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Photosensitization of semiconductors by excitation of chiral plasmonic metallic nanostructures has attracted much attention, not only for the analysis and detection of circularly polarized light but also for its potential applications in chiral photosynthesis. Although there have been reports on the detection of semiconductor-sensitized current in chiral nanostructures precisely fabricated by physical vapor deposition and/or lithography techniques, there have been no studies using plasmonic metal nanocolloids synthesized by chemical processes. In this study, we report the establishment of a fabrication method for large-area chiral photoelectrodes and the semiconductor photosensitization phenomenon realized using chiral plasmonic nanoparticles. Chiral plasmonic Au nanoparticles prepared by previously reported colloidal methods were immobilized onto a TiO2 thin film electrode by electrophoresis. When TiO2 electrodes loaded with chiral Au nanoparticles synthesized using L-cysteine were irradiated with circularly polarized light, left circularly polarized light irradiation at a wavelength of 500–600 nm generated a larger anodic photocurrent than right circularly polarized light irradiation at the same wavelength. This trend was reversed for TiO2 electrodes immobilized with colloidal Au nanoparticles synthesized with D-cysteine. From these results, we conclude that the efficiency of photocurrent generation by chiral plasmon excitation can be controlled by the polarization direction of the incident light. [ABSTRACT FROM AUTHOR]

Low‐toxic multinary semiconductor quantum dots (QDs) showing a photoresponse in a wide wavelength range from visible to near‐IR wavelength regions have been intensively investigated for fabricating efficient solar light conversion systems. Recently, AgBiS2 QDs have attracted much attention for their application to improve the performance of QD solar cells because they have a large absorption coefficient in the visible and near‐IR regions. In this report, we describe solution‐phase preparation of ternary Ag−Bi−S QDs with different sizes and with different Ag/Bi ratios. The average size of resulting spherical Ag−Bi−S QDs was controllable from 2.7 to 8.1 nm by adjusting the reaction temperature from 373 to 473 K, while the Ag fraction of obtained QDs also increased with an increase in particle size. The absorption onset wavelength shifted from 850 to 1200 nm in the near‐IR region as the particle size increased. AgBiS2 QDs with an almost stoichiometric composition, obtained at reaction temperatures of 423 K and 473 K, contained no deep intragap states and exhibited a p‐type semiconductor behavior, while QDs prepared at a reaction temperature of 393 K or lower had non‐stoichiometric Ag‐deficient compositions producing intragap defect states. Sensitized solar cells fabricated with stoichiometric AgBiS2 QDs exhibited a photoresponse in visible and near‐IR wavelength regions, the optimal PCE being 0.74% with AgBiS2 QDs of 6.2 nm in diameter that were prepared at 423 K. [ABSTRACT FROM AUTHOR]

Narrowing the emission peak width and adjusting the peak position play a key role in the chromaticity and color accuracy of display devices with the use of quantum dot light-emitting diodes (QD-LEDs). In this study, we developed multinary Cu–In–Ga–S (CIGS) QDs showing a narrow photoluminescence (PL) peak by controlling the Cu fraction, i.e., Cu/(In+Ga), and the ratio of In to Ga composing the QDs. The energy gap of CIGS QDs was enlarged from 1.74 to 2.77 eV with a decrease in the In/(In+Ga) ratio from 1.0 to 0. The PL intensity was remarkably dependent on the Cu fraction, and the PL peak width was dependent on the In/(In+Ga) ratio. The sharpest PL peak at 668 nm with a full width at half maximum (fwhm) of 0.23 eV was obtained for CIGS QDs prepared with ratios of Cu/(In+Ga) = 0.3 and In/(In+Ga) = 0.7, being much narrower than those previously reported with CIGS QDs, fwhm of >0.4 eV. The PL quantum yield of CIGS QDs, 8.3%, was increased to 27% and 46% without a PL peak broadening by surface coating with GaSx and Ga–Zn–S shells, respectively. Considering a large Stokes shift of >0.5 eV and the predominant PL decay component of ∼200–400 ns, the narrow PL peak was assignable to the emission from intragap states. QD-LEDs fabricated with CIGS QDs surface-coated with GaSx shells showed a red color with a narrow emission peak at 688 nm with a fwhm of 0.24 eV. [ABSTRACT FROM AUTHOR]

This study presents a facile synthesis of cadmium-free ternary and quaternary quantum dots (QDs) and their application to light-emitting diode (LED) devices. AgInS2 ternary QDs, developed as a substitute for cadmium chalcogenide QDs, exhibited spectrally broad photoluminescence due to intrinsic defect levels. Our group has successfully achieved narrow band-edge PL by a coating with gallium sulfide shell. Subsequently, an intrinsic difficulty in the synthesis of multinary compound QDs, which often results in unnecessary byproducts, was surmounted by a new approach involving the nucleation of silver sulfide followed by material conversion to the intended composition (silver indium gallium sulfide). By fine-tuning this reaction and bringing the starting material closer to stoichiometric compositional ratios, atom economy was further improved. These QDs have been tested in LED applications, but the standard device encountered a significant defective emission that would have been eliminated by the gallium sulfide shells. This problem is addressed by introducing gallium oxide as a new electron transport layer. [ABSTRACT FROM AUTHOR]

We prepared a solid-state Z-scheme photocatalyst in which zinc rhodium oxide (ZnRh2O4) and bismuth vanadium oxide (Bi4V2O11) that served as hydrogen (H2) and oxygen (O2) evolution photocatalysts, respectively, were connected with gold (Au) nanoparticles. The Au nanoparticles were prepared by sputtering in an ionic liquid, N-methyl-N-propylpiperidinium bis(trifluoromethanesulfonyl)imide, to generate Au/ZnRh2O4/Au/Bi4V2O11 with various amounts of Au in the 12 mol. %–29 mol. % range (vs 1.0 mol ZnRh2O4 + 0.2 mol Bi4V2O11). Au/ZnRh2O4/Au/Bi4V2O11 photocatalyzed overall pure-water splitting under irradiation with red light at a wavelength of 700 nm, and the dependence of the amounts of Au on the apparent quantum efficiency tended to increase in the measurement range. [ABSTRACT FROM AUTHOR]