1. Voltage-Controlled ON–OFF Ferromagnetism at Room Temperature in a Single Metal Oxide Film
- Author
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Quintana, Alberto, Menéndez, Enric, Liedke, Maciej O, Butterling, Maik, Wagner, Andreas, Sireus, Veronica, Torruella, Pau, Estradé, Sònia, Peiró, Francesca, Dendooven, Jolien, Detavernier, Christophe, Murray, Peyton D, Gilbert, Dustin Allen, Liu, Kai, Pellicer, Eva, Nogues, Josep, and Sort, Jordi
- Subjects
Engineering ,Physical Sciences ,Materials Engineering ,Nanotechnology ,Condensed Matter Physics ,Affordable and Clean Energy ,voltage control of magnetism ,electrolyte ,ion migration ,magneto-ionics ,on-off ferromagnetism ,on−off ferromagnetism ,Nanoscience & Nanotechnology - Abstract
Electric-field-controlled magnetism can boost energy efficiency in widespread applications. However, technologically, this effect is facing important challenges: mechanical failure in strain-mediated piezoelectric/magnetostrictive devices, dearth of room-temperature multiferroics, or stringent thickness limitations in electrically charged metallic films. Voltage-driven ionic motion (magneto-ionics) circumvents most of these drawbacks while exhibiting interesting magnetoelectric phenomena. Nevertheless, magneto-ionics typically requires heat treatments and multicomponent heterostructures. Here we report on the electrolyte-gated and defect-mediated O and Co transport in a Co3O4 single layer which allows for room-temperature voltage-controlled ON-OFF ferromagnetism (magnetic switch) via internal reduction/oxidation processes. Negative voltages partially reduce Co3O4 to Co (ferromagnetism: ON), resulting in graded films including Co- and O-rich areas. Positive bias oxidizes Co back to Co3O4 (paramagnetism: OFF). This electric-field-induced atomic-scale reconfiguration process is compositionally, structurally, and magnetically reversible and self-sustained, since no oxygen source other than the Co3O4 itself is required. This process could lead to electric-field-controlled device concepts for spintronics.
- Published
- 2018