1. Open-circuit and short-circuit loss management in wide-gap perovskite p-i-n solar cells
- Author
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Caprioglio, P, Smith, JA, Oliver, RDJ, Dasgupta, A, Choudhary, S, Farrar, MD, Ramadan, AJ, Lin, Y-H, Christoforo, MG, Ball, JM, Diekmann, J, Thiesbrummel, J, Zaininger, K-A, Shen, X, Johnston, MB, Neher, D, Stolterfoht, M, and Snaith, HJ
- Subjects
Multidisciplinary ,General Physics and Astronomy ,General Chemistry ,General Biochemistry, Genetics and Molecular Biology - Abstract
In this work, we couple theoretical and experimental approaches to understand and reduce the losses of wide bandgap Br-rich perovskite pin devices at open-circuit voltage (VOC) and short-circuit current (JSC) conditions. A mismatch between the internal quasi-Fermi level splitting (QFLS) and the external VOC is detrimental for these devices. We demonstrate that modifying the perovskite top-surface with guanidinium-Br and imidazolium-Br forms a low-dimensional perovskite phase at the n-interface, suppressing the QFLS-VOC mismatch, and boosting the VOC. Concurrently, the use of an ionic interlayer or a self-assembled monolayer at the p-interface reduces the inferred field screening induced by mobile ions at JSC, promoting charge extraction and raising the JSC. The combination of the n- and p-type optimizations allows us to approach the thermodynamic potential of the perovskite absorber layer, resulting in 1 cm2 devices with performance parameters of VOCs up to 1.29 V, fill factors above 80% and JSCs up to 17 mA/cm2, in addition to a thermal stability T80 lifetime of more than 3500 h at 85 °C.
- Published
- 2023