semiconductor interface in bottom-contact poly(3-hexylthiophene) (P3HT) field-effect transistors, with Au source and drain electrodes modified by self-assembled monolayers (SAMs) prior to active polymer deposition. By using the SAM to engineer the effective Au work function, we markedly affect the charge injection process. We systematically examine the contact resistivity and intrinsic channel mobility, and show that chemically increasing the injecting electrode work function significantly improves hole injection relative to untreated Au electrodes., Comment: 5 pages, 2 figures. Supplementary information available upon request

We report Kondo resonances in the conduction of single-molecule transistors based on transition metal coordination complexes. We find Kondo temperatures in excess of 50 K, comparable to those in purely metallic systems. The observed gate dependence of the Kondo temperature is inconsistent with observations in semiconductor quantum dots and a simple single-dot-level model. We discuss possible explanations of this effect, in light of electronic structure calculations., Comment: 5 pages, four figures. Supplementary material at http://www.ruf.rice.edu/~natelson/publications.html

In single-molecule transistors, we observe inelastic cotunneling features that correspond energetically to vibrational excitations of the molecule, as determined by Raman and infrared spectroscopy. This is a form of inelastic electron tunneling spectroscopy of single molecules, with the transistor geometry allowing in-situ tuning of the electronic states via a gate electrode. The vibrational features shift and change shape as the electronic levels are tuned near resonance, indicating significant modification of the vibrational states. When the molecule contains an unpaired electron, we also observe vibrational satellite features around the Kondo resonance., Comment: 5 pages, 4 figures. Supplementary information available upon request