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The study of the laws of nature has traditionally been pursued in the limit of isolated systems, where energy is conserved. This is not always a valid approximation, however, as the inclusion of features such as gain and loss, or periodic driving, qualitatively amends these laws. A contemporary frontier of metamaterial research is the challenge open systems pose to the characterization of topological matter1,2. Here, one of the most relied upon principles is the bulk–boundary correspondence (BBC), which intimately relates the surface states to the topological classification of the bulk3,4. The presence of gain and loss, in combination with the violation of reciprocity, has been predicted to affect this principle dramatically5,6. Here, we report the experimental observation of BBC violation in a non-reciprocal topolectric circuit7, which is also referred to as the non-Hermitian skin effect. The circuit admittance spectrum exhibits an unprecedented sensitivity to the presence of a boundary, displaying an extensive admittance mode localization despite a translationally invariant bulk. Intriguingly, we measure a non-local voltage response due to broken BBC. Depending on the a.c. current feed frequency, the voltage signal accumulates at the left or right boundary, and increases as a function of nodal distance to the current feed. Boundary-localized bulk eigenstates given by the non-Hermitian skin effect are observed in a non-reciprocal topological circuit. A fundamental revision of the bulk–boundary correspondence in an open system is required to understand the underlying physics.

We observe a localized cnoidal (LCn) state in an electric circuit network. Its formation derives from the interplay of non-linearity and the topology inherent to a Su-Schrieffer-Heeger (SSH) chain of inductors. Varicap diodes act as voltage-dependent capacitors, and create a non-linear on-site potential. For a sinusoidal voltage excitation around midgap frequency, we show that the voltage response in the non-linear SSH circuit follows the Korteweg-de Vries equation. The topological SSH boundary state which relates to a midgap impedance peak in the linearized limit is distorted into the LCn state in the non-linear regime, where the cnoidal eccentricity decreases from edge to bulk.

We employ electric circuit networks to study topological states of matter in non-Hermitian systems enriched by parity-time symmetry PT and chiral symmetry anti-PT (APT). The topological structure manifests itself in the complex admittance bands which yields excellent measurability and signal to noise ratio. We analyze the impact of PT-symmetric gain and loss on localized edge and defect states in a non-Hermitian Su-Schrieffer-Heeger (SSH) circuit. We realize all three symmetry phases of the system, including the APT-symmetric regime that occurs at large gain and loss. We measure the admittance spectrum and eigenstates for arbitrary boundary conditions, which allows us to resolve not only topological edge states, but also a novel PT-symmetric Z_{2} invariant of the bulk. We discover the distinct properties of topological edge states and defect states in the phase diagram. In the regime that is not PT symmetric, the topological defect state disappears and only reemerges when APT symmetry is reached, while the topological edge states always prevail and only experience a shift in eigenvalue. Our findings unveil a future route for topological defect engineering and tuning in non-Hermitian systems of arbitrary dimension.

We employ electric circuit networks to study topological states of matter in non-Hermitian systems enriched by parity-time symmetry PT and chiral symmetry anti-PT (APT). The topological structure manifests itself in the complex admittance bands which yields excellent measurability and signal to noise ratio. We analyze the impact of PT-symmetric gain and loss on localized edge and defect states in a non-Hermitian Su-Schrieffer-Heeger (SSH) circuit. We realize all three symmetry phases of the system, including the APT-symmetric regime that occurs at large gain and loss. We measure the admittance spectrum and eigenstates for arbitrary boundary conditions, which allows us to resolve not only topological edge states, but also a novel PT-symmetric Z_{2} invariant of the bulk. We discover the distinct properties of topological edge states and defect states in the phase diagram. In the regime that is not PT symmetric, the topological defect state disappears and only reemerges when APT symmetry is reached, while the topological edge states always prevail and only experience a shift in eigenvalue. Our findings unveil a future route for topological defect engineering and tuning in non-Hermitian systems of arbitrary dimension.

Nitrogen-vacancy ($\mathrm{N}$-$V$) centers in diamond are among the best-studied quantum-based sensors for a wide range of applications. Here, we demonstrate an optical polarization-based method for full vector magnetometry using ensembles of $\mathrm{N}$-$V$ centers. The anisotropy of the electric dipole moments of the $\mathrm{N}$-$V$ centers enables the assignment of the different magnetic field split transitions in the optically detected magnetic resonance spectra by appropriately setting the optical polarization in the excitation and/or detection of the $\mathrm{N}$-$V$ photoluminescence signal. By further employing the optical-selection rules for the driving microwave field, we show how the full vector of the investigated magnetic field can be restored without the need to apply external bias fields. We discuss different $\mathrm{N}$-$V$-center orientation implementations and limitations toward common approximations used in the $\mathrm{N}$-$V$ magnetometry literature for our approach.

We report the observation of tens of minor lines of the combinational spin-flip Raman scattering in a CdTe:Mn quantum well by means of the high-resolution optical spectroscopy. Classification of this manifold leads to four characteristic values of energy, that correspond to four different types of pair clusters of Mn ions: the nearest, second, third, etc., neighbors. All the four energies show up in a single experiment with a very high precision, providing experimental grounds for a deeper understanding of the $d\ensuremath{-}d$ exchange interactions in a diluted magnetic semiconductor and demonstrating the capacity of the employed method. The major (nearest-neighbor) exchange constant ${J}_{1}=6.15\ifmmode\pm\else\textpm\fi{}0.05$ K was found to consent with its previously reported value. Other detected characteristic energies are as follows ($\ifmmode\pm\else\textpm\fi{}0.05$ K): ${J}_{(2)}=1.80$ K, ${J}_{(3)}=1.39$ K, ${J}_{(4)}=0.81$ K.

Optically induced spin transfer (OISTR) is a pathway to control magnetization dynamics in complex materials on femto- to attosecond timescales. The direct interaction of the laser field with the material creates transient nonequilibrium states, which can exhibit an efficient spin transfer between different magnetic subsystems. How far this spin manipulation via OISTR is a general phenomenon or restricted to a subset of materials with specific properties is an open experimental and theoretical question. Using time-resolved magneto-optical Kerr measurements and time-dependent density functional theory we investigate OISTR in Heusler compounds. We show that the half-Heusler materials NiMnSb and CoMnSb exhibit strong signatures of OISTR, whereas this is less pronounced in the full-Heusler compounds Co2MnSi, Co2FeSi, and Co2FeAl in agreement with ab initio calculations. Our work opens up a systematic path for coherent manipulation of spin dynamics by direct light-matter interaction.

Detection of developmental phenotypes in zebrafish embryos typically involves a visual assessment and scoring of morphological features by an individual researcher. Subjective scoring could impact results and be of particular concern when phenotypic effect patterns are also used as a diagnostic tool to classify compounds. Here we introduce a quantitative morphometric approach based on image analysis of zebrafish embryos. A software called FishInspector was developed to detect morphological features from images collected using an automated system to position zebrafish embryos. The analysis was verified and compared with visual assessments of 3 participating laboratories using 3 known developmental toxicants (methotrexate, dexamethasone, and topiramate) and 2 negative compounds (loratadine and glibenclamide). The quantitative approach exhibited higher sensitivity and made it possible to compare patterns of effects with the potential to establish a grouping and classification of developmental toxicants. Our approach improves the robustness of phenotype scoring and reliability of assay performance and, hence, is anticipated to improve the predictivity of developmental toxicity screening using the zebrafish embryo.

A system is non-Hermitian when it exchanges energy with its environment and non-reciprocal when it behaves differently upon the interchange of input and response. Within the field of metamaterial research on synthetic topological matter, the skin effect describes the conspiracy of non-Hermiticity and non-reciprocity to yield extensive anomalous localization of all eigenmodes in a (quasi) one-dimensional geometry. Here, we introduce the reciprocal skin effect, which occurs in non-Hermitian but reciprocal systems in two or more dimensions: Eigenmodes with opposite longitudinal momentum exhibit opposite transverse anomalous localization. We experimentally demonstrate the reciprocal skin effect in a passive RLC circuit, suggesting convenient alternative implementations in optical, acoustic, mechanical, and related platforms. Skin mode localization brings forth potential applications in directional and polarization detectors for electromagnetic waves., 12 pages, 5 figures, accepted manuscript

The transfer of topological concepts from the quantum world to classical mechanical and electronic systems has opened fundamentally new approaches to protected information transmission and wave guidance. A particularly promising technology are recently discovered topolectrical circuits that achieve robust electric signal transduction by mimicking edge currents in quantum Hall systems. In parallel, modern active matter research has shown how autonomous units driven by internal energy reservoirs can spontaneously self-organize into collective coherent dynamics. Here, we unify key ideas from these two previously disparate fields to develop design principles for active topolectrical circuits (ATCs) that can self-excite topologically protected global signal patterns. Realizing autonomous active units through nonlinear Chua diode circuits, we theoretically predict and experimentally confirm the emergence of self-organized protected edge oscillations in one- and two-dimensional ATCs. The close agreement between theory, simulations and experiments implies that nonlinear ATCs provide a robust and versatile platform for developing high-dimensional autonomous electrical circuits with topologically protected functionalities., Comment: 10 pages, 4 figures, includes supplementary material. This version adds 2D experiments

We present an alternative fabrication process for single crystal diamond cantilevers that consist of a platform carrying a nanopillar containing nitrogen vacancy centers close to its surface. These cantilevers are suitable for vector magnetometry by fitting them to the scanning unit of an atomic force microscope. Our methods extend existing technology to lower electron voltages (30kV) and standard reactive ion etching. Special procedures are presented to overcome both restrictions due to charging of the diamond during electron beam lithography and limitations of the etch depth due to the low plasma density in reactive ion etching systems. The presence of nitrogen vacancy centers in the fabricated nanostructures is confirmed by photoluminescence measurements. Display Omitted Existing technology for the fabrication of single crystal diamond cantilevers for magnetometry experiments is extended30kV electron beam lithography and standard reactive ion etching processes can be usedA precise alignment method using two sets of marks is used for alignment on the backside of the sampleA thin Ti layer underneath the resist promotes good adhesion for nanostructures and prevents charging during lithography

We develop an approach to design, engineer, and measure band structures in a synthetic crystal composed of electric circuit elements. Starting from the nodal analysis of a circuit lattice in terms of currents and voltages, our Laplacian formalism for synthetic matter allows us to investigate arbitrary tight-binding models in terms of wave number resolved Laplacian eigenmodes, yielding an admittance band structure of the circuit. For illustration, we model and measure a honeycomb circuit featuring a Dirac cone admittance bulk dispersion as well as flat band admittance edge modes at its bearded and zigzag terminations. We further employ our circuit band analysis to measure a topological phase transition in the topolectrical Su-Schrieffer-Heeger circuit., Comment: 4+e pages, 4 pages supplement, 5 figures

Invented by Alessandro Volta and F\'elix Savary in the early 19th century, circuits consisting of resistor, inductor and capacitor (RLC) components are omnipresent in modern technology. The behavior of an RLC circuit is governed by its circuit Laplacian, which is analogous to the Hamiltonian describing the energetics of a physical system. We show that topological semimetal band structures can be realized as admittance bands in a periodic RLC circuit, where we employ the grounding to adjust the spectral position of the bands similar to the chemical potential in a material. Topological boundary resonances (TBRs) appear in the impedance read-out of a topolectrical circuit, providing a robust signal for the presence of topological admittance bands. For experimental illustration, we build the Su-Schrieffer-Heeger circuit, where our impedance measurement detects a TBR related to the midgap state. Due to the versatility of electronic circuits, our topological semimetal construction can be generalized to band structures with arbitrary lattice symmetry. Topolectrical circuits establish a bridge between electrical engineering and topological states of matter, where the accessibility, scalability, and operability of electronics synergizes with the intricate boundary properties of topological phases., Comment: 11 pages, 4 figures

We review on time and spatially resolved two-color pump–probe magneto-optical Kerr effect (MOKE) microscopy studies of electron spins in bulk n-GaAs and GaAs (110) quantum wells (QWs) at low lattice temperatures. The influence of photocarrier heating by above-bandgap optical spin excitation on the spatially resolved magneto-optical spin detection is considered in detail. We demonstrate that a continuous-wave (cw) measurement of the local Kerr rotation at a fixed arbitrary probe wavelength in general does not correctly reveal the local spin polarization when hot electrons are present. For bulk GaAs we determine the true lateral electron spin polarization profile from cw measurements of the spatial dependence of the full excitonic Kerr rotation spectrum. For the (110) QWs, we directly obtain the electron spin diffusion coefficient from picosecond real space imaging of the time evolution of an optically excited electron spin packet, which we observe with a spectrally broad probe pulse.

We use time-resolved photoluminescence (TRPL) spectroscopy to unequivocally clarify the microscopic origin of the nanosecond free exciton photoluminescence rise in GaAs at low temperatures. In crucial distinction from previous work, we examine the TRPL of the GaAs free exciton second LO-phonon replica. This enables us to simultaneously monitor the unambiguous time evolution of the total exciton population and the cooling dynamics of the initially hot free exciton ensemble. We demonstrate by a model based on the Saha equation and the experimentally determined cooling behavior that the long-debated slow photoluminescence rise is caused by time-dependent shifts in the thermodynamic quasiequilibrium between free excitons and the uncorrelated electron-hole plasma.

We summarize experimental studies on the optical polarization properties of MBE-grown shape-asymmetric self-assembled CdSe/ZnSe quantum dots (QDs). The zero magnetic field fine structure splitting of excitonic transitions in structurally anisotropic QDs gives rise to an effective linear-to-circular and circular-to-linear optical polarization conversion upon resonant excitation of the QD ensemble. The effect is qualitatively modelled in terms of a pseudospin formalism. Furthermore, we show how an in-plane magnetic field leads to a complex rotation behavior of the axis of the optical polarization. Our analysis based on the exciton pseudospin Hamiltonian unambiguously displays that these effects are induced by isotropic and anisotropic contributions to the heavy hole Zeeman term. Likewise we show that the latter mechanism can be used to tune the optical respone of shape-anisotropic QDs such that the optical polarization properties are equal to QDs of perfect D2d symmetry. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Formation and properties of quantum dots (QDs) and related nanostructures by conventional molecular beam epitaxy (MBE) and two other variants of the technique, have been systematically investigated. While MBE growth of CdSe on ZnSe at 300 °C results in the formation of rough CdSe quantum-well-like structures, by one of the variants, which combines epitaxial growth of a CdSe layer at 230 °C and subsequent in-situ annealing at 310-340 °C, tiny but distinct three-dimensional (3D) QDs are formed. We demonstrate that QD formation by this method, developed originally by Rabe et al. (J. Cryst. Growth 184/185, 248 (1998) [30]), essentially takes place during the annealing step, by a process of “controlled roughening” of the as-grown quasi-two-dimensional (2D) CdSe layer. In comparison to conventional MBE, this process results in reduction of the areal density of the self-organized QDs by up to two orders of magnitude, thus making them distinctly discernible. In the second variant technique, similar to that applied originally for the self-organization of CdTe/ZnTe quantum dots by Tinjod et al. (Appl. Phys. Lett. 82, 4340 (2003) [34], QD-formation takes place as a result of deposition of an amorphous group-VI layer onto a strained 2D CdSe layer at ∼ 50 °C, and its subsequent re-desorption at temperatures of 280-320 °C. While deposition and desorption of amorphous Se leads to the formation of large isolated QDs, we show that use of amorphous Te results in the self-assembly and ordering of a rich variety of nanostructures. Luminescence, morphology, and composition of QDs and the underlying formation mechanism of the three processes are discussed in detail. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Layer-by-layer epitaxial growth of CdSe on ZnSe has been observed at temperatures as low as 170–240 °C. Beyond this range, Reflection high energy electron diffraction (RHEED) specular spot intensity oscillations disappear, signifying a multilayer growth mode. While conventional epitaxial growth of CdSe at ∼300 °C results in formation of a rough layer-like structure, a method combining the epitaxial growth of a quasi-two-dimensional (2D) CdSe layer at 230 °C and subsequent annealing at 310 °C induces the formation of discrete CdSe quantum dots (QDs). Here we show that the formation of QDs by this method relies essentially on the layer-by-layer growth of CdSe at 230 °C, which allows an induced roughening of the as-grown 2D layer, during the subsequent annealing step. The layer-by-layer growth mode results possibly due to the nucleation of small and irregular precursor 2D clusters during growth at low temperatures, at the kink sites of which potential barriers for downward inter-layer transport of adatoms is low/absent.

We report on low-temperature spatially resolved photoluminescence (SRPL) experiments to study the diffusion of free excitons in a $1.5\text{\ensuremath{-}}\ensuremath{\mu}\mathrm{m}$-thick layer of high-purity epitaxial GaAs. Extending previous SRPL experiments, we analyze the stationary diffusion profiles detected on the second LO-phonon replica of the free exciton. This allows us to circumvent the inherent interpretation ambiguities of the free-exciton zero-phonon line. Moreover, a spatially resolved line shape analysis of the $(FX)\ensuremath{-}2\ensuremath{\hbar}{\mathrm{\ensuremath{\Omega}}}_{\text{LO}}$ replica provides direct experimental access to the pump-induced exciton temperature profile. We demonstrate that only resonant optical excitation prevents the buildup of a temperature gradient in the carrier system, which otherwise severely distorts the stationary and time-resolved free-exciton diffusion profiles.

We report on the observation of macroscopic free exciton photoluminescence (PL) rings that appear in spatially resolved PL images obtained on a high purity GaAs sample. We demonstrate that a spatial temperature gradient in the photocarrier system, which is due to nonresonant optical excitation, locally modifies the population balance between free excitons and the uncorrelated electron-hole plasma described by the Saha equation and accounts for the experimentally observed nontrivial PL profiles. The exciton ring formation is a particularly instructive manifestation of the spatially dependent thermodynamics of a partially ionized exciton gas in a bulk semiconductor.

Resonant photoluminescence and photoluminescence excitation spectroscopy have been applied to CdSe/ZnSe quantumdots where separation between the quantized levels is close to the optical phonon energy. Astrong relaxation enhancement induced by the optical phonon is observed. The fine structure of the phonon replicas is resolved. It is attributed to the optical phonons with large wave vectors from the symmetrical points of the Brillouin zone. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

We present comprehensive studies of in-plane optical anisotropy in CdSe/ZnSe quantum dot ensembles. The anisotropy reveals itself as circular-to-linear polarization conversion and as an alignment occurring at resonant excitation without any applied magnetic fields. The variation of the anisotropy in different dots has been analyzed based on angle scans. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

We report on spin memory relaxation time τ s of free electrons in CdTe-based quantum wells which is found to be in the nanosecond range. In these studies two different techniques have been exploited: (i) the Hanle effect under cw excitation and (ii) the time-resolved pump-&-probe Kerr rotation measured under excitation by 1.8-ps optical pulses. These independent techniques give very close results τ s =19 ns and τ s = 14 ns, respectively. To our knowledge this is by two orders of magnitude longer than the electron spin relaxation times reported for CdTe-based quantum wells so far.

We use two-color magneto-optical Kerr (MOKE) microscopy to study low-temperature electron spin diffusion in bulk n-type GaAs (n = 1.4 × 1016 cm−3). We show that simple drift-diffusion models do not describe the spin diffusion for above-bandgap optical spin injection correctly. By variation of the excitation energy and lattice temperature we demonstrate that this discrepancy is caused by the influence of the pump-induced local overheating of the electron system with respect to the lattice, which persists over length scales comparable to the spin diffusion length. Consideration of this hot carrier effect is crucial for a reliable extraction of spin propagation parameters from optical experiments.

We report on a process that enables the removal of II-VI semiconductor epilayers from their GaAs growth substrate and their subsequent transfer to arbitrary host environments. The technique combines mechanical lapping and layer selective chemical wet etching and is generally applicable to any II-VI layer stack. We demonstrate the non-invasiveness of the method by transferring an all-II-VI magnetic resonant tunneling diode. High resolution X-ray diffraction proves that the crystal integrity of the heterostructure is preserved. Transport characterization confirms that the functionality of the device is maintained and even improved, which is ascribed to completely elastic strain relaxation of the tunnel barrier layer.

Cell biophysics sheds some new light on cancer by approaching this complex problem from a materials science perspective.

We use time-resolved two-color Kerr microscopy to study low-temperature electron spin diffusion in bulk GaAs with high spatial and temporal resolution. This method enables direct real-space imaging of the advancing spread of an optically excited electron spin packet by spin diffusion. We observe a high initial expansion rate of the spin packet, which is strongly reduced with increasing time. Comparison with continuous-wave Kerr spectroscopy demonstrates that this decrease is caused by the influence of the transient cooling of hot photocarriers on the electron spin diffusion coefficient.

International audience; Deciphering the multifactorial determinants of tumor progression requires standardized high-throughput preparation of 3D in vitro cellular assays. We present a simple microfluidic method based on the encapsulation and growth of cells inside permeable, elastic, hollow microspheres. We show that this approach enables mass production of size-controlled multicellular spheroids. Due to their geometry and elasticity, these microcapsules can uniquely serve as quantitative mechanical sensors to measure the pressure exerted by the expanding spheroid. By monitoring the growth of individual encapsulated spheroids after confluence, we dissect the dynamics of pressure buildup toward a steady-state value, consistent with the concept of homeostatic pressure. In turn, these confining conditions are observed to increase the cellular density and affect the cellular organization of the spheroid. Postconfluent spheroids exhibit a necrotic core cemented by a blend of extracellular material and surrounded by a rim of proliferating hypermotile cells. By performing invasion assays in a collagen matrix, we report that peripheral cells readily escape preconfined spheroids and cell–cell cohesivity is maintained for freely growing spheroids, suggesting that mechanical cues from the surrounding microenvironment may trigger cell invasion from a growing tumor. Overall, our technology offers a unique avenue to produce in vitro cell-based assays useful for developing new anticancer therapies and to investigate the interplay between mechanics and growth in tumor evolution. tissue mechanics | microfluidics | tumor growth | mechanotransduction

We report on spatially resolved pump-probe MOKE spectroscopy measurements of electron spins in bulk $n$-type GaAs. For low lattice temperatures these measurements are significantly compromised by local changes in the excitonic magneto-optical response which are not related to the electron spin polarization. These local changes in the excitonic Kerr spectrum are due to carrier heating caused by above-band-gap optical excitation. When hot electrons are present, a measurement of the local Kerr rotation at a fixed arbitrary probe wavelength does not necessarily correctly reveal the local electron spin polarization. By analyzing the spatial dependence of the full excitonic Kerr rotation spectrum we determine the local excitonic spin splitting energy from which we obtain the true lateral electron spin polarization profile.

We report on spatially resolved two-color pump-probe Hanle--magneto-optical Kerr effect studies of low-temperature electron spin diffusion in bulk $n$-type GaAs (${n}_{D}=1.4\ifmmode\times\else\texttimes\fi{}{10}^{16}\phantom{\rule{4pt}{0ex}}{\mathrm{cm}}^{\ensuremath{-}3}$). The influence of the lattice temperature on electron spin diffusion is investigated and it is shown that simple drift-diffusion models do not describe the spin diffusion for above-band-gap optical spin injection correctly. Variation of lattice temperature and excitation energy allow us to trace this discrepancy to the influence of the pump-induced local overheating of the electron system with respect to the lattice which persists over length scales comparable to the spin diffusion length. Consideration of this hot carrier effect is crucial for a reliable extraction of spin propagation parameters from optical experiments.

We report on spatially resolved cw-photoluminescence studies of very-low-doped $n$- and $p$-type GaAs, which demonstrate that optically excited electrons retain significant excess energy on length scales of several tens of microns away from the excitation point. In contrast, the lattice is heated only negligibly outside the optical excitation area even for moderate excitation intensities. When diffusing away from the excitation site the photoelectrons are therefore not in thermal equilibrium with the lattice. Our results imply that it is inappropriate to describe low temperature photocarrier diffusion in GaAs with a spatially uniform diffusion constant.

We report a photoinduced change of the coercive field, i.e., a photocoercivity effect (PCE), under very low intensity illumination of a low-doped (Ga,Mn)As ferromagnetic semiconductor. We find a strong correlation between the PCE and the sample resistivity. Spatially resolved dynamics of the magnetization reversal rule out any role of thermal heating in the origin of this PCE, and we propose a mechanism based on the light-induced lowering of the domain wall pinning energy. The PCE is local and reversible, allowing writing and erasing of magnetic images using light.

We report a surprisingly long spin relaxation time of electrons in Mn-doped p-GaAs. The spin relaxation time scales with the optical pumping and increases from 12 ns in the dark to 160 ns upon saturation. This behavior is associated with the difference in spin relaxation rates of electrons precessing in the fluctuating fields of ionized or neutral Mn acceptors, respectively. For the latter the antiferromagnetic exchange interaction between a Mn ion and a bound hole results in a partial compensation of these fluctuating fields, leading to the enhanced spin memory., 4 pages, 4 figures

We report on low-temperature spatially resolved photoluminescence spectroscopy to study the diffusion of free excitons in etched wire structures of high-purity GaAs. We assess the stationary diffusion profiles by the free exciton second LO-phonon replica to circumvent the inherent interpretation ambiguities of the previously investigated free exciton zero-phonon line. Moreover, strictly resonant optical excitation prevents the distortion of the diffusion profiles due to local heating in the carrier system. We observe a dimensional crossover from 2D to 1D exciton diffusion when the lateral wire width falls below the diffusion length.

We report circular-to-linear and linear-to-circular conversion of optical polarization by semiconductor quantum dots. The polarization conversion occurs under continuous wave excitation in the absence of any magnetic field. The effect originates from quantum interference of linearly and circularly polarized photon states, induced by the natural anisotropic shape of the self-assembled dots. The behavior can be qualitatively explained in terms of a pseudospin formalism.

We report on a complex nontrivial behavior of the optical anisotropy of quantum dots that is induced by a magnetic field in the plane of the sample. We find that the optical axis either rotates in the opposite direction to that of the magnetic field or remains fixed to a given crystalline direction. A theoretical analysis based on the exciton pseudospin Hamiltonian unambiguously demonstrates that these effects are induced by isotropic and anisotropic contributions to the heavy-hole Zeeman term, respectively. The latter is shown to be compensated by a built-in uniaxial anisotropy in a magnetic field B_c = 0.4 T, resulting in an optical response typical for symmetric quantum dots., Comment: 5 pages, 3 figures

We describe a two-color pump-probe scanning magneto-optical Kerr effect (MOKE) microscope which we have developed to investigate electron spin phenomena in semiconductors at cryogenic temperatures with picosecond time and micrometer spatial resolution. The key innovation of our microscope is the usage of an ultrafast `white light' supercontinuum fiber-laser source which provides access to the whole visible and near-infrared spectral range. Our Kerr microscope allows for the independent selection of the excitation and detection energy while avoiding the necessity to synchronize the pulse trains of two separate picosecond laser systems. The ability to independently tune the pump and probe wavelength enables the investigation of the influence of excitation energy on the optically induced electron spin dynamics in semiconductors. We demonstrate picosecond real-space imaging of the diffusive expansion of optically excited electron spin packets in a (110) GaAs quantum well sample to illustrate the capabilities of the instrument., Comment: 10 pages, 4 figures