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22 results on '"Tong, Jingnan"'

5. Bulk Incorporation with 4‐Methylphenethylammonium Chloride for Efficient and Stable Methylammonium‐Free Perovskite and Perovskite‐Silicon Tandem Solar Cells

Author

Duong, The, primary, Nguyen, Thuan, additional, Huang, Keqing, additional, Pham, Huyen, additional, Adhikari, Sunita Gautam, additional, Khan, Motiur Rahman, additional, Duan, Leiping, additional, Liang, Wensheng, additional, Fong, Kean Chern, additional, Shen, Heping, additional, Bui, Anh Dinh, additional, Mayon, Azul Osorio, additional, Truong, Thien, additional, Tabi, Grace, additional, Ahmad, Viqar, additional, Surve, Sachin, additional, Tong, Jingnan, additional, Kho, Teng, additional, Tran‐Phu, Thanh, additional, Lu, Teng, additional, Zheng, Jianghui, additional, Paetzold, Ulrich W., additional, Lemmer, Uli, additional, Baillie, Anita Ho, additional, Liu, Yun, additional, Andersson, Gunther, additional, White, Thomas, additional, Weber, Klaus, additional, and Catchpole, Kylie, additional

Published
2023
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7. Effect of Al Electrodes on Surface Passivation of TiOx Selective Heterocontacts for Si Solar Cells

Author

Liang, Wensheng, primary, Narangari, Parvathala, additional, Tong, Jingnan, additional, Michel, Jesus Ibarra, additional, Murdoch, Billy J., additional, Sio, Hang Cheong, additional, Kho, Teng, additional, Kremer, Felipe, additional, Armand, Stephane, additional, McIntosh, Keith, additional, Bullock, James, additional, and Fong, Kean Chern, additional

Published
2022
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9. Effect of Al Electrodes on Surface Passivation of TiOx Selective Heterocontacts for Si Solar Cells.

Author

Liang, Wensheng, Narangari, Parvathala, Tong, Jingnan, Michel, Jesus Ibarra, Murdoch, Billy J., Sio, Hang Cheong, Kho, Teng, Kremer, Felipe, Armand, Stephane, McIntosh, Keith, Bullock, James, and Fong, Kean Chern

Subjects
SURFACE passivation, PHOTOVOLTAIC power systems, SOLAR cells, ELECTRODES, PASSIVATION, OHMIC contacts
Abstract

This article presents a comprehensive study regarding the impact of the Al electrode on the surface passivation of three TiOx‐based passivating selective contacts: TiOx:Al/LiFx/Al,TiOx/LiFx/Al, and a‐Si/TiOx:Al/LiFx/Al. A deterioration in passivation is recorded after the deposition of the Al electrode at close to room temperature, where the deterioration correlated to the Al thickness. A thin Al (10 nm) electrode resulted in the most severe passivation decline, while samples with a 100 nm Al electrode showed much less passivation deterioration. Furthermore, it is found that a low‐temperature annealing step led to a partial recovery of the passivation, particularly in the case of TiOx:Al/LiFx/Al and a‐Si/TiOx:Al/LiFx/Al contacts. The presented discovery in this article provides crucial insight into the importance of characterization and evaluation of passivating contacts, which is demonstrated here to be highly sensitive to the deposited metal thickness and the interfacial layers, as well as to the post‐deposition annealing. [ABSTRACT FROM AUTHOR]

Published
2023
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10. Impact of Pregrown SiOx on the Carrier Selectivity and Thermal Stability of Molybdenum-Oxide-Passivated Contact for Si Solar Cells

Author

Tong, Jingnan, primary, Le, Tien T., additional, Liang, Wensheng, additional, Hossain, Md. Anower, additional, McIntosh, Keith R., additional, Narangari, Parvathala, additional, Armand, Stephane, additional, Kho, Teng C., additional, Khoo, Kean T., additional, Zakaria, Yahya, additional, Abdallah, Amir A., additional, Surve, Sachin, additional, Ernst, Marco, additional, Hoex, Bram, additional, and Fong, Kean Chern, additional

Published
2021
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12. Impact of Al Doping on Surface Passivation of TiOx on Si

Author

Liang, Wensheng, primary, Tong, Jingnan, additional, Narangari, Parvathala, additional, Armand, Stephane, additional, Kho, Teng Choon, additional, Ernst, Marco, additional, Walter, Daniel, additional, Surve, Sachin R., additional, McIntosh, Keith Reid, additional, Stocks, Matthew, additional, Weber, Klaus J., additional, Blakers, Andrew, additional, and Fong, Kean Chern, additional

Published
2020
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14. Surface and contact passivation for silicon solar cells: exploring new approaches

Author

Tong, Jingnan

Subjects
Surface passivation, Silicon solar cell, Metal oxide, PECVD, Field-induced anodisation, Passivated contact, Tunnel oxide
Abstract

This thesis explored new approaches for engineering surface and contact passivation layers for silicon solar cells. Of particular interest, was the development and characterisation of new room temperature and solution-processed approaches for the deposition of passivating and carrier-selective contacting layers on crystalline silicon (c-Si) solar cells. The availability of lower-cost processes for forming these layers which are compatible with large-scale manufacturing may enable more rapid uptake of new cell designs employing passivated contacts. An initial re-assessment of the current dielectric deposition techniques revealed an important experimental artefact arising from a commonly-used plasma reactor. The artefact was shown to impact the optical (~1.3% relative loss in photocurrent) and improve the electrical [up to ~16 cm/s reduction in surface recombination velocity (Seff_UL)] properties of the deposited dielectric layer. These differences in film quality can complicate the transfer of technology from laboratory to factory and motivated the development of alternative room temperature, solution processed methods for the growth of surface and contact passivating layers. Ultra-thin tunnelling SiOx layers, formed by the new process of field-induced anodisation (FIA), which intrinsically ensures uniform oxide growth, were demonstrated to have positive charge densities of ~1.5×10^12 cm^-2 and Seff_UL of ~3.5 cm/s on n-type silicon when capped with SiNx and after a forming gas anneal. This surface passivation exceeds that demonstrated with chemically-grown SiOx under the same conditions. The improvement was attributed to the lower fraction of silicon-rich sub-oxides detected in the FIA SiOx compared to chemical SiOx, which resulted in a wider distribution of interface defect states and a smaller minority carrier capture cross section. The formation of hole-selective contact layers through spin-coating hydrogen metal bronze solutions on c-Si was also demonstrated. The solution-processed MoOx layers had similar interfacial properties to thermally-evaporated MoOx layers, evidenced by their comparable contact resistivity (~43 mΩ cm^2) and Seff_UL (~ 190 cm/s) on p-type silicon surfaces. Provided the uniformity of the spin-coated films on hydrophobic silicon surfaces can be addressed, this approach offers the potential to be used in large-scale manufacturing as it has advantages in terms of room temperature processing, simplicity in formation and reduced cost.

Published
2018
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15. Surface and contact passivation for silicon solar cells: exploring new approaches

Author

Lennon, Alison, Photovoltaics & Renewable Energy Engineering, Faculty of Engineering, UNSW, Hoex, Bram, Photovoltaics & Renewable Energy Engineering, Faculty of Engineering, UNSW, Ouyang, Zi, Photovoltaics & Renewable Energy Engineering, Faculty of Engineering, UNSW, Tong, Jingnan, Photovoltaics & Renewable Energy Engineering, Faculty of Engineering, UNSW, Lennon, Alison, Photovoltaics & Renewable Energy Engineering, Faculty of Engineering, UNSW, Hoex, Bram, Photovoltaics & Renewable Energy Engineering, Faculty of Engineering, UNSW, Ouyang, Zi, Photovoltaics & Renewable Energy Engineering, Faculty of Engineering, UNSW, and Tong, Jingnan, Photovoltaics & Renewable Energy Engineering, Faculty of Engineering, UNSW

Abstract

This thesis explored new approaches for engineering surface and contact passivation layers for silicon solar cells. Of particular interest, was the development and characterisation of new room temperature and solution-processed approaches for the deposition of passivating and carrier-selective contacting layers on crystalline silicon (c-Si) solar cells. The availability of lower-cost processes for forming these layers which are compatible with large-scale manufacturing may enable more rapid uptake of new cell designs employing passivated contacts. An initial re-assessment of the current dielectric deposition techniques revealed an important experimental artefact arising from a commonly-used plasma reactor. The artefact was shown to impact the optical (~1.3% relative loss in photocurrent) and improve the electrical [up to ~16 cm/s reduction in surface recombination velocity (Seff_UL)] properties of the deposited dielectric layer. These differences in film quality can complicate the transfer of technology from laboratory to factory and motivated the development of alternative room temperature, solution processed methods for the growth of surface and contact passivating layers.Ultra-thin tunnelling SiOx layers, formed by the new process of field-induced anodisation (FIA), which intrinsically ensures uniform oxide growth, were demonstrated to have positive charge densities of ~1.5×10^12 cm^-2 and Seff_UL of ~3.5 cm/s on n-type silicon when capped with SiNx and after a forming gas anneal. This surface passivation exceeds that demonstrated with chemically-grown SiOx under the same conditions. The improvement was attributed to the lower fraction of silicon-rich sub-oxides detected in the FIA SiOx compared to chemical SiOx, which resulted in a wider distribution of interface defect states and a smaller minority carrier capture cross section. The formation of hole-selective contact layers through spin-coating hydrogen metal bronze solutions on c-Si was also demonstrated. The

Published
2018

16. Impact of Pregrown SiOxon the Carrier Selectivity and Thermal Stability of Molybdenum-Oxide-Passivated Contact for Si Solar Cells

Author

Tong, Jingnan, Le, Tien T., Liang, Wensheng, Hossain, Md. Anower, McIntosh, Keith R., Narangari, Parvathala, Armand, Stephane, Kho, Teng C., Khoo, Kean T., Zakaria, Yahya, Abdallah, Amir A., Surve, Sachin, Ernst, Marco, Hoex, Bram, and Fong, Kean Chern

Abstract

Thin SiOxinterlayers are often formed naturally during the deposition of transition metal oxides on silicon surfaces due to interfacial reaction. The SiOxlayer, often only several atomic layers thick, becomes the interface between the Si and deposited metal oxide and can therefore influence the electrical properties and thermal stability of the deposited stack. This work explores the potential benefits of controlling the properties of the SiOxinterlayer by the introduction of pregrown high-quality SiOxwhich also inhibits the formation of low-quality SiOxfrom the metal-oxide deposition process. This work demonstrates that a high-quality pregrown SiOxcan reduce the interfacial reaction and results in a more stoichiometric MoOxwith improved surface passivation and thermal stability linked to its lower Dit. Detailed experimental data on carrier selectivity, carrier transport efficiency, annealing stability up to 250 °C, and in-depth material analysis are presented.

Published
2021
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20. Impact of Al Doping on Surface Passivation of TiOx on Si

Author

Liang, Wensheng, Tong, Jingnan, Narangari, Parvathala, Armand, Stephane, Kho, Teng Choon, Ernst, Marco, Walter, Daniel, Surve, Sachin R., McIntosh, Keith Reid, Stocks, Matthew, Weber, Klaus J., Blakers, Andrew, and Fong, Kean Chern

Abstract

Titania (TiOx) is re-emerging to be a passivating material for the surfaces of high-efficiency crystalline silicon solar cells. Numerous sources in the literature suggest that the surface passivation and thermal stability of TiOx deteriorates with increasing film thickness when the TiOx film is thicker than a sufficient thickness. To circumvent this limitation, this study presents a novel process of Al-doped TiOx (TiOx:Al) film, which demonstrates the potential for improved thermal stability and surface passivation. Based on grazing incident X-ray diffraction and UV-Raman measurements, the incorporation of Al impurity in TiOx effectively restrains the crystal phase transformation of the amorphous TiOx layer during deposition. Furthermore, the TiOx:Al films provide better thermal robustness up to 350 °C, which makes it highly compatible with Si solar cell fabrication processes.

Published
2020
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22. Impact of Pregrown SiO x on the Carrier Selectivity and Thermal Stability of Molybdenum-Oxide-Passivated Contact for Si Solar Cells.

Author

Tong J, Le TT, Liang W, Hossain MA, McIntosh KR, Narangari P, Armand S, Kho TC, Khoo KT, Zakaria Y, Abdallah AA, Surve S, Ernst M, Hoex B, and Fong KC

Abstract

Thin SiO x interlayers are often formed naturally during the deposition of transition metal oxides on silicon surfaces due to interfacial reaction. The SiO x layer, often only several atomic layers thick, becomes the interface between the Si and deposited metal oxide and can therefore influence the electrical properties and thermal stability of the deposited stack. This work explores the potential benefits of controlling the properties of the SiO x interlayer by the introduction of pregrown high-quality SiO x which also inhibits the formation of low-quality SiO x from the metal-oxide deposition process. This work demonstrates that a high-quality pregrown SiO x can reduce the interfacial reaction and results in a more stoichiometric MoO x with improved surface passivation and thermal stability linked to its lower D it . Detailed experimental data on carrier selectivity, carrier transport efficiency, annealing stability up to 250 °C, and in-depth material analysis are presented.

Published
2021
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