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Abstract: a-Axis-oriented undoped n-BaSi2 epitaxial films were grown on Si(111) substrates by molecular beam epitaxy, and the crystalline quality and grain boundaries were investigated by means of reflection high-energy electron diffraction, X-ray diffraction, and transmission electron microscopy (TEM). The grain size of the BaSi2 films was estimated to be approximately 0.1–0.3μm, and straight grain boundaries (GBs) were observed in the plan-view TEM images. Dark-field TEM images under a two-beam diffraction condition showed that these GBs consist mostly of BaSi2 {011} planes. The diffusion length of minority carriers in n-BaSi2 was found to be approximately 10μm by an electron-beam-induced current technique. [Copyright &y& Elsevier]

Abstract: An attempt was made to grow BaSi2 epitaxial films on Si(001) substrates using molecular beam epitaxy. The structure and morphology of the films were investigated using reflection high-energy electron diffraction, X-ray diffraction, electron backscatter diffraction, atomic force microscopy, and transmission electron microscopy. The BaSi2 film grown was a-axis oriented, despite a large lattice mismatch. The measurements indicated that there are two possible epitaxial relationships of BaSi2(100)//Si(001) with BaSi2[010]//Si[110] and BaSi2[001]//Si[110], due to the fourfold symmetry of Si(001). X-ray reciprocal space mapping revealed that the BaSi2 film was almost strain-free. Plan-view transmission electron microscopy clarified the grain size and the existence of grain boundaries in the BaSi2 film. [Copyright &y& Elsevier]

Abstract: We have successfully grown 360-nm-thick undoped n-BaSi2 epitaxial layers on the n+-BaSi2/p+-Si(111) tunnel junction, by molecular beam epitaxy. The external quantum efficiency reached approximately 17.8% at 500nm under a reverse bias voltage of 4V at room temperature, the highest value ever reported for semiconducting silicides. The quantum efficiency was compared to 240-nm-thick undoped n-BaSi2 epitaxial layers on a p-Si(111) substrate. [Copyright &y& Elsevier]

Abstract: We have successfully grown a-axis-oriented p-type BaSi2 films on Si(111) by in situ boron (B) doping using molecular beam epitaxy (MBE). The hole concentration in B-doped BaSi2 was controlled in the range between 1017 and 1019 cm−3 at room temperature by changing the temperature of the B Knudsen cell crucible. The acceptor level was estimated to be approximately 23meV. [Copyright &y& Elsevier]