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We investigate experimentally the quantum coherence of an electronic two-level system in a double quantum dot under continuous charge detection. The charge-state of the two-level system is monitored by a capacitively coupled single quantum dot detector that imposes a back-action effect to the system. The measured back-action is well described by an additional decoherence rate, approximately linearly proportional to the detector electron tunneling rate. We provide a model for the decoherence rate arising due to level detuning fluctuations induced by detector charge fluctuations. The theory predicts a factor of two lower decoherence rate than observed in the experiment, suggesting the need for a more elaborate theory accounting for additional sources of decoherence., Comment: 5 pages, 3 figures

Qubits require a compromise between operation speed and coherence. Here, we demonstrate a compromise-free singlet-triplet (ST) qubit, where the qubit couples maximally to the driving field while simultaneously coupling minimally to the dominant noise sources. The qubit is implemented in a crystal-phase defined double-quantum dot in an InAs nanowire. Using a superconducting resonator, we measure the spin-orbit interaction (SOI) gap, the spin-photon coupling strength and the qubit decoherence rate as a function of the in-plane magnetic-field orientation. We demonstrate a spin qubit sweet spot maximizing the dipolar coupling and simultaneously minimizing the decoherence. Our theoretical description postulates phonons as the most likely dominant noise source. The compromise-free sweet spot originates from the SOI suggesting that it is not restricted to this material platform, but might find applications in any material with SOI. These findings pave the way for enhanced engineering of these nanomaterials for next-generation qubit technologies.

In this work, we manipulate the phase shift of a Josephson junction using a parallel double quantum dot (QD). By employing a superconducting quantum interference device, we determine how orbital hybridization and detuning affect the current-phase relation in the Coulomb blockade regime. For weak hybridization between the QDs, we find $\pi$ junction characteristics if at least one QD has an unpaired electron. Notably the critical current is higher when both QDs have an odd electron occupation. By increasing the inter-QD hybridization the critical current is reduced, until eventually a $\pi$-0 transition occurs. A similar transition appears when detuning the QD levels at finite hybridization. Based on a zero-bandwidth model, we argue that both cases of phase-shift transitions can be understood considering an increased weight of states with a double occupancy in the ground state and with the Cooper pair transport dominated by local Andreev reflection.

Dephasing of a charge qubit is usually credited to charge noise in the environment. Here we show that charge noise may not be the limiting factor for the qubit coherence. To this end, we study coherence properties of a crystal-phase defined semiconductor nanowire double quantum dot (DQD) charge qubit strongly coupled to a high-impedance resonator using radio-frequency (RF) reflectometry. Response of this hybrid system is measured both at a charge noise sensitive operation point (with finite DQD detuning) and at an insensitive point (so-called sweet spot with zero detuning). A theoretical model based on Jaynes-Cummings Hamiltonian matches the experimental results well and yields only a 10 % difference in dephasing rates between the two cases, despite that the sensitivity to detuning charge noise differs by a factor of 5. Therefore the charge noise is not the limiting factor for the coherence in this type of semiconducting nanowire qubits., Comment: 7 pages, 3 figures

Tremendous progress in few-qubit quantum processing has been achieved lately using superconducting resonators coupled to gate voltage defined quantum dots. While the strong coupling regime has been demonstrated recently for odd charge parity flopping mode spin qubits, first attempts towards coupling a resonator to even charge parity singlet-triplet spin qubits have resulted only in weak spin-photon coupling strengths. Here, we integrate a zincblende InAs nanowire double quantum dot with strong spin-orbit interaction in a magnetic-field resilient, high-quality resonator. In contrast to conventional strategies, the quantum confinement is achieved using deterministically grown wurtzite tunnel barriers without resorting to electrical gating. Our experiments on even charge parity states and at large magnetic fields, allow to identify the relevant spin states and to measure the spin decoherence rates and spin-photon coupling strengths. Most importantly, we find an anti-crossing between the resonator mode in the single photon limit and a singlet-triplet qubit with an electron spin-photon coupling strength of $g/2\pi=139\pm4$ MHz. Combined with the resonator decay rate $\kappa/2\pi=19.8\pm0.2$ MHz and the qubit dephasing rate $\gamma/2\pi=116\pm7$ MHz, our system achieves the strong coupling regime in which the coherent coupling exceeds qubit and resonator linewidth. These results pave the way towards large-scale quantum system based on singlet-triplet qubits., Comment: Main text: 11 pages, 7 figures Supplementary: 5 pages, 4 figures

Quantum dots are frequently used as charge sensitive devices in low temperature experiments to probe electric charge in mesoscopic conductors where the current running through the quantum dot is modulated by the nearby charge environment. Recent experiments have been operating these detectors using reflectometry measurements up to GHz frequencies rather than probing the low frequency current through the dot. In this work, we use an on-chip coplanar waveguide resonator to measure the source-drain transport response of two quantum dots at a frequency of 6 GHz, further increasing the bandwidth limit for charge detection. Similar to the low frequency domain, the response is here predominantly dissipative. For large tunnel coupling, the response is still governed by the low frequency conductance, in line with Landauer-B\"uttiker theory. For smaller couplings, our devices showcase two regimes where the high frequency response deviates from the low frequency limit and Landauer-B\"uttiker theory: When the photon energy exceeds the quantum dot resonance linewidth, degeneracy dependent plateaus emerge. These are reproduced by sequential tunneling calculations. In the other case with large asymmetry in the tunnel couplings, the high frequency response is two orders of magnitude larger than the low frequency conductance G, favoring the high frequency readout., Comment: 12 pages 5 figures

Supercurrent transport is experimentally studied in a Josephson junction hosting a double quantum dot (DQD) with tunable symmetries. The QDs are parallel-coupled to two superconducting contacts and can be tuned between strong inter-dot hybridization and a ring geometry where hybridization is suppressed. In both cases, we observe supercurrents when the two interacting orbitals are either empty or filled with spins, or a combination. However, when each QD hosts an unpaired spin, the supercurrent depends on the spin ground state. It is strongly suppressed for the ring geometry with a spin-triplet ground state at zero external magnetic field. By increasing the QD hybridization, we find that a supercurrent appears when the ground state changes to spin-singlet. In general, supercurrents are suppressed in cases of spin doublet ground state, but an exception occurs at orbital degeneracy when the system hosts one additional spin, as opposed to three, pointing to a broken particle-hole symmetry.

We explore the energetics of microwaves interacting with a double quantum dot photodiode and show wave-particle aspects in photon-assisted tunneling. The experiments show that the single photon energy sets the relevant absorption energy in a weak-drive limit, which contrasts the strong drive limit where the wave amplitude determines the relevant-energy scale and opens up microwave induced bias triangles. The threshold condition between these two regimes is set by the fine-structure constant of the system. The energetics are determined here with the detuning conditions of the double dot system and stopping-potential measurements that constitute a microwave version of the photoelectric effect., Comment: 5 pages 4 figures

We study experimentally work fluctuations in a Szilard engine that extracts work from information encoded as the occupancy of an electron level in a semiconductor quantum dot. We show that as the average work extracted per bit of information increases towards the Landauer limit $k_BT \ln 2$, the work fluctuations decrease in accordance with the work fluctuation-dissipation relation. We compare the results to a protocol without measurement and feedback and show that when no information is used, the work output and fluctuations vanish simultaneously contrasting the information-to-energy conversion case where increasing amount of work is produced with decreasing fluctuations. Our work highlights the importance of fluctuations in the design of information-to-work conversion processes., Comment: 8 pages, 4 figures, appendix

We engineer a system of two strongly confined quantum dots to gain reproducible electrostatic control of the spin at zero magnetic field. Coupling the dots in a tight ring-shaped potential with two tunnel barriers, we demonstrate that an electric field can switch the electron ground state between a singlet and a triplet configuration. Comparing our experimental co-tunneling spectroscopy data to a full many-body treatment of interacting electrons in a double-barrier quantum ring, we find excellent agreement in the evolution of many-body states with electric and magnetic fields. The calculations show that the singlet-triplet energy crossover, not found in conventionally coupled quantum dots, is made possible by the ring-shaped geometry of the confining potential.

Proposals for quantum information applications are frequently based on the coherent manipulation of spins confined to quantum dots. For these applications, p-type III-V material systems promise a reduction of the hyperfine interaction while maintaining large $g$-factors and strong spin-orbit interaction. In this work, we study bottom-gated device architectures to realize single and serial multi-quantum dot systems in Schottky contacted p-type GaSb nanowires. We find that the effect of potentials applied to gate electrodes on the nanowire is highly localized to the immediate vicinity of the gate electrode only, which prevents the formation of double quantum dots with commonly used device architectures. We further study the transport properties of a single quantum dot induced by bottom-gating, find large gate-voltage dependent variations of the $g^*$-factors up to $8.1\pm 0.2$ as well as spin-orbit energies between $110$-$230\,\mu$eV., Comment: 7 pages, 4 figures

Single photon detectors are key for time-correlated photon counting applications [1] and enable a host of emerging optical quantum information technologies [2]. So far, the leading approach for continuous and efficient single-photon detection in the optical domain has been based on semiconductor photodiodes [3]. However, there is a paucity of efficient and continuous single-photon detectors in the microwave regime, because photon energies are four to five orders of magnitude lower therein and conventional photodiodes do not have that sensitivity. Here we tackle this gap and demonstrate how itinerant microwave photons can be efficiently and continuously converted to electrical current in a high-quality, semiconducting nanowire double quantum dot that is resonantly coupled to a cavity. In particular, in our detection scheme, an absorbed photon gives rise to a single electron tunneling event through the double dot, with a conversion efficiency reaching 6 %. Our results pave the way for photodiodes with single-shot microwave photon detection, at the theoretically predicted unit efficiency [4]., Comment: Updated to the published version, fixed references of the supplemental material

Studies of thermally induced transport in nanostructures provide access to an exciting regime where fluctuations are relevant, enabling the investigation of fundamental thermodynamic concepts and the realization of thermal energy harvesters. We study a serial double quantum dot formed in an InAs/InP nanowire coupled to two electron reservoirs. By means of a specially designed local metallic joule-heater, the temperature of the phonon bath in the vicinity of the double quantum dot can be enhanced. This results in phonon-assisted transport, enabling the conversion of local heat into electrical power in a nano-sized heat engine. Simultaneously, the electron temperatures of the reservoirs are affected, resulting in conventional thermoelectric transport. By detailed modelling and experimentally tuning the interdot coupling we disentangle both effects. Furthermore, we show that phonon-assisted transport gives access to the energy of excited states. Our findings demonstrate the versatility of our design to study fluctuations and fundamental nanothermodynamics., Comment: 11 pages, 4 figures + SI

We use co-tunneling spectroscopy to investigate spin-, orbital-, and spin-orbital Kondo transport in a strongly confined system of InAs double quantum dots (QDs) parallel-coupled to source and drain. In the one-electron transport regime, the higher symmetry spin-orbital Kondo effect manifests at orbital degeneracy and no external magnetic field. We then proceed to show that the individual Kondo contributions can be isolated and studied separately; either by orbital detuning in the case of spin-Kondo transport, or by spin splitting in the case of orbital Kondo transport. By varying the inter-dot tunnel coupling, we show that lifting of the spin degeneracy is key to confirming the presence of an orbital degeneracy, and to detecting a small orbital hybridization gap. Finally, in the two-electron regime, we show that the presence of a spin-triplet ground state results in spin-Kondo transport at zero magnetic field., Comment: 8 pages, 6 figures

The thermalization of non-equilibrium charge carriers is at the heart of thermoelectric energy conversion. In nanoscale systems, the equilibration length can be on the order of the system size, leading to a situation where thermoelectric effects need to be considered as spatially distributed, rather than localized at junctions. The energy exchange between charge carriers and phonons is of fundamental scientific and technological interest, but their assessment poses significant experimental challenges. We addressed these challenges by imaging the temperature change induced by Peltier effects in crystal phase engineered InAs nanowire (NW) devices. Using high-resolution scanning thermal microscopy (SThM), we have studied current-carrying InAs NWs, which feature a barrier segment of wurtzite (WZ) of varying length in a NW of otherwise zincblende (ZB) crystal phase. The energy barrier acts as a filter for electron transport around the Fermi energy, giving rise to a thermoelectric effect. We find that thermalization through electron-phonon heat exchange extends over the entire device. We analyze the temperature profile along a nanowire by comparing it to spatially dependent heat diffusion and electron thermalization models. We are able to extract the governing properties of the system, including the electron thermalization length of $223 \pm 9$\,nm, Peltier coefficient and Seebeck coefficient introduced by the barrier of $39 \pm 7$\,mV and $89 \pm 21$\,$\mu$V/K, respectively, and a thermal conductivity along the wire axis of $8.9 \pm 0.5$\,W/m/K. Finally, we compare two ways to extract the elusive thermal boundary conductance between NW and underlying substrate.

Emerging theoretical concepts for quantum technologies have driven a continuous search for structures where a quantum state, such as spin, can be manipulated efficiently. Central to many concepts is the ability to control a system by electric and magnetic fields, relying on strong spin-orbit interaction and a large g-factor. Here, we present a new mechanism for spin and orbital manipulation using small electric and magnetic fields. By hybridizing specific quantum dot states at two points inside InAs nanowires, nearly perfect quantum rings form. Large and highly anisotropic effective g-factors are observed, explained by a strong orbital contribution. Importantly, we find that the orbital and spin-orbital contributions can be efficiently quenched by simply detuning the individual quantum dot levels with an electric field. In this way, we demonstrate not only control of the effective g-factor from 80 to almost 0 for the same charge state, but also electrostatic change of the ground state spin.

Double quantum dots (DQDs) hold great promise as building blocks for quantum technology as they allow for two electronic states to coherently couple. Defining QDs with materials rather than using electrostatic gating allows for QDs with a hard-wall confinement potential and more robust charge and spin states. An unresolved problem is how to individually address these quantum dots, which is necessary for controlling quantum states. We here report the fabrication of double quantum dot devices defined by the conduction band edge offset at the interface of the wurtzite and zinc blende crystal phases of InAs in nanowires. By using sacrifical epitaxial GaSb markers selectively forming on one crystal phase, we are able to precisely align gate electrodes allowing us to probe and control each QD independently. We hence observe textbook-like charge stability diagrams, a discrete energy spectrum and electron numbers consistent with theoretical estimates and investigate the tunability of the devices, finding that changing the electron number can be used to tune the tunnel barrier as expected by simple band diagram arguments., Comment: 5 pages, 3 figures

We use tunneling spectroscopy to study the evolution of few-electron spin states in parallel InAs nanowire double quantum dots (QDs) as a function of level detuning and applied magnetic field. Compared to the much more studied serial configuration, parallel coupling of the QDs to source and drain greatly expands the probing range of excited state transport. Owing to a strong confinement, we can here isolate transport involving only the very first interacting single QD orbital pair. For the (2,0)-(1,1) charge transition, with relevance for spin-based qubits, we investigate the excited (1,1) triplet, and hybridization of the (2,0) and (1,1) singlets. An applied magnetic field splits the (1,1) triplet, and due to spin-orbit induced mixing with the (2,0) singlet, we clearly resolve transport through all triplet states near the avoided singlet-triplet crossings. Transport calculations, based on a simple model with one orbital on each QD, fully replicate the experimental data. Finally, we observe an expected mirrored symmetry between the 1-2 and 2-3 electron transitions resulting from the two-fold spin degeneracy of the orbitals., Comment: 17 pages, 8 figures

We experimentally verify hitherto untested theoretical predictions about the thermoelectric properties of Kondo correlated quantum dots (QDs). The specific conditions required for this study are obtained by using QDs epitaxially grown in nanowires, combined with a recently developed method for controlling and measuring temperature differences at the nanoscale. This makes it possible to obtain data of very high quality both below and above the Kondo temperature, and allows a quantitative comparison with theoretical predictions. Specifically, we verify that Kondo correlations can induce a polarity change of the thermoelectric current, which can be reversed either by increasing the temperature or by applying a magnetic field.

We study spin transport in the one- and two-electron regimes of parallel-coupled double quantum dots (DQDs). The DQDs are formed in InAs nanowires by a combination of crystal-phase engineering and electrostatic gating, with an interdot tunnel coupling ($t$) tunable by one order of magnitude. Large single-particle energy separations (up to 10 meV) and $|g^*|$ factors ($\sim$10) enable detailed studies of the $B$-field-induced transition from a singlet-to-triplet ground state as a function of $t$. In particular, we investigate how the magnitude of the spin-orbit-induced singlet-triplet anticrossing depends on $t$. For cases of strong coupling, we find values of 230 $\mu$eV for the anticrossing using excited-state spectroscopy. Experimental results are reproduced by calculations based on rate equations and a DQD model including a single orbital in each dot., Comment: 5 pages, 4 figures

Cyclical heat engines are a paradigm of classical thermodynamics, but are impractical for miniaturization because they rely on moving parts. A more recent concept is particle-exchange (PE) heat engines, which uses energy filtering to control a thermally driven particle flow between two heat reservoirs. As they do not require moving parts and can be realized in solid-state materials, they are suitable for low-power applications and miniaturization. It was predicted that PE engines could reach the same thermodynamically ideal efficiency limits as those accessible to cyclical engines, but this prediction has not been verified experimentally. Here, we demonstrate a PE heat engine based on a quantum dot (QD) embedded into a semiconductor nanowire. We directly measure the engine's steady-state electric power output and combine it with the calculated electronic heat flow to determine the electronic efficiency $\eta$. We find that at the maximum power conditions, $\eta$ is in agreement with the Curzon-Ahlborn efficiency and that the overall maximum $\eta$ is in excess of 70$\%$ of the Carnot efficiency while maintaining a finite power output. Our results demonstrate that thermoelectric power conversion can, in principle, be achieved close to the thermodynamic limits, with direct relevance for future hot-carrier photovoltaics, on-chip coolers or energy harvesters for quantum technologies.

In the past decade, there has been significant interest in the potentially advantageous thermoelectric properties of one-dimensional (1D) nanowires, but it has been challenging to find high thermoelectric power factors based on 1D effect in practice. Here we point out that there is an upper limit to the thermoelectric power factor of non-ballistic 1D nanowires, as a consequence of the recently established quantum bound of thermoelectric power output. We experimentally test this limit in quasi-ballistic InAs nanowires by extracting the maximum power factor of the first 1D subband through I-V characterization, finding that the measured maximum power factors conform to the theoretical limit. The established limit predicts that a competitive power factor, on the order of mW/m-K^2, can be achieved by a single 1D electronic channel in state-of-the-art semiconductor nanowires with small cross-section and high crystal quality.

Compared to traditional pn-junction photovoltaics, hot carrier solar cells offer potentially higher efficiency by extracting work from the kinetic energy of photogenerated "hot carriers" before they cool to the lattice temperature. Hot carrier solar cells have been demonstrated in high-bandgap ferroelectric insulators and GaAs/AlGaAs heterostructures, but so far not in low-bandgap materials, where the potential efficiency gain is highest. Recently, a high open-circuit voltage was demonstrated in an illuminated wurtzite InAs nanowire with a low bandgap of 0.39 eV, and was interpreted in terms of a photothermoelectric effect. Here, we point out that this device is a hot carrier solar cell and discuss its performance in those terms. In the demonstrated devices, InP heterostructures are used as energy filters in order to thermoelectrically harvest the energy of hot electrons photogenerated in InAs absorber segments. The obtained photovoltage depends on the heterostructure design of the energy filter and is therefore tunable. By using a high-resistance, thermionic barrier an open-circuit voltage is obtained that is in excess of the Shockley-Queisser limit. These results provide generalizable insight into how to realize high voltage hot carrier solar cells in low-bandgap materials, and therefore are a step towards the demonstration of higher efficiency hot carrier solar cells.

We report growth and characterization of a coupled quantum dot structure that utilizes nanowire templates for selective epitaxy of radial heterostructures. The starting point is a zinc blende InAs nanowire with thin segments of wurtzite structure. These segments have dual roles: they act as tunnel barriers for electron transport in the InAs core, and they also locally suppress growth of a GaSb shell, resulting in coaxial InAs-GaSb quantum dots with integrated electrical probes. The parallel quantum dot structure hosts spatially separated electrons and holes that interact due to the type-II broken gap of InAs-GaSb heterojunctions. The Coulomb blockade in the electron and hole transport is studied, and periodic interactions of electrons and holes are observed and can be reproduced by modeling. Distorted Coulomb diamonds indicate voltage-induced ground-state transitions, possibly a result of changes in the spatial distribution of holes in the thin GaSb shell., Comment: 8 pages, 7 figures

We report electrical characterization of quantum dots formed by introducing pairs of thin wurtzite (WZ) segments in zinc blende (ZB) InAs nanowires. Regular Coulomb oscillations are observed over a wide gate voltage span, indicating that WZ segments create significant barriers for electron transport. We find a direct correlation of transport properties with quantum dot length and corresponding growth time of the enclosed ZB segment. The correlation is made possible by using a method to extract lengths of nanowire crystal phase segments directly from scanning electron microscopy images, and with support from transmission electron microscope images of typical nanowires. From experiments on controlled filling of nearly empty dots with electrons, up to the point where Coulomb oscillations can no longer be resolved, we estimate a lower bound for the ZB-WZ conduction-band offset of 95 meV., Comment: 9 pages 9 figures

We report low-temperature transport studies of parallel double quantum dots formed in GaSb/InAsSb core-shell nanowires. At negative gate voltages, regular patterns of Coulomb diamonds are observed in the charge stability diagrams, which we ascribe to single-hole tunneling through a quantum dot in the GaSb core. As the gate voltage increases, the measured charge stability diagram indicates the appearance of an additional quantum dot, which we suggest is an electron quantum dot formed in the InAsSb shell. We find that an electron-hole interaction induces shifts of transport resonances in the source-drain voltage from which an average electron-hole interaction strength of 2.9 meV is extracted. We also carry out magnetotransport measurements of a hole quantum dot in the GaSb core and extract level-dependent g- factors and a spin-orbit interaction., Comment: 26 page, 14 figures

We investigate the transport properties of a new class of ratchets. The device is constructed by applying an ac voltage to the metallic single electron tunneling transistor, and a net transport current is induced by the time-dependent bias-voltage, although the voltage value is on the average zero. The mechanism underlying this phenomenon is the Coulomb blockade of the single electron tunneling. The directions and the values of the induced net currents can be well controlled by the gate-voltage. A net transport current has also been observed even in the absence of the external bias-voltages, which is attributed to the noise in the circuit., Comment: 7 pages, 4 eps-figures