1. CIGS thin film and device performance produced through a variation Ga concentration during three-stage growth process
- Author
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Yi-Yen Jseng, Tien-Ching Chen, Chin-Jung Chao, and Huan-Hsin Sung
- Subjects
010302 applied physics ,Three stage ,Materials science ,Mechanical Engineering ,Energy conversion efficiency ,Recombination rate ,Analytical chemistry ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Copper indium gallium selenide solar cells ,Mechanics of Materials ,0103 physical sciences ,General Materials Science ,Thin film ,0210 nano-technology ,Third stage ,Deposition (law) - Abstract
In this study, Cu(In,Ga)Se2 (CIGS) absorber is grown on Mo-coated soda-lime glass substrates through co-evaporation deposition. Several types of Ga distribution in CIGS was examined by adjusting the [Ga]/([In]+[Ga]) ratio at the first and third stages. The electrical properties of the film were also determined. The carrier concentration increased with increasing Ga content. The highest carrier concentration of 8.46 × 1015 cm−3 were obtained when the [Ga]/([In]+[Ga]) ratio (0.36) was 0.4: 0.3 at the first and third stage. The best device conversion efficiency of 12.5% was achieved because the suitable [Ga]/([In]+[Ga] ratio, band-gap gradient distribution and low recombination rate.
- Published
- 2018
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