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1. Boosting Pseudocapacitive Behavior of Supercapattery Electrodes by Incorporating a Schottky Junction for Ultrahigh Energy Density

Author

Selvaraj Seenivasan, Kyu In Shim, Chaesung Lim, Thangavel Kavinkumar, Amarnath T. Sivagurunathan, Jeong Woo Han, and Do-Heyoung Kim

Subjects
Pseudo-capacitance, Negative electrode, Supercapattery, Atomic layer deposition, Energy density, Technology
Abstract

Highlights Incorporation of Schottky Junction increases the pseudocapacitive mechanism at higher current rate. The pseudocapacitance behavior of the positive and negative electrodes is balanced to construct a solid-state supercapattery device. An energy density of 236.14 Wh kg−1 is achieved for solid-state supercapattery device.

Published
2023
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