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16 results on '"Thamankar, Ramesh"'

9. Resistive Switching and Hysteresis Phenomena at Nanoscale

Author

Thamankar, Ramesh and Raja, Vithaldas Vallabhdas

Subjects
Science / Physics
Abstract

Resistive switching at the nanoscale is at the heart of the memristor devices technology. These switching devices have emerged as alternative candidates for the existing memory and data storage technologies. Memristors are also considered to be the fourth pillar of classical electronics; extensive research has been carried out for over three decades to understand the physical processes in these devices. Due to their robust characteristics, resistive switching memory devices have been proposed for neuromorphic computation, in-memory computation, and on-chip data storage. In this chapter, the effects of various external stimuli on the characteristics of resistive switching devices are comprehensively reviewed. The emphasis will be given on 2-dimensional (2D) materials, which are exciting systems owing to superior electrical characteristics combined with their high stability at room temperature. These atomically thin 2D materials possess unique electrical, optical and mechanical properties in a broad spectrum, and open the opportunity for developing novel and more efficient electronic devices. Additionally, resistive switching due to light has also grabbed the attention of optoelectronic engineers and scientists for the advancement of optical switches and photo tuned memristors. The variety of material systems used in the fabrication of memristors is comprehensively discussed.

Published
2019

10. Magnetically assembled multiwalled carbon nanotubes on ferromagnetic contacts

Author

Niyogi, Sandip, Myung, Nosang V., Hangarter, Carlos, Haddon, Robert C., Thamankar, Ramesh M., Yueh-Feng Chiang, and Kawakami, Roland

Subjects
Ferromagnetism -- Research, Nanotubes -- Research, Carbon compounds -- Magnetic properties, Chemicals, plastics and rubber industries
Abstract

A method to assemble carbon nanotubes is demonstrated from solution on ferromagnetic contacts using a commercially available permanent magnet. By modifying one end of vertically grown multiwalled carbon nanotubes (MWNTs) with a ferromagnetic material, it is shown that it is possible to direct individual carbon nanotubes with a weak external magnetic field to assemble on ferromagnetic metal electrodes and create ohmic contacts.

Published
2004

15. Performance of ultra-thin HfO2-based MIM devices after oxygen modulation and post-metallization annealing in N2.

Author

Molina, Joel, Thamankar, Ramesh, and Pey, Kin Leong

Subjects
*HAFNIUM oxide, *METAL-insulator-metal structures, *ANNEALING of metals, *ELECTRONIC modulation, *OXYGEN
Abstract

In this work, we discuss the electrical characteristics of metal-insulator-metal (MIM) structures based on ultra-thin hafnium oxides whose stoichiometry have been modified and a thermal treatment after gate metallization has also been applied. Here, we show that the current-voltage characteristics are improved for the annealed samples in terms of lower gate leakage current densities and higher breakdown electric fields. In addition, the role of the modulation in the oxygen concentration for HfO2 on the MIM's current-voltage, capacitance-voltage, and resistive switching characteristics is also addressed. From these data, a trade-off between current-voltage characteristics and basic memory performance is clearly seen, thus highlighting the importance of combining oxygen modulation and/or post-metallization annealing in HfO2-based MIM structures. Finally, the resistive switching effect is shown in the bipolar mode for some MIM structures and the dominant carrier conduction mechanism (just before the SET condition) is also obtained and related to Poole-Frenkel conduction. [ABSTRACT FROM AUTHOR]

Published
2016
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16. Performance of ultra-thin HfO2-based MIM devices after oxygen modulation and post-metallization annealing in N2.

Author

Molina, Joel, Thamankar, Ramesh, and Pey, Kin Leong

Subjects
HAFNIUM oxide, METAL-insulator-metal structures, ANNEALING of metals, ELECTRONIC modulation, OXYGEN
Abstract

In this work, we discuss the electrical characteristics of metal-insulator-metal (MIM) structures based on ultra-thin hafnium oxides whose stoichiometry have been modified and a thermal treatment after gate metallization has also been applied. Here, we show that the current-voltage characteristics are improved for the annealed samples in terms of lower gate leakage current densities and higher breakdown electric fields. In addition, the role of the modulation in the oxygen concentration for HfO2 on the MIM's current-voltage, capacitance-voltage, and resistive switching characteristics is also addressed. From these data, a trade-off between current-voltage characteristics and basic memory performance is clearly seen, thus highlighting the importance of combining oxygen modulation and/or post-metallization annealing in HfO2-based MIM structures. Finally, the resistive switching effect is shown in the bipolar mode for some MIM structures and the dominant carrier conduction mechanism (just before the SET condition) is also obtained and related to Poole-Frenkel conduction. [ABSTRACT FROM AUTHOR]

Published
2016
Full Text
View/download PDF

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