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Chirality is probably the most mysterious among all symmetry transformations. Very readily broken in biological systems, it is practically absent in naturally occurring inorganic materials and is very challenging to create artificially. Chiral optical wavefronts are often used for the identification, control and discrimination of left- and right-handed biological and other molecules. Thus, it is crucially important to create materials capable of chiral interaction with light, which would allow one to assign arbitrary chiral properties to a light field. In this paper, we utilized van der Waals technology to assemble helical homostructures with chiral properties (e. g. circular dichroism). Because of the large range of van der Waals materials available such helical homostructures can be assigned with very flexible optical properties. We demonstrate our approach by creating helical homostructures based on multilayer As$_2$S$_3$, which offers the most pronounced chiral properties even in thin structures due to its strong biaxial optically anisotropy. Our work showcases that the chirality of an electromagnetic system may emerge at an intermediate level between the molecular and the mesoscopic one due to the tailored arrangement of non-chiral layers of van der Waals crystals and without additional patterning.

The emergence of van der Waals (vdW) materials resulted in the discovery of their giant optical, mechanical, and electronic anisotropic properties, immediately enabling countless novel phenomena and applications. Such success inspired an intensive search for the highest possible anisotropic properties among vdW materials. Furthermore, the identification of the most promising among the huge family of vdW materials is a challenging quest requiring innovative approaches. Here, we suggest an easy-to-use method for such a survey based on the crystallographic geometrical perspective of vdW materials followed by their optical characterization. Using our approach, we found As2S3 as a highly anisotropic vdW material. It demonstrates rare giant in-plane optical anisotropy, high refractive index and transparency in the visible range, overcoming the century-long record set by rutile. Given these benefits, As2S3 opens a pathway towards next-generation nanophotonics as demonstrated by an ultrathin true zero-order quarter-waveplate that combines classical and the Fabry-Perot optical phase accumulations. Hence, our approach provides an effective and easy-to-use method to find vdW materials with the utmost anisotropic properties., Comment: 11 pages, 5 figures

A global trend to miniaturization and multiwavelength performance of nanophotonic devices drives research on novel phenomena, such as bound states in the continuum and Mietronics, as well as the survey for high-refractive index and strongly anisotropic materials and metasurfaces. Hexagonal boron nitride (hBN) is one of promising materials for the future nanophotonics owing to its inherent anisotropy and prospects of high-quality monocrystals growth with atomically flat surface. Here, we present highly accurate optical constants of hBN in the broad wavelength range of 250-1700 nm combining the imaging ellipsometry measurements scanning near-field optical microscopy and first-principle quantum mechanical computations. hBN's high refractive index, up to 2.75 in ultraviolet (UV) and visible range, broadband birefringence of 0.7, and negligible optical losses make it an outstanding material for UV and visible range photonics. Based on our measurement results, we propose and design novel optical elements: handedness-preserving mirrors and subwavelength waveguides with dimensions of 40 nm operating in the visible and UV range, respectively. Remarkably, our results offer unique opportunity to bridge the size-gap between photonics and electronics., Comment: 12 pages, 4 figures

The growing families of two-dimensional crystals derived from naturally occurring van der Waals materials offer an unprecedented platform to investigate elusive physical phenomena and could be of use in a diverse range of devices. Of particular interest are recently reported atomic sheets of non-van der Waals materials, which could allow a better comprehension of the nature of structural bonds and increase the functionality of prospective heterostructures. Here, we study the optostructural properties of ultrathin non-van der Waals InGaS3 sheets produced by standard mechanical cleavage. Our ab initio calculation results suggest an emergence of authentically delicate out-of-plane covalent bonds within its unit cell, and, as a consequence, an artificial generation of layered structure within the material. Those yield to singular layer isolation energies of around 50 meVA-2, which is comparable with the conventional van der Waals material's monolayer isolation energies of 20 - 60 meVA-2. In addition, we provide a comprehensive analysis of the structural, vibrational, and optical properties of the materials presenting that it is a wide bandgap (2.73 eV) semiconductor with a high-refractive index (higher than 2.5) and negligible losses in the visible and infrared spectral ranges. It makes it a perfect candidate for further establishment of visible-range all-dielectric nanophotonics.