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1. 3-D Full-Band Monte Carlo Simulation of Hot-Electron Energy Distributions in Gate-All-Around Si Nanowire MOSFETs

3. Sensitive-Volume Model of Single-Event Latchup for a 180-nm SRAM Test Structure

4. DFF Layout Variations in CMOS SOI—Analysis of Hardening by Design Options

5. Pulsed Laser-Induced Single-Event Transients in InGaAs FinFETs with sub-10-nm Fin Widths

6. Using MRED to Screen Multiple-Node Charge-Collection Mitigated SOI Layouts

10. Solvent-Assisted Self-Assembly of CsPbBr3Perovskite Nanocrystals into One-Dimensional Superlattice

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