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44. Infrared Microbolometer Sensors and Their Application in Automotive Safety.

Author

Valldorf, Jürgen, Gessner, Wolfgang, Yon, J. J., Mottin, E., Biancardini, L., Letellier, L., and Tissot, J. L.

Abstract

Recently the emergence of a new generation of infrared sensors — the microbolometer technology — based on an infrared thermal detection mechanism which is particularly suited to operate at ambient temperature has opened the opportunity for achieving low cost infrared imaging systems for both military and commercial applications. In a first part, this paper gives an overview of this challenging technology highlighting the main characteristics of the sensors developed by LETI that are particularly relevant to automotive applications. A special highlight on recent results concerning the 160×120 focal plane array with a pixel pitch of 35µm is given. In a second part, the use of this technology in automotive safety field is illustrated through an application of detection of moving objects in front of a vehicle. The results shows that infrared sensors based on well-designed microbolometers represent a real middle-term alternative to usual video sensors. [ABSTRACT FROM AUTHOR]

Published
2003
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45. Status of Uncooled Infrared Detector Technology at ULIS, France.

Author

Tissot, J. L., Robert, P., Durand, A., Tinnes, S., Bercier, E., and Crastes, A.

Subjects
INFRARED detectors, DETECTORS, BOLOMETERS, METEOROLOGICAL instruments
Abstract

The high level of accumulated expertise by ULIS and CEA/LETI on uncooled microbolometers made from amorphous silicon enables ULIS to develop uncooled infrared focal plane array (IRFPA) with 17 µm pixel-pitch to enable the development of small power, small weight and power and high performance IR systems. Key characteristics of amorphous silicon based uncooled IR detector is described to highlight the advantage of this technology for system operation. A full range of products from 160 x 120 to 1024 x 768 has been developed and we will focus the paper on the 1/4 VGA with 17 µm pixel pitch. Readout integrated circuit (ROIC) architecture is described highlighting innovations that are widely on-chip implemented to enable an easier operation by the user. The detector configuration (integration time, windowing, gain, scanning direction), is driven by a standard I²C link. Like most of the visible arrays, the detector adopts the HSYNC/VSYNC free-run mode of operation driven with only one master clock (MC) supplied to the ROIC which feeds back pixel, line and frame synchronisation. On-chip PROM memory for customer operational condition storage is available for detector characteristics. Low power consumption has been taken into account and less than 60 mW is possible in analogue mode at 60 Hz. A wide electrical dynamic range (2.4V) is maintained despite the use of advanced CMOS node. The specific appeal of this unit lies in the high uniformity and easy operation it provides. The reduction of the pixel-pitch turns this TEC-less 1/4 VGA array into a product well adapted for high resolution and compact systems. Noise equivalent temperature difference (NETD) of 35 mK and thermal time constant of 10 ms have been measured leading to 350 mK.ms figure of merit. We insist on NETD tradeoff with wide thermal dynamic range, as well as the high characteristics uniformity and pixel operability, achieved thanks to the mastering of the amorphous silicon technology coupled with the ROIC design. This technology node associated with advanced packaging technique, paves the way to compact low power system. [ABSTRACT FROM AUTHOR]

Published
2013
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48. 32×32 planar IR photovoltaic mosaic arrays on sputtered CdxHg1-xTe epilayers.

Author

Roussille, R., Amingual, D., Boch, R., Destefanis, G. L., and Tissot, J. L.

Subjects
MERCURY cadmium tellurides, SPUTTERING (Physics), EPITAXY, HALL effect, MATHEMATICAL models
Abstract

Epitaxial n-type CdxHg1-xTe layers on (111) CdTe substrates have been grown between 250 and 300 °C by sputtering deposition. The standard growth rate was nominally 2 μm/h for a thickness range from 10 to 30 μm. Typical electron concentration in CdxHg1-xTe layers with Cd composition of 0.34 is around of 2×1016 cm-3 with a Hall mobility of 20 000 cm2 V-1 s-1 at 77 K. Films can be converted to p type after annealing. We report for the first time the characteristics of backside illuminated 32×32 planar photovoltaic mosaic arrays processed on sputtered layers. Hybrid structures have been fabricated and evaluated; the preliminary results indicate the suitability of these mosaics for hybrid focal plane applications. [ABSTRACT FROM AUTHOR]

Published
1984
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49. A Space-based Far Infrared Interferometer (FIRI) instrument simulator and test-bed implementation

Author

Mazuray, L., Wartmann, R., Wood, A. P., de la Fuente, M. C., Tissot, J.-L. M., Raynor, J. M., Kidger, T. E., David, S., Benítez, P., Smith, D. G., Wyrowski, F., Erdmann, A., Juanola-Parramon, Roser, Ade, Peter A. R., Grainger, William F., Griffin, Matthew Joseph, Pascale, Enzo, Savini, Giorgio, Spencer, Locke, Swinyard, Bruce, Mazuray, L., Wartmann, R., Wood, A. P., de la Fuente, M. C., Tissot, J.-L. M., Raynor, J. M., Kidger, T. E., David, S., Benítez, P., Smith, D. G., Wyrowski, F., Erdmann, A., Juanola-Parramon, Roser, Ade, Peter A. R., Grainger, William F., Griffin, Matthew Joseph, Pascale, Enzo, Savini, Giorgio, Spencer, Locke, and Swinyard, Bruce

Abstract

FIRI (Far Infrared Interferometer) is a concept for a spatial and spectral interferometer with an operating wavelength range 25-300 μm and sub-arcsecond angular resolution, and is based in the combination of two well-known techniques, Stellar Interferometry and Fourier Transform Spectroscopy to achieve high spectral and spatial resolution in the Far Infrared. The resulting technique is called Double Fourier Spatio-Spectral Interferometry (Mariotti and Ridgway 1988). With increased spatial and spectral resolution a number of interesting science cases such as the formation and evolution of AGN and the characterization of gas, ice and dust in disks undergoing planetary formation, among others, can be investigated. Here the current status of the design of the FIRI system via an instrument simulator is presented, as well as the results of a test-bed implementation.© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

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