Search

Ablation of indium oxide doped with tin oxide (ITO) from glass substrates is described. Laser pulse energy and focus spot size were varied in single-pulse, single-spot ablation tests and for ablation of linear features with scanned multiple pulses. The single-pulse ablation threshold of ITO was smaller than that of the glass substrate so the entire thickness of ITO could be removed in a single pulse or with overlying multiple pulses without the possibility of substrate ablation. Linear features could be created at much higher scanning speeds using a high repetition frequency (100 kHz) Yb fiber amplified laser as compared to a lower repetition frequency (2 kHz) laser. An analysis showed that incubation effects lowered ITO ablation thresholds when pulse frequency was high relative to scanning speed, contributing to large feasible scanning speeds for high pulse frequency lasers. OCIS codes: 140.7090, 220.4000.

Indium tin oxide (ITO) thin films were grown onto soda-lime glass substrates by sputtering at room-temperature to study its optical and electrical characteristics. It was found that the as-grown amorphous layers crystallize in the cubic structure by heating above 200 degree Celsius and the crystalline films show extensive structural distortion.

The synthesis of some compounds belonging to the [Cu.sub.2]Sn[S.sub.3]-[Cu.sub.2]Si[S.sub.3] system and the crystal structure determination are described. The compounds were found to crystallize in a monoclinic structure like the pure phases and there was a smooth decrease in the crystallographic parameters with x despite the large difference between the radii of Sn and Si.

A simplified collisional-radiative model (CRM) and radiative transfer solution for isotropic medium are used to investigate the characteristics of conversion efficiency (CE) in nonlocal thermodynamic equilibrium (non-LTE) tin (Sn) plasma. The results have shown that by increasing the repetitive rate of pulsed-power generation, an efficient high-power extreme ultraviolet (EUV) light-source can be achieved that is required for lithography.

Sapphire substrates coated with a gold (Au) layer in place of indium-tin-oxide (ITO) on glass substrates are used as hole-injecting anodes in organic light-emitting devices (OLEDs). Due to the unique quality of the sapphire/Au interface and match of Au work function with the highest occupied molecular orbital level of the adjacent hole transport layer (HTL), and the smoothness of the interface, he ITO-free OLED, achieved an increase in current efficiency by more than a factor of three.

The optogeometric properties of various sensitive thin films involved in gas sensing applications are investigated by using the m-line technique and atomic force microscopy. Variations of these optical properties are studied under butane and ozone exposure. OCIS codes: 310.2790, 310.6860.

Two-dimensional SnO2 nanograsses were synthesized on single-crystal Si substrates by catalyst-assisted thermal evaporation. The photoluminescence spectra from the products revealed multipeaks consistent with previous reports, with the exception of a new peak at 574 nm.

Indium tin oxide (ITO) thin films on polyethylene napthalene (PEN) of both good electrical and optical properties were obtained by radio-frequency sputtering. A model is proposed that the optical transmittance in the visible region is governed by the carrier concentration in the ITO thin films.

A plasma beam scanning treatment is developed to modify the surface of the hydrogenated amorphous carbon (a-C:H) film on the indium tin oxide glass. The plasma beam scanning treatment makes the a-C:H film an excellent layer for liquid-crystal alignment.

A ZnO/SnO2 core-shell heterostructure is used to demonstrate the possibility of establishing a three-dimensional epitaxial interface between two materials with different crystal systems for the first time and show possible tailoring optical properties by building the heteroepitaxial crystal interface. The structural characterizations show that as-prepared ZnO/SnO2 heterostructure exhibits unique luminescence properties in contrast with individual tetrapod ZnO and SnO2 nanostructures, in which the epitaxial interface induces new luminescence properties.

The volatile metal-organic precursors tris(2,2,6,6-tetramethyl-3,5-heptanedionato(indium(III) [In(dpm)(sub3)], bis(2,4-pentanedionato)tin(II) [Sn(acac)(sub2)], and bis(2,2,6,6-tetramethyl-3,5-heptanedionato)(N,N,N'N'-tetramethylenediamine)magnesium(II) [Mg(dpm)(sub2)(TMEDA)] is used to grow Mg- and Sn-doped In2O3 (Mgln(sub x)Sn(sub y)O(sub z), 6.0

We developed an interdigitated array electrode (IDAE) consisting of a metal oxide electrode and a metal band heteroeleclxode and employed it for the selective detection of catecholamines. We used an indium-tin oxide (ITO) film as the oxidation electrode of the IDAE because the ITO was able to suppress response currents from L-ascorbic acid (AA) and uric acid (UA), which are major electroactive interferents in biological fluids. However, the ITO film also suppresses the reduction of quinones including oxidized catecholamines. We developed a simple technique for fabricating our hetero IDAE, which also preserves the electrochemical properties of the ITO. When we compared hetero ITO-gold, homo ITO-ITO, and carbon carbon IDAEs, we found that the hetero IDAE provided both high sensitivity and selectivity for DA detection. We achieved high selectivities for DA against AA and UA. The ratios of the response currents of AA and UA to DA were calculated as 6 and 5%, respectively.

A study indicates the emission into air, substrate, polymer/indium tin oxide (ITO), and surface-plasmon modes of polymer light-emitting diodes by using numerical modeling techniques. Details of the possible benefits of various light extraction strategies are discussed.

The initial growth mode of indium tin oxide on polycarbonate (PC) substrates is investigated. The change of the growth mode was attributed to oxygen-bound functional groups newly formed on the PC surface and models based on thermodynamic theory and on atomic kinetic approach are presented to explain the transition.

An in situ experimental analysis of the growth process of tin dioxide nanoparticles and the oriented attachment of these particles onto tin oxide nanobelts used as single crystalline substrates through electron irradiation by transmission electron microscopy is reported. The grain rotation is likely induced by the thermal energy provided by the electron beam.

The study synthesizes the nanocrystalline mixtures of Sn(II) and Sn(IV) oxide powders, potential gas sensor materials via a simple precipitation route using SnCl2 as the precursor. Materials are characterizes by powders X-ray diffraction, thermogravimetric analysis, UV-visible diffuse reflectance spectroscopy (DRS), and Fourier transform infrared spectroscopy.

Variable angle reflectance FTIR spectroscopy was used to investigate the optical properties of indium tin oxide (ITO) and fluorine-doped tin oxide (SFO) thin films in the near-IR spectral region. The reflectance, plasma frequency, and electronic scattering time of ITO thin films were found to be dependent on the sheet resistance.

Modifications of optical properties of indium tin oxide (ITO) films and of c-Si/a-Si:H/ITO heterostructures induced by thermal annealing at temperatures in the range 250-650 degree Celsius are analyzed. Thermal annealing at treatments of a Si:H/c-Si heterojunction (HJ) solar cell are performed in order to reduce series resistance between the metal collecting grid and the amorphous silicon layer, increasing the photovoltaic conversion efficiency.

Characteristics of electroluminescence from indium tin oxide (ITO)/SiO2/Si metal-oxide-semiconductor (MOS) structures fabricated on both p-type and n-type SI wafers are investigated. The electroluminescence from ITO/SiO2/Si(n) is found to be less than that from the Al/SiO2/Si(n).

Exploiting of work function changes on acid and base treated indium tin oxide (ITO) anodes to alter the properties of light emitting devices is described. The UPS and surface photovoltage measurements are compared on a variety of device structures and a microscopic picture of interfacial modifications is built in explaining the current-voltage and brightness characteristics of organic light emitting diodes (OLEDs).

Tin-oxide (SnO2) thin films are prepared by a modified spray technique called electrostatic spray pyrolysis. The electrical, optical, and structural properties are influenced by the variations of the reaction kinetics resulting from the variations of the substrate-nozzle distance and the substrate temperature and indicate that films of good quality like SnO2:F can be deposited by this novel technique.

ZnSe-based homoepitaxial metal-semiconductor-metal photodetectors with transparent indium-tin-oxide (ITO) contact electrodes were fabricated. It was found that although ITO transparent contact electrodes could result in large photon absorption and large photocurrents, the low Schottky barrier height between ITO and homoepitaxial ZnSe would also result in relatively large dark currents.

The synthesis, structure and the persistent luminescence and up conversion photostimulated luminescence properties exhibited by the nondoped [Mg.sub.2]Sn[O.sub.4] material are analyzed. The shallow, as well as the deep traps present in the material are shown to be highly responsible for the luminescence.

X-ray photoelectron spectroscopy (XPS) and contact angle measurements are used for characterizing patterned organic light-emitting-diode (OLED) substrates comprising indium-tin-oxide and a photoresist, both of which are modified by treatment with oxygen and tetrafluoromethane in a radiofrequency low-power capacitively coupled plasma as a function of time. The correlations for both the indium-tin-oxide and the photoresist surfaces are extended to a wider range of compositions in order to establish the physciochemical properties of particular surface functional groups that control water contact angles by the method.

The eight-band k.p. model is engaged to explain the optical performance of the antimonide-based InAs/GaSb/InSb short-period superlattice (SPSL) laser diode. The optical gain and the threshold current density of the diode are also determined.

The structural, optical, and electrical characteristics of zinc sulfide (ZnS)/Ag/ZnS (ZAZ) multilayer films prepared by ion beam assisted deposition on k9 glass are examined as a function of Ag layer thickness. The results have shown that ZAZ film has better optoelectrical properties than conditional indium tin oxide single layer.

A combination of the x-ray diffraction and atomic force microscopy techniques is employed to explain the structure, as well as the surface morphologies and properties of the ultrathin tin oxide films prepared by the pulsed laser deposition technique. The photoluminescence emission of the nanoparticles is shown to be completely dependent on the presence of the oxygen vacancies.

Several first principles calculations based on the density functional theory are conducted to explain the various electronic, elastic, as well as the optical properties of XC (X = Si, Ge, and Sn), as exhibited under extremely high pressure. The various technological applications of such compounds, as demonstrated in extreme environmental conditions are also analyzed.

A coevaporation technique with microenvironmental control is used to fabricate a semiconductor CdS/CdS:Sn[S.sub.2] superlattice microwire. The developed system could be applied to produce multicolor emissions, low-threshold lasing, study light-matter interaction, slow light engineering, and weak nonlinear optical devices.

The synthesis and properties of the all-amorphous, optically transparent and mechanically flexible thin-film transistors (TF-TFTs) are discussed. The approach used for the formation of various bilayers gate dielectrics is also presented.

[Cu.sub.2]O thin films are deposited by direct current reactive magnetron sputtering on borofloat glass and indium t in oxide (ITO) coated glass and the effect of oxygen partial pressure on the structures and properties of [Cu.sub.2]O thin films are examined. The higher conduction band of the [Cu.sub.2]O relative to that of gallium doped ZnO (GZO) in the band alignment has shown that the heterojunctions are suitable for solar cell application based on energy levels consideration.

Bis[bis(trimethylsilyl)amino]tin(II) is injected into hot trioctylphosphine:selenium in the presence of oleylamine to perform the colloidal synthesis of SnSe nanoparticles. The detailed studies on nanoparticles provide insight into surface chemistry effects, anisotropic particle growth and transient current-voltage properties of SnSe nanocrystals films in dark and light.

A transient absorption and luminescence study is used for addressing the charge separation, recombination and regeneration reactions at nanostructured metal oxide/PbS quantum dot/organic hole conductor heterojunctions. The studies have shown a correlation between the PbS particle size and the yield of charge separation at PbS/Sn[O.sub.2] interfaces, with a smaller PbS particle radius that has resulted in a higher yield of charge separation.

A relativistic full-potential linearized augmented plane wave method is used for analyzing the electronic structure as well as the optical response of kesterite and stannite structures of [Cu.sub.2]ZnSn[S.sub.4] and [Cu.sub.2]ZnSn[Se.sub.4]. The characteristic anisotropy of the dielectric function in the stannite compounds has allowed for a complementary identification of the crystalline structure type and all four compounds have shown similar atomic-resolved density-of-states, dielectric function and optical absorption coefficient.

A newly developed method to optimize the indium tin oxide (ITO) thin films as front transparent electrode to maximize the efficiency of substrate type amorphous silicon (a-Si) based thin film solar cells is described. The results suggested that introduction of a small fraction of [O.sub.2] in the sputtering Ar gas reduced the sheet resistivity of the ITO film and improved its transmittance to achieve higher efficiency in a-Si solar cells.

High-resolution transmission electron microscopy and energy dispersive spectroscopy are used to study the Cu-doped Sn[O.sub.2] nanowires (NWs) synthesized by thermal chemical vapor transport method. The origin of room-temperature ferromagnetism in NWs are attributed to both the structure defects and strong p-d ferromagnetic coupling between the local magnetic moment of [Cu.sup.+] and the polarized valence electrons of the surrounding oxygen based on first-principles calculations.

The article explains the synthesis mechanisms involved in the synthesis of indium tin oxide (ITO) nanoparticles (NPs) with tunable surface plasmon resonance frequencies. ITO is shown to exhibit a free-electron conduction in the near-IR region.

Lasing characteristics of randomly assembled Sn[O.sub.2] backbone nanowires coated with ZnO nanofins are examined. The studies have shown that some portion of the hierarchical nanostructures is cooled down and the corresponding optical gain is maintained even at high substrate temperature.

The femtosecond transient absorption spectroscopy technique is employed to explain the carrier relaxation dynamics observed in the tin nitride ([Sn.sub.x][N.sub.y]) nanowires grown by chemical vapor deposition. The free carrier absorption rate is shown to be the main mechanism that dominates the carrier dynamics in the nanowires.

A study of individual tin oxide (Sn[O.sub.2]) nanowire and three-dimensional (3D) branched Sn[O.sub.2] nanowires decorated with Au nanoparticles as the substrates for surface-enhanced Raman scattering (SERS) application is described. The high SERS activity of the 3D branched Sn[O.sub.2] nanowires is attributed to the large number of Au droplets and the formation of lots of 'hot spots' in regions between adjacent Au droplets on tips of the branches.

A strong correlation observed between bismuth radical species and emission in the near infrared (NIR) region of SnO-doped bismuth-containing aluminoborate glass, (CaO-[B.sub.2][O.sub.3]-[Bi.sub.2][O.sub.3]-[Al.sub.2][O.sub.3]-Ti[O.sub.2]) (CaBBAT) is reported. The results from the comparison of the observed emission spectra with data for energy diagram confirmed that bismuth ion possessing low valence in the origin of broad emission in the NIR region.

The case of corrugated thin-film solar cells structures and the optimization of these structures are studied by considering photonics. The simulations on the typical pyramid sizes have demonstrated the optimization of the global light energy intake by using corrugations of increasing complexity.

A spectral line narrowing of the edge emission at room temperature from tris(quinolinolate)Al ([Alq.sub.3]), N,N'-diphenyl-N,N'-bis(1-naphthylphenyl)-1,1'-biphenyl-4,4'-diamine (NPD), 4,4'-bis(2,2'-diphenyl-vinyl)-1'-biphenyl (DPVBi) and guest-host small molecular organic light-emitting diodes (OLEDs) is described. The results have shown that the narrowed emission is due to irregular waveguide modes that leak from the indium tin oxide (ITO) to the glass substrate at a grazing angle.

Antimony doping tin oxide is used for realizing Sn[O.sub.2]:Sb (ATO) and plasma-assisted molecular beam epitaxy is used for growing high quality single crystalline epitaxial thin films of unintentionally doped (UID) and Sb-doped Sn[O.sub.2] on r-plane sapphire substrates. X-ray diffraction and atomic force microscopy measurements have not shown any detrimental effects arising from the highest levels of Sb incorporation.