136 results on '"Tiebout, Marc"'
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2. Body effect up- and down-conversion mixer circuits for low-voltage ultra-wideband operation
3. A 0.6-V 1.6-mW transformer-based 2.5-GHz downconversion mixer with +5.4-dB gain and -2.8-dBm IIP3 in 0.13-[micro]m CMOS
4. Analysis and Design of a 17-GHz All-npn Push-Pull Class-C VCO
5. Millimeter-Wave Avalanche Noise Sources Based on p-i-n Diodes in 130 nm SiGe BiCMOS Technology: Device Characterization and CAD Modeling
6. Class-J SiGe X-Band Power Amplifier Using a Ladder Filter-Based AM-PM Distortion Reduction Technique
7. A 17 GHz All-npn Push-Pull Class-C VCO
8. Low-Frequency Excess Noise Ratio Approximation for Avalanche Noise Diodes
9. Class-J SiGe$X$-Band Power Amplifier Using a Ladder Filter-Based AM–PM Distortion Reduction Technique
10. A 52-to-67 GHz dual-core push–push VCO in 40-nm CMOS
11. A quad-core 15GHz BiCMOS VCO with −124dBc/Hz phase noise at 1MHz offset, −189dBc/Hz FOM, and robust to multimode concurrent oscillations
12. System and method for a voltage controlled oscillator
13. A 52-to-67 GHz dual-core push-push VCO in 40-nm CMOS
14. A 21GHz 20.5%-tuning range Colpitts VCO with −119 dBc/Hz phase noise at 1MHz offset
15. A 12GHz 22dB-gain-control SiGe bipolar VGA with 2° phase shift variation
16. Phase Noise in a Differential CMOS Voltage-Controlled Oscillator for RF Applications
17. High-Selectivity E-Band Image-Reject Filters in SiGe Technology
18. A 12 GHz 22 dB-Gain-Control SiGe Bipolar VGA With 2° Phase-Shift Variation
19. SiGe BiCMOS VCO with 27% tuning range for 5G communications
20. A 52-to-67 GHz dual-core push–push VCO in 40-nm CMOS.
21. Fast hopping frequency synthesizer
22. A 12GHz 22dB-gain-control SiGe bipolar VGA with 2° phase shift variation
23. Design of Low-Noise $K$-Band SiGe Bipolar VCOs: Theory and Implementation
24. Silicon technologies and circuits for RF and mm-wave applications
25. SiGe BiCMOS technology and circuits for active safety systems
26. F4: Mm-Wave advances for active safety and communication systems
27. CMOS and SiGe Bipolar Circuits for High-Speed Applications
28. Class-J SiGe $X$ -Band Power Amplifier Using a Ladder Filter-Based AM–PM Distortion Reduction Technique.
29. A 75–81 GHz, 14.3 dBm peak output power, 21 dB peak gain, SiGe power-combining amplifier operating from a single 3.3 V supply
30. Session: RMO2B: RF & mm-Wave front-end techniques
31. A 76–84 GHz SiGe Power Amplifier Array Employing Low-Loss Four-Way Differential Combining Transformer
32. Session 20 overview: Frequency generation
33. SiGe BiCMOS technology and circuits for active safety systems.
34. Advanced Microwave Imaging
35. A SiGe bipolar VCO for backhaul E-band communication systems
36. Low Power Wideband Receiver and Transmitter Chipset for mm-Wave Imaging in SiGe Bipolar Technology
37. 9-GHz Wideband CMOS RX and TX Front-Ends for Universal Radio Applications
38. A X-Band ${\rm I}/{\rm Q}$ Upconverter in 65 nm CMOS for High Resolution FMCW Radars
39. A 0.06 mm$^{2}$ 11 mW Local Oscillator for the GSM Standard in 65 nm CMOS
40. Inductorless Low-Voltage and Low-Power Wideband Mixer for Multistandard Receivers
41. Reduction of RTS Noise in Small-Area MOSFETs Under Switched Bias Conditions and Forward Substrate Bias
42. Body effect up- and down-conversion mixer circuits for low-voltage ultra-wideband operation
43. Considerations on the measurement of active differential devices using baluns
44. A compact low-power 24 GHz transceiver for radar applications in 0.13 µm CMOS
45. Merged power amplifier and mixer circuit topology for radar applications in CMOS
46. A 0.059-mm2 10.8-mW local oscillator for GSM systems in 65-nm CMOS
47. Noise Reduction in CMOS Circuits Through Switched Gate and Forward Substrate Bias
48. Analysis and Design of an Integrated Notch Filter for the Rejection of Interference in UWB Systems
49. Suppression of Random Telegraph Signal Noise in small-area MOSFETs under switched gate and substrate bias conditions
50. UWB Fast-Hopping Frequency Generation Based on Sub-Harmonic Injection Locking
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