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In the present communication, we have reported the effect of substrate on electrodeposited iron diselenide thin films. The deposited films have been characterized by X-ray diffraction, Energy dispersive analysis by X-rays, Scanning electron microscopy, Ultraviolet Visible Infrared spectroscopic techniques for the determination of structural, morphological, compositional and optical properties. Structural properties indicated that the prepared films possess orthorhombic structure. The parameters such as crystallite size, strain, dislocation density and stacking fault probability are determined for the deposited films. Compositional analysis indicated that the prepared films found to be nearly stoichiometry. The band gap value of the deposited films is in the range between 1.03 and 1.08 eV.

A new type of lithium enriched cathode material Li (Li0.05Ni0.6Fe0.1Mn0.25)O2 was synthesized by sol-gel method with citric acid as a chelating agent. The structural and morphological studies were systematically investigated through X-ray diffraction, SEM with EDS, FT-IR and Raman analyses. The crystallite size of the Li (Li0.05Ni0.6Fe0.1Mn0.25)O2 cathode material was found to be 45 nm thereby leads to the feasible movement of lithium ion all through the material. FT-IR spectroscopy was used to confirm the metal-oxygen interaction in the prepared cathode material. The electrical properties of the Li (Li0.05Ni0.6Fe0.1Mn0.25)O2 cathode material were studied by impedance and dielectric spectral analyzes. Li (Li0.05Ni0.6Fe0.1Mn0.25)O2 showed a maximum ionic conductivity of 10-6 S/cm at ambient temperature.

In this work, we have focused the effect of substrate on electrochemically grown copper oxide and copper sulfide thin films. The prepared films have been subjected to X-ray diffraction, scanning electron microscopy, Energy dispersive X-ray analysis, UV–Visible spectroscopic techniques for the determination crystalline nature, morphology, composition and optical properties. X-ray diffraction results indicated the deposited films exhibited cubic structure with most reflection along (110), (220) planes for copper oxide and copper sulfide. Scanning electron microscopy along with energy dispersive analysis by X-rays showed that films with uniform morphology and nearly stoichiometry have been obtained for film obtained on SnO2 substrate. Optical absorption and transmittance measurements showed that the deposited films exhibited band gap value of 2.28 and 2.45 eV for copper oxide and copper sulfide.

Zinc Oxide and Glucose capped Zinc Oxide nanoparticles have been prepared using modified chemical reaction method. X-ray diffraction analysis showed that the prepared samples possess polycrystalline nature with hexagonal structure. Surface morphology has been analyzed using scanning electron microscopy. The estimated value of band gap was found to be 3.41 and 3.87 eV for Zinc Oxide and Glucose capped ZnO respectively. Fourier Transform Infrared spectroscopic analysis has been carried out to find the chemical bond and elemental composition present in Zinc Oxide and Glucose capped Zinc Oxide.

Pure and 3%, 5%, and 7% molybdenum-doped cadmium oxide (CdO) thin films have been prepared on glass substrates preheated to 400°C using a spray pyrolysis technique, then analyzed using x-ray diffraction analysis, field-emission scanning electron microscopy, ultraviolet–visible spectroscopy, and photoluminescence and Hall measurements. The films were found to have polycrystalline nature with cubic structure. The crystallite size was calculated to be ∼ 12 nm for various doping concentrations. Doping improved the optical transparency of the CdO thin film, with the 5% Mo-doped film recording the highest transmittance in the optical region. The energy bandgap deduced from optical studies ranged from 2.38 eV and 2.44 eV for different Mo doping levels. The electrical conductivity was enhanced on Mo doping, with the highest conductivity of 1.74 × 103 (Ω cm)−1 being achieved for the 5% Mo-doped CdO thin film.

Ni-doped CeO2 thin films were prepared under Ar+ atmosphere on glass substrates using rf magnetron sputtering. To assess the properties of the prepared thin films, the influence of various amounts of Ni dopant on structural, morphological, optical, vibrational, compositional and magnetic properties of the CeO2 films were studied by using X-Ray diffraction (XRD), atomic force microscope (AFM), photoluminescence (PL), micro-Raman, X-ray photoelectron spectroscopy (XPS) and vibrating sample magnetometer (VSM). XRD patterns for all the samples revealed the expected CeO2 cubic fluorite-type structure and Ni ions were uniformly distributed in the samples. AFM images of the prepared samples indicate high dense, columnar structure with uniform distribution of CeO2. Room-temperature photoluminescence (PL) and micro-Raman spectroscopic studies revealed an increase of oxygen vacancies with higher concentration of Ni in CeO2. XPS results confirm the presence of Ni2p, O1s and Ce and depict that cerium is present as both Ce4+ and Ce3+ oxidation states in Ce1−xNixO2 (x = 15%) thin film. Field dependent magnetization measurements revealed a paramagnetic behavior for pure CeO2, while a ferromagnetic behavior appeared when Ni is doped in CeO2 films. Doping dependent magnetization measurements suggest that the observed ferromagnetism is due to the presence of metallic Ni clusters with nanometric size and broad size distribution.

CuO thin films prepared by spray pyrolysis method has wide range of applications. CuO thin films were coated on glass substrate at various temperatures such as 250, 350, 400, and 500 °C by spray pyrolysis. Thin films prepared were characterized by various techniques such as X-ray diffraction, SEM, UV–visible spectroscopy, PL and Hall measurements. XRD diffraction patterns reveal that the films are polycrystalline in nature exhibiting monoclinic structure. The prominent peak corresponds to (200) plane and the corresponding calculated crystallite size varies from 4 to 7 nm. SEM images exhibit grains of uniform size. It is found that the optical absorbance decreases with the increase in temperature and the optical energy band gaps vary from 2.22 to 2.75 eV for various substrate temperatures. Electrical studies done using Hall measurement system show that the copper oxide films are p-type semiconductors with carrier concentration in the order of 1016 cm−3. The electrical resistivity of the copper oxide films obtained was in the range 3.689 × 10−3 to 8.538 × 10−3 Ω cm. Hence, the CuO film is suitable for solar cell applications.

Cobalt-doped cerium dioxide thin films exhibit room temperature ferromagnetism due to high oxygen mobility in doped CeO 2 lattice. CeO 2 is an excellent doping matrix as there is a possibility of it losing oxygen while retaining its structure. This leads to increased oxygen mobility within the fluorite CeO 2 lattice, leading to formation of Ce 3+ and Ce 4+ species. Magnetic ceria materials are important in several applications from magnetic data storage devices to magnetically recoverable catalysts. In this paper, the room temperature ferromagnetism of rf sputtered Co doped CeO 2 thin films is reported whereas undoped CeO 2 thin films exhibit paramagnetic behavior. The ferromagnetic properties of the Co doped films were explained based on oxygen vacancies created by Co ions in Ce sites. This is further supported by X-ray photoelectron spectroscopy (XPS), photoluminescence (PL) and Raman. Change in surface morphology due to Co doping of the samples were analyzed using atomic force microscopy (AFM).

Copper doped tin sulphide (SnS: Cu) thin films have been prepared by the spray pyrolysis technique at the substrate temperature of 350 °C. The optical and electrical properties of the films were studied as a function of copper dopant concentration (up to 10 at.%). The optical measurements showed the energy band gap, refractive index and extinction co-efficient values varied with increase in Cu concentration and the PL spectra showed the strong emission peak around at 765 nm. The film has the lowest resistivity while higher carrier concentration and mobility were obtained at 8 at.% of Cu.

Zn 1− x Ni x O nanoparticles were synthesized by co-precipitation method. The crystallite sizes of the synthesized samples found to decrease from 38 to 26 nm with increase in nickel concentration. FTIR spectra confirmed the presence of Zn O stretching bands at 577, 573, 569 and 565 cm −1 in the respective ZnO NPs. Optical absorption spectra revealed the red shifted and estimated band gap is found to decrease with increase of Ni doping concentration. The PL spectra of all the samples exhibited a broad emission at 390 nm in the visible range. The carriers (donors) bounded on the Ni sites were observed from the micro Raman spectroscopic studies. Pure and Ni doped ZnO NPs showed significant changes in the M–H loop, especially the diamagnetic behavior changed into ferromagnetic nature for Ni doped samples. The antiferromagnetic super-exchange interactions between Ni 2+ ions is increased in higher Ni doped ZnO NPs and also their antibacterial activity has been studied.

In this paper, the structural and magnetic behavior of Ni/Mn co-doped ZnO nanoparticles (NPs) synthesized by co-precipitation method are presented. Powder X-ray diffraction data confirm the formation of a single phase wurtzite type of ZnO structure for all the synthesized Ni, Mn doped and co-doped ZnO nanoparticles. The average crystallite size of NPs is found to be 26–38 nm. FTIR and UV spectroscopic results confirm the incorporation of the dopant into the ZnO lattice structure. Photoluminescence intensity varies with doping due to the increase of oxygen vacancies. Furthermore, M-H curve demonstrates that the Ni/Mn co-doped ZnO NPs possess obvious ferromagnetic characteristics at room temperature. Our study enhances the understanding of the novel performances of transition metal co-doped ZnO NPs and also provides possibilities to fabricate spintronic devices.

Copper tin sulphide nanoparticles have been prepared by solution growth technique at various ethylenediamine concentrations. Prepared samples have been characterized using x-ray diffraction, fourier transform infrared, Raman and scanning electron microscopy techniques. x-ray diffraction results revealed that the prepared samples are nanocrystalline in nature with tetragonal structure. Fourier transform infrared spectroscopy analysis results showed the presence of Cu-O, Sn-O and Sn-S vibrations in the wavenumber range between 450 and 620 cm-1. Vibrational symmetry of prepared samples have been analyzed using Raman spectroscopy. Scanning electron microscopy analysis indicated the formation of flower like nanocrystals for samples prepared at various Ethylenediamine concentrations.

Pure and Al doped CdO thin films were coated on glass substrate at 400 °C by spray pyrolysis method for various aluminium concentrations (3, 5, 10 and 15 wt%). Al doped CdO thin films were characterized by various techniques such as X-ray diffraction, SEM, UV–visible spectroscopy and Hall measurements. XRD diffraction patterns reveal that the films are polycrystalline in nature exhibiting face centered cubic structure. The prominent peak corresponds to (200) plane and the corresponding calculated crystallite size varies from 12 to 18 nm. SEM images show that the films exhibit grains of uniform size which are agglomerated for films with higher dopant concentration. It is found that the optical transmittance decreases with the increase in Al concentration and the optical energy band gaps vary from 2.08 to 2.49 eV for various Al doping concentration levels. Electrical studies done using Hall measurement system exhibit that the undoped and Al doped CdO films are n-type semiconductors with carrier concentration in the order of 1021 cm−3. The electrical resistivity of the Al:CdO films ranges from 4.903 × 10−3 to 9.358 × 10−3 Ω cm.

Tungsten oxide nanostructures were developed on indium tin oxide coated glass substrates by modified thermal evaporation process without using catalyst and vacuum. Depending on the substrate temperature and vapor concentration, different nanostructures like rod, sheet and pyramid were formed. Morphology, phase structure and crystallinity of the nanostructure films were characterized by Scanning electron microscope (SEM), X-ray diffraction (XRD), Raman spectroscopy and HR-TEM. The samples were investigated under dark current and photocurrent and in H2SO4 aqueous solution as a function of applied potential. The saturated photocurrent density of tungsten oxide was found to be ≈14.4 μA cm−2. The films were also investigated as resistive gas sensor for ethanol gases (10–50 ppm) at room temperature. The response and recovery time were also determined.

CeO 2 and Ni–CeO 2 thin films with cubic fluorite structure were prepared by rf magnetron sputtering. Crystallinity and optical properties of the prepared thin films were studied using X-ray diffraction, UV–vis and Photo Luminescence analysis. Vibrational and magnetic properties of the films were analysed through Raman and VSM analyses. The results from XRD and Raman spectroscopy indicate that doped Ni species were dispersed on the ceria surface. Room temperature magnetic measurements reveal paramagnetic nature of pure CeO 2 thin films and ferromagnetic nature with reasonable saturation magnetisation (4.03×10 −5 emu/cm 3 ) of Ni doped CeO 2 thin films. It is believed that the ferromagnetic contributions exhibited in the M–H loops originate from the absorptive oxygen on the surface rather than the oxygen vacancies in the lattice.

The etching process of Porous Silicon has been carried out using an electrochemical oxidation technique. Oxidized samples were immobilized with -Leucine, DL-Iso Leucine and DL-Nor Leucine solutions. Surface morphology and optical properties of the samples have been analyzed using scanning electron microscopy and optical absorption analysis techniques respectively. The bonding characteristics on the surface before and after amino acid deposition have been studied using fourier transform infrared spectroscopy. Photoluminescence spectroscopy was employed to determine the enhancement in wavelength shift of the etched porous silicon.

Highly oriented thin films of Al doped ZnO (Al:ZnO) and Cu co-doped Al:ZnO (Cu/Al:ZnO) thin films were successfully deposited by sol–gel spin coating on glass substrates. The deposited films were characterized using X-ray diffraction analysis and found to exhibit hexagonal wurtzite structure with c-axis orientation. SEM images revealed that hexagonal rod shaped morphologies were grown perpendicular to the substrate surface due to repeated deposition process. High transmittance values were observed for pure ZnO compared to Al:ZnO and Cu/Al:ZnO thin films. The band gap widening is caused by the increase of carrier concentration, which is believed to be due to Burstein-Moss effect due to Al and Cu doping. PL spectra of Cu/Al:ZnO thin films indicate that the UV emission peaks slightly shifted towards lower energy side. XPS study was carried out for Zn0.80Al0.10Cu0.10O thin films to analyze the binding energy of Al, Cu, Zn and O. Magnetic measurement studies exhibited ferromagnetic behavior at room temperature, which may be due to the increase in copper concentration in the doped films. The ferromagnetic behavior can be understood from the exchange coupling between localized ‘d’ spin of Cu ion mediated by free delocalized carriers.

Antimony doped tin disulphide (SnS 2 :Sb) thin films have been prepared by the spray pyrolysis technique atthe substrate temperature of 300 1C. The properties of the films were studied as a function of antimonydopant concentration (up to 10 at%). The XRD analysis revealed that the films were polycrystalline in natureand having hexagonal crystal structure with a preferred orientation along (002) direction. The optical energyband gap values were decreased from 2.50 eV to 2.05 eV with increase in Sb concentration and the PLspectra showed strong emission peak around at 470 nm. The film has the lowest resistivity of1.088 210 Ω cm while higher carrier concentration was obtained at 8 at% of Sb.& 2015 Elsevier B.V. All rights reserved. 1. IntroductionTin disulphide (SnS 2 ) is considered to be one of the most usefulIV–VI group semiconducting tin chalcogenides which has foundapplications in opto-electronic devices, a part of solar collectors,etc. It was first synthesized some 200 years ago [1] and it has morethan 70 polytype structures [2]. It is a layered semiconductor withCdI

Cadmium Sulfide and Ferrous doped Cadmium Sulfide thin films have been prepared on different substrates using an electrodeposition technique. Linear sweep voltammetric analysis has been carried out to determine deposition potential of the prepared films. X-ray diffraction analysis showed that the prepared films possess polycrystalline nature with hexagonal structure. Surface morphology and film composition have been analyzed using Scanning electron microscopy and Energy dispersive analysis by X-rays. Optical absorption analysis showed that the prepared films are found to exhibit Band gap value in the range between 2.3, 2.8 eV for Cadmium Sulfide and Ferrous doped Cadmium Sulfide.

Trivalent neodymium doped ZnO (Zn1−xNdxO, x = 0.0, 0.03, 0.06 and 0.09) nanoparticles (NPs) synthesized by co-precipitation method with improved optical and antibacterial performance is reported. X-ray diffraction pattern indicates most of Nd3+ ions are incorporated in Zn2+ ions of ZnO lattice and hence there is no secondary peak of NdO3 in synthesized ZnO NPs. Fourier transform infrared spectroscopy analysis of synthesized NPs exhibits similar patterns in Zn/Nd–O bands observed at 480 cm−1. High resolution scanning electron microscopy images revealed the formation of spindle like morphology and the incorporation of Nd ions is confirmed by energy dispersive spectra analysis. UV–visible absorption spectra of pure and Nd doped ZnO NPs showed the variation of the band gap in the range of 3.06–2.65 eV. Raman analysis confirmed the formation of wurtzite structure of NPs was distorted due to Nd substitution in ZnO matrix. X-ray photoelectron spectroscopy confirmed the Nd incorporation in the ZnO lattice as Nd3+. The prepared Nd doped ZnO NPs showed potential application in antibacterial activities.

Zinc oxide (ZnO) thin films were deposited by spin coating technique onto glass and fluorine doped tin oxide (FTO) conductive substrates. The effect of the Pedalium Murex (P. Murex) leaf extract on their structural, morphological, lattice dynamic and optical properties was investigated. X-ray diffraction studies revealed that the prepared thin films were polycrystalline. The crystalline size, lattice parameter, position parameters, bond length and texture coefficient were estimated from XRD studies. Morphological variations (cordillera, backbone and tree like structure) were observed for films coated with different quantity of extract. Lattice dynamics and defect studies were investigated using micro Raman spectroscopy, which revealed the presence of oxygen vacancies and zinc interstitial in backbone like structure. The excitation and emission spectra revealed that the optical quality of the ZnO thin films depends on defect concentration and excitation energy. Variations in intensity were observed for violet to green emission with deceasing excitation energy. The transmittance spectra of the prepared thin films were recorded using UV–visible spectroscopy. The film prepared with 0.01 ml extract exhibited low transmittance and band gap compared to other films. J–V curves were recorded for film deposited with 0.01 ml extract using polymer and liquid electrolyte as an electrolyte. The effect of the internal resistance was studied for the film deposited with 0.01 ml extract. The open circuit voltage (Voc), short circuit current density (Isc) and efficiency (η) of the constructed DSSC were determined.

DBSA (Dodecylbenzene sulfonic acid)/PSS (Polystyrene sulfonic acid) doped polypyrrole composites were synthesized by in-situ chemical oxidative polymerization method with 0 to 5°C reaction temperature for 24 h. The particle size distribution of DBSA and PSS doped polypyrrole composites were found at 78 nm, 66 nm, 85 nm, 120 nm and 173 nm for different weight ratios of PSS. The presence of sulfur and higher doping level was confirmed by energy dispersive X-ray analysis. The mass percentages of sulfur were found in 17.94%, 34.41%, 40.87%, 44.9% and 48.16% for various weight ratios of PSS. The SEM study shows the granular morphology and aggregation of polypyrrole composites. Thermal stability improves with higher concentration of PSS. FTIR study confirms the presence of dopants in the composite structure. The UV-study reveals the π→π* transition in benzenoid rings of DBSA and presence of PSS. The conductivity of polypyrrole composite increases maximum upto 2.5 wt% of PSS and then decreases with increasing PSS content.

In this paper, we report the structural, optical and magnetic properties of nano crystalline samples of Zn1−x(TM)xO (TM = Ni, Co and x = 0, 0.05, 0.10 and 0.15) synthesized by co-precipitation method. The synthesized samples were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), photoluminescence (PL), micro-Raman, and vibrating sample magnetometer (VSM). It is observed from XRD patterns that all the samples reveal polycrystalline hexagonal wurtzite structure without any extra phase and average particle size decreased with increasing transition metal (TM) doping concentration. FTIR spectrum has been used to confirm the functional group of Ni–O and Co–O bond. SEM images demonstrated the grain like morphologies of TM doped ZnO nanoparticles (NPs). PL spectra of all samples exhibited a broad emission in the visible range. The carriers (donors) bounded on the TM sites were observed from the micro Raman spectroscopic studies. TM doped ZnO NPs showed significant changes in the M–H loop where the diamagnetic behavior of ZnO changes to ferromagnetic nature when doping with Ni and Co ions.

ZnO nanostructures such as nanoparticles, nanorods, nanotubes and nanoplates were prepared by the novel chemical solution route using different combinations of precursors such as zinc nitrate [Zn(NO3)2·6H2O] and sodium hydroxide [NaOH], zinc nitrate [Zn(NO3)2·6H2O] and hexamethylenetetramine (HMT) (C6H12N4), and zinc acetate [Zn(CH3COO)2·2H2O] and NaOH at low temperature. The effects of temperature and bath concentration for the synthesis of various ZnO nanostructures have been studied. Synthesized powders were characterized by X-ray diffraction, scanning electron microscope and photoluminescence. The crystalline structure, size and shape of the synthesized particles have been analyzed. Energy band gap values and photoluminescence emissions of the nanostructures were found to change according to the kind of the particles. Rod shaped ZnO have been obtained from the combination of zinc nitrate and HMT. The synthesized ZnO nanorods were aligned between lithographically patterned finger type metal contacts and their current–voltage response were measured.

Cerium oxide (CeO2) thin films were prepared by rf magnetron sputtering (PVD) technique onto glass substrates at a pressure of 3 × 10−4 mbar of Ar+ atmosphere. The thickness of deposited CeO2 films ranges from 380 to 590 nm. X-ray diffraction studies on the films showed that the films are polycrystalline in nature. The crystallite size (D), dislocation density (δ) and micro-strain (e) were evaluated from XRD patterns. The obtained micro-strain and dislocation density of the films were found to be ~10−3 and ~1016 lines/m2 respectively, along with a marginal increase in crystallite size from ~6 to ~9 nm. The experimental diffraction values of the films agreed with the standard values. The optical properties of cerium oxide films were studied in the wavelength range 325–900 nm. Optical absorption, extinction coefficients, refractive index and optical conductivity were evaluated from optical measurements. The films are found to be highly transparent in visible region and exhibits low reflectance in the ultraviolet region. The optical band gap of the films was found to decrease from 3.53 to 3.45 eV, with the increase of film thickness. The defects were found to increase with the increase of rf power. Emission bands like UV, weak blue, blue, blue–green and green bands were observed from PL spectra of CeO2 thin films. Raman active mode (F2g) of CeO2 thin films was observed at 466 cm−1 and films deposited at higher rf power show increased line width as well as peak intensity in Raman spectra. Rf power induced formations of flower like morphology were observed in SEM images. The surface roughness of CeO2 thin films was increased from 2.9 to 7.7 nm with the increase of rf power as ascertained from AFM images and the results are discussed.

Room-temperature ferromagnetic behavior of undoped cadmium sulphide (CdS) and Ni-doped CdS thinfilms prepared by chemical bath deposition technique is reported. The crystallite sizes of the thinfilms have been characterized by X-ray diffraction pattern. The particle sizes increase from 11 to 40 nm with the increase of Ni content in the CdS thinfilms. scanning electron microscope results indicated that CdS thinfilms is made up of aggregate of spherical-like particles. The composition was estimated by Energy dispersive analysis of X-ray and reported. Spectroscopic studies revealed considerable improvement in transmission and the band gap of the films decreased from 2.62 to 2.28 eV with addition of Ni dopant that is associated with variation in crystallite sizes in the nano regime. Magnetization measurements indicate that the Ni doped CdS thinfilms exhibited ferromagnetism and the saturation magnetization decreases with the increase of crystal sizes in the Ni doped CdS nano thinfilms. This finding in CdS thinfilms should be focus of the future electronic and spintronics devices.

Tin sulfoselenide (SnSSe) alloy films were electrosyntheized from an aqueous solution by potentiostatic method. SnSSe alloy films were characterized by stylus profilometer, X-ray diffraction (XRD), atomic force microscopy (AFM), photo luminescence and optical absorption techniques. The electrochemical growth reaction kinetics of the alloy formation were discussed. XRD patterns revealed that the deposited films exhibited in polycrystalline orthorhombic structure with preferred orientation along (111) crystallographic plane. Micro structural properties of SnSSe thin films such as crystallite size, dislocation density, micro strain, number of crystallites per unit area, stacking fault probability and texture coefficient were calculated from the predominant (111) diffraction lines. The theoretical route prepared microstructural properties were compared with graphical results. The optical band gap value was calculated from transmittance and absorption data. SnSSe thin film direct transition optical band gap found to be in the range of 1.08–1.25 eV. The ‘x’ value of SnSxSe1−x was estimated from Vegard’s law and it was performed to fit with Gaussian curve fitting. The texture coefficients were calculated for polycrystalline SnSSe diffraction lines. The Lotgering factor were estimated for preferentially oriented diffraction line. The blue emission luminescence peak was observed at 460 nm for SnSSe alloy film. Surface topography and roughness were estimated using AFM micrographs.

International audience; A wireless, battery-free micro-gyroscope was developed by employing a one-port surface acoustic wave (SAW) reflective delay line, a SAW resonator, and an antenna. Two SAW devices with different center frequencies were simultaneously activated by a single antenna with double resonant frequencies. An 80 MHz RF energy from antenna activates a double-port SAW resonator while a 195 MHz RF energy activates a one-port SAW delay line. The fabricated gyroscope showed clear reflection peaks with high signal-to-noise (S/N) ratios in both the time and frequency domains in measurement system during wireless testing. Upon rotation of the device, large shifts of the reflection peaks were observed owing to a secondary wave interference effect caused by the Coriolis force that depends on the spinning rate. The measured sensitivity and linearity of the developed gyroscope were, respectively, 1.35 deg/(deg/s) and 0.91, which are promising values for our targeted applications. The temperature, metal mass effect, and vibration/shock effects were also studied and the results are discussed.

In this work, synthesis of ZnO nanoparticle by solution method and its application in non-volatile memory is reported. Nanocrystalline ZnO particles were prepared by a novel chemical route using the combination of zinc nitrate [Zn (NO3)2 6H2O] and sodium hydroxide [NaOH] at low temperature. The effects of temperature and bath concentration for the synthesis of ZnO powder have been studied. Synthesized powder was characterized by X-ray diffraction (XRD), UV-Vis spectrometer, transmission electron microscopy (TEM) and photoluminescence. Using the prepared ZnO nanoparticles with organic PMMA; non-volatile memory cells were prepared and studied its switching property.

Solid polymer electrolytes of polyethylene oxide (PEO) embedded with LiCF3SO3 was prepared and subjected to X-ray irradiation of different dosages (1.5 to 6 Gy). Ionic conductivity and dielectric studies were made over a frequency range of 100 Hz to 490 KHz. A little increase in ionic conductivity was noted for the sample irradiated for 1.5 Gy and the equivalent circuit remained unaltered for irradiated samples. Remarkable increase in dielectric constant was found for the irradiated samples. It was found that irradiation improved the dissolution of lithium salt and increased the polymer/Lithium interaction and thus improved the polarizability of the electrolyte. The frequency of hopping and liberation of free lithium ions were found altered by irradiation and hence the given dosage was found to have an optimum value in concern with the ionic conductivity of the electrolyte.

A glassy carbon electrode (GCE) was modified with nanosize poly (3-methylthiophene) (P3MT) and used for the sensitive voltammetric determination of diazepam. The cyclic voltammetric response of the bare GCE was compared with the P3MT modified electrode. Electrochemical impedance response of diazepam on modified GCE was studied by various concentrations of diazepam from 0.2 μM to 0.6 μM. The poly (3-methylthiophene) modified glassy carbon electrode (P3MT/GCE) can greatly enhance the peak currents and the detection sensitivity of diazepam under optimal conditions. The quantitative analysis of diazepam was made by the DPSV method. The experimental results showed that the peak current increased with the increase in concentration of diazepam. A calibration was made, which indicated the linear dependence of peak current with concentration (ip = 13.31Conc. + 0.4359R2 = 0.9948) in the range od determination and ot was found to be good between 0.2 and 1.07 μg/L. The limit of detection was 0.1μg/mL. The reproducibility of the stripping signal was realized in terms of relative standard deviation for 6 identical measurements and was found to be 2.6%. The effect of interference of different cations and anions on the oxidation of diazepam was studied. Real sample analysis of diazepam was also studied through DPSV.

Optically transparent l -arginine trifluoroacetate (LATF) single crystals by doping with organic materials urea and thiourea were grown by slow solvent evaporation technique. Powder X-ray diffraction confirms improvement in the crystalline quality for urea doped crystals. Urea doping in LATF also improves the percentage of transmittance. The vibrational frequencies of the grown crystals were assigned by Fourier Transform infrared spectroscopy. The thermal analysis (TG/DTA) indicated the better thermal stability for urea doped LATF crystals. EDAX analysis was carried out to calculate the percentage of elements present in doped and pure LATF. The hardness has been remarkably improved on urea and thiourea doped LATF crystals. The second harmonic generation (SHG) analysis showed 2.5 times than standard KDP for pure LATF and 2.2, 2.07 times than KDP for urea and thiourea doped LATF.

We investigated the structure and magnetic properties of Ce-doped NiO and Co3O4 samples. The multiemission centers created in the nanostructures observed from PL spectra were obviously due to the formation of interstitials (Nii and Coi) and oxygen vacancies (VO) by the incorporation of Ce3+ ions into the lattice site which affects the band gap structure of the material. Room-temperature magnetic study was demonstrated for Ce-doped NiO and Co3O4 nanostructures using a vibrating sample magnetometer. The origin of magnetism in these samples was related to the finite size and importantly oxygen vacancies created by the Ce ion dopant, which was confirmed from the decrease of magnetization value at room temperature compared to undoped NiO and Co3O4 samples.

Electroplated cadmium stannous selenide (Cd x Sn1−x Se) thin films were coated on indium-doped tin oxide (ITO) conducting glass substrates from aqueous bath solutions containing CdCl2, SnCl2, and Na2SeO3. The x value was tuned by change in metal ion source concentration of the electrolytic bath solution. The various x values such as 1, 0.7, 0.45, and 0, of Cd x Sn1−x Se thin films were characterized by structural, morphological, compositional, and optical properties using X-ray diffraction, scanning electron microscopy, energy dispersive analysis by X-rays, and UV-vis-NIR spectrophotometer, respectively. X-ray diffraction (XRD) patterns revealed that the deposited films exhibit polycrystalline nature Cd x Sn1−x Se thin films. The microstructural parameters such as crystallite size, dislocation density, microstrain, and number of crystallites per unit area were calculated and presented. Morphological studies revealed that spherical-shaped grains were observed in cadmium-dominated films and nano-rod-shaped grains were observed in tin-dominated films. Optical properties of CdSnSe films were determined from optical transmittance data in the spectral range 400 to 1,100 nm. The optical direct transition energy band gap was estimated using conventional method, and band gap energy was lying between 1.02 and 1.83 eV. The refractive index, extinction coefficient, and real and imaginary parts of dielectric constants were calculated using optical transmission spectra of Cd x Sn1−x Se thin films.

Pure and transition metal (TM = Ni, Mn, Co) doped zinc oxide (ZnO) thin films were prepared by sol–gel spin coating method with a concentration of 0.03 mol% of transition metals. X-ray diffraction studies revealed the polycrystalline nature of the films with the presence of hexagonal wurtzite structure. UV transmittance spectra showed that all the films are highly transparent in the visible region and in the case of doped ZnO thin films, d–d transition was observed in the violet region due to the existence of crystalline defects and grain boundaries. The optical band gap of the films decreases with increasing orbital occupation numbers of 3d electrons due to the orbital splitting of magnetic ions. Ultraviolet and near-infrared electronic transitions were observed which reveals a strong relationship with the doping of transition metal into ZnO site. The observed luminescence in the green, violet and red regions strongly depends on the doping elements owing to the different oxygen vacancy, oxygen interstitial, and surface morphology. The surface morphology of thin films was investigated by scanning electron microscope (SEM). The energy dispersive X-ray analysis (EDX) confirmed the stoichiometric composition of the TM doped ZnO thin films. Magnetic measurements at room temperature exhibited well defined ferromagnetic features of the thin films.

A spray pyrolysis technique was used to deposit the silver doped tin sulfide (SnS:Ag) thin films on glass substrates at the substrate temperature of 350 °C. The variation in structural, optical and electrical properties of SnS with silver incorporation was investigated. The XRD spectra showed the improvement in crystallinity while increasing the doping concentration of Ag. The lower electrical resistivity of 8.63×10−1 Ω cm and the optical band gap of 1.33 eV were obtained at 8 at% of Ag.

Tin sulphide (SnS) thin films were deposited on glass substrate at different substrate temperature (Ts = 325 °C, 350 °C and 375 °C) by pyrolytic decomposition using stannous chloride and thiourea as precursor solutions. Also, indium-doped SnS thin films were prepared by using InCl3 as dopant source. The dopant concentration [In/Sn] was varied from 2 at% to 6 at%. The XRD analysis revealed that the films were polycrystalline in nature having orthorhombic crystal structure with a preferred grain orientation along (1 1 1) plane. Due to In doping, the orientation of the grains in the (1 1 1) plane was found to be deteriorated. Atomic force microscopy (AFM) measurements revealed that the surface roughness of the films decreased due to indium doping. The optical properties were investigated by measuring the transmittance characteristics which were used to find the optical band gap energy, refractive index and extinction coefficient. The energy band gap value was decreased from 1.60 to 1.43 eV with increasing In concentration. The photoluminescence (PL) measurements of thin films showed strong emission band centered at 760 nm. Using Hall Effect measurements electrical resistivity, carrier concentration and Hall mobility have been determined.

A water-dispersed dodecylbenzene sulfonic acid (DBSA)/poly (styrene sulfonic acid) (PSS)/polypyrrole (PPY) composite was prepared by an in situ chemical polymerization method. The prepared solution was spun on indium tin oxide (ITO) glass plates at different rates of 2000 and 3000 rpm. The optical band gap energy (Eg) was calculated by UV spectroscopy. The band gap of the composite thin films was found at 1.89 eV and 1.93 eV, respectively. A Fourier transform infrared (FTIR) spectrum confirms the presence of dopant and co-dopant in the structure. The diode parameters were calculated from current-voltage (I-V) characteristics and discussed. The I-V characteristics of the devices indicated behavior of a Schottky diode. The ideality factor, barrier height (ϕb) and saturation current were investigated. The ϕb was found to be 0.59 eV and 0.52 eV for 2000 rpm and 3000 rpm, respectively. The ideality factor was calculated from the slope of the linear region of the forward bias in the I-V curves and was found to be 6.4 and 13.5. The results of the present study reveal that the 2000 rpm coated ITO/DBSA/PSS/PPY/Al device showed better nonlinearity behavior than the 3000 rpm one.

In the present study, we have reported on the effect of annealing time variations for spin coated magnesium oxide (MgO) thin films. The various time annealed MgO thin films structural, surface morphological, compositional, electrical and optical absorption properties were studied by X-ray diffraction, scanning electron microscopy, energy dispersive analysis by X-rays, I–V studies and UV–vis spectroscopy, respectively. The cubic structure formation with preferential orientation along the (200) plane was confirmed from structural analysis. In addition, the influence of the annealing on the microstructural properties of MgO was plausibly explained. The optical properties of MgO thin films were estimated using the transmission spectrum in the range of 400–800 nm. The optical band gap energy of MgO thin films was found to be in the range between 3.81 and 3.93 eV. The morphological studies depicted that the spherical and ellipsoid shaped grains were distributed evenly over the entire surface of the film. The sizes of the grains are found to be in the range between 200 and 250 nm. The composition analysis was performed by EDX for various temperatures annealed MgO thin films.

Manganese doped zinc oxide (ZnO) thin films were synthesized for various wt% doping of Mn using sol–gel spin coating technique. The effects of Mn doping on the structural, morphological, compositional, photoluminescence (PL) and magnetic behaviour of ZnO thin films were investigated. Although, Mn doping did not change the lattice constants of the films, the texture coefficient is found to be improved for the films having higher percentage of Mn doping. PL studies reveal that as doping concentration of Mn increases, the intensity of emission peaks corresponding to violet and blue colour increases and the peak position shifts slightly. The saturated magnetic moments are found to decrease with the increase in Mn doping and the reason for such behavior is discussed.

Cobalt Oxide (Co3o4) thin films have been successfully coated onto glass substrates at various solution pH by sol-gel spin coating technique. The film thickness was estimated using weight gain method and it revealed that the film thickness increased with solution pH values. The prepared film structural, morphological, optical and electrical properties were studied using X-ray diffraction (XRD), scanning electron microscope (SEM), UV-Vis-NIR spectrophotometer and Vander Pau method, respectively. The structure of the films were found to be face centered cubic with preferential orientation along (311) plane. X-ray line profile analysis was used to evaluate the micro structural parameters such as crystallite size, micro strain, dislocation density and stacking fault probability. The crystallite size values are increased with increase of solution pH values and maximum value of crystallite is estimated at 40.8 nm at solution pH 8 +/- 0.1. Morphological results showed that the pH of the solution has a marked effect on morphology of the Co3O4 thin films. The optical studies revealed that the band gap can be tailored between 2.16 to 2.31 eV by altering pH. The thin film formed at a solution pH 7 is found to have a low resistivity and high mobility. The electrical resistivity (p), carrier concentration (n) and mobility (micro) values are 0.1 x 10(3) omega x cm, 8.9 cm2 gammas(-1) and 6.6 x 10(14) cm(-3), respectively for Co3O4 thin film prepared at solution pH 7 +/- 0.1. EDAX studies showed that the cobalt content increased and the oxygen content decreased with increase of pH.

The effect of annealing in Ni doped Zinc oxide (ZnO) semiconductor thin films grown by a modified SILAR method is presented in this study. The XRD diffraction patterns reveal good crystalline quality without any appreciable changes from pure ZnO films and are genuinely polycrystalline with a hexagonal wurtzite structure. Scanning electron microscopic (SEM) investigation suggested that both the shape of the crystals and the texture of the films were highly influenced by the SILAR method. The SEM morphology shows the formation of vertical nanorods and interestingly, Ni doped ZnO shows fiber-like structures with good uniformity. These nano thin films are promising candidate for solar cells, photo detectors, and gas sensors.

Thin films of tin sulfide were deposited onto glass substrates by pyrolytic decomposition using stannous chloride and thiourea as precursors. The properties of thin films based on deposition parameters such as substrate temperature ( T s ), molarity of precursor solution ( M ) and spray rates ( R ) were studied. The deposited films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), UV–vis spectroscopy and Hall Effect measurements. The XRD patterns of the films exhibited polycrystalline nature with orthorhombic crystal structure. The crystallite size varied from 30 to 107 nm with the change of deposition parameters. The band gap, electrical resistivity values and the type of conductivity with respect to deposition parameters were also observed.

Titanium dioxide (TiO2) thin films have been deposited on microscopic glass substrate by spray p yrolysis technique. The effect of deposition parameters such as substrate temperature, molarity (precursor concentration) and solution spray rate on the structural, surface morphological and optical properties of the films ha ve been studied. The prepared films were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM) with EDS and UV-Vis spectroscopy. The XRD patterns indicated that the films have amorphous and polycrystalline structure and the size of the crystallite s have been changed from 9 to 48 nm. The optical band gap of the TiO2 films is determined to be about 3.40 to 3.65 eV to the change of deposition co nditions.

Bismuth doped tin sulfide (SnS:Bi) thin films were deposited onto glass substrates by the spray pyrolysis technique at the substrate temperature of 350 °C. The effect of doping concentration [Bi/Sn] on their structural, optical and electrical properties was investigated as a function of bismuth doping between 0 and 8 at%. The XRD results showed that the films were polycrystalline SnS with orthorhombic structure and the crystallites in the films were oriented along (111) direction. Atomic force microscopy revealed that the particle size and surface roughness of the films increased due to Bi-doping. Optical analysis exhibited the band gap value of 1.40 eV for SnS:Bi (6 at%) which was lower than the band gap value for 0 at% of Bi (1.60 eV). The film has low resistivity of 4.788×10−1 Ω-cm and higher carrier concentration of 3.625×1018 cm−3 was obtained at a doping ratio of 6 at%.

This paper reports on the preparation and characterization of Successive Ionic Layer by Adsorption and Reaction (SILAR) grown CuO thin films. The films were deposited onto glass substrates at various solution pH values. The thickness of the film is increased with increase of solution pH values. X-ray diffraction analysis revealed that the prepared films exhibited the monoclinic structure with (−1 1 1) predominant orientation. The optimized pH value is 11 ± 0.1. The microstructure, morphology, optical and electrical properties are studied and reported. The transmission spectra (T) at normal incidence revealed that the films exhibit indirect transitions and may be tailored for passing selected bands of frequencies in visible near IR range. The activation energy is estimated to be about 0.29 eV.

Soluble polypyrrole has been synthesized by In-situ chemical oxidative polymerization method in aqueous solution of pyrrole monomer. The solution contained dodecyl benzene sulfonic acid (DBSA) as a dopant and ammonium persulfate (APS) as an oxidant. The reaction temperature was 20°C for 24 hours. The prepared polypyrrole was dissolved in m-cresol solvent. The solution was coated on glass substrate by spray coating technique at 200°C for 5 minutes. The attachment of sulfonic group is confirmed in the pyrrole structure by FTIR spectroscopy. The absorption of PPy film at 360 nm and 600 nm was confirmed by UV spectroscopy. The emission wavelength of the film was found at 415nm as well as the direct band gap of the polypyrrole was 2.8eV. XRD study shows the crystalline nature of the DBSA doped polypyrrole film. SEM graph reveals globular morphology and the presence of functional acid on PPY film surface. TGA graph shows good thermal stability of the film.

The influence of thermal treatment on the structural and morphological properties of the ZnO films deposited by double dip Successive ionic layer by adsorption reaction is presented. The effect of annealing temperature and time in air ambient is presented in detail. The deposited films were annealed from 200 to 400 degrees C in air and the structural properties were determined as a function of annealing temperature by XRD. The studies revealed that films were exhibiting preferential orientation along (002) plane. The other structural parameters like the crystallite size (D), micro strain (epsilon), dislocation density (delta) and stacking fault (alpha) of as-deposited and annealed ZnO films were evaluated and reported. The optical properties were also studied and the band gap of the ZnO thins films varied from 3.27 to 3.04 eV with the annealing temperature. SEM studies revealed that the hexagonal shaped grains with uniformly distributed morphology in annealed ZnO thin films. It has been envisaged using EDX analysis that the near stoichiometric composition of the film can be attained by thermal treatment during which microstructural changes do occur.