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Your search keyword '"Top and bottom free layer"' showing total 2 results
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2 results on '"Top and bottom free layer"'

1. Tunneling-Magnetoresistance Ratio Comparison of MgO-Based Perpendicular-Magnetic-Tunneling-Junction Spin Valve Between Top and Bottom CoFeB Free Layer Structure.

Author

Lee, Du-Yeong, Lee, Seung-Eun, Shim, Tae-Hun, and Park, Jea-Gun

Subjects
TUNNEL magnetoresistance, SPIN valves, BUFFER layers, ATOMS, ANNEALING of metals
Abstract

For the perpendicular-magnetic-tunneling-junction (p-MTJ) spin valve with a nanoscale-thick bottom CoFeB free layer ex situ annealed at 400 °C, which has been used as a common p-MTJ structure, the Pt atoms of the Pt buffer layer diffused into the MgO tunneling barrier. This transformed the MgO tunneling barrier from a body-centered cubic (b.c.c) crystallized layer into a mixture of b.c.c, face-centered cubic, and amorphous layers and rapidly decreased the tunneling-magnetoresistance (TMR) ratio. The p-MTJ spin valve with a nanoscale-thick top CoFeB free layer could prevent the Pt atoms diffusing into the MgO tunneling barrier during ex situ annealing at 400 °C because of non-necessity of a Pt buffer layer, demonstrating the TMR ratio of ~143 %. [ABSTRACT FROM AUTHOR]

Published
2016
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2. Tunneling-Magnetoresistance Ratio Comparison of MgO-Based Perpendicular-Magnetic-Tunneling-Junction Spin Valve Between Top and Bottom Co2Fe6B2 Free Layer Structure

Author

Tae Hun Shim, Du Yeong Lee, Seung-Eun Lee, and Jea-Gun Park

Subjects
010302 applied physics, Materials science, Nano Express, Condensed matter physics, Magnetoresistance, Annealing (metallurgy), Spin valve, Nanochemistry, Nanotechnology, 02 engineering and technology, TMR ratio, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Top and bottom free layer, Amorphous solid, p-MTJ, Materials Science(all), 0103 physical sciences, Perpendicular, BEOL, General Materials Science, 0210 nano-technology, Pt diffusion, Quantum tunnelling
Abstract

For the perpendicular-magnetic-tunneling-junction (p-MTJ) spin valve with a nanoscale-thick bottom Co2Fe6B2 free layer ex situ annealed at 400 °C, which has been used as a common p-MTJ structure, the Pt atoms of the Pt buffer layer diffused into the MgO tunneling barrier. This transformed the MgO tunneling barrier from a body-centered cubic (b.c.c) crystallized layer into a mixture of b.c.c, face-centered cubic, and amorphous layers and rapidly decreased the tunneling-magnetoresistance (TMR) ratio. The p-MTJ spin valve with a nanoscale-thick top Co2Fe6B2 free layer could prevent the Pt atoms diffusing into the MgO tunneling barrier during ex situ annealing at 400 °C because of non-necessity of a Pt buffer layer, demonstrating the TMR ratio of ~143 %. Electronic supplementary material The online version of this article (doi:10.1186/s11671-016-1637-9) contains supplementary material, which is available to authorized users.

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