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An ideal two-dimensional (2D) electronic structure is revealed in n-type tetragonal perovskite PbTiO3 through first-principle calculations. This opens exciting prospects for its applications in thermal-to-electrical energy conversion. The electronic structure is regarded as ideally 2D when it is highly dispersive only along two axes, while along the remaining axis, it is nearly non-dispersive with a bandwidth smaller than 1 meV – insignificant when compared to thermal energy above room temperature (i.e., kBT ≥ 25.9 meV). As a basis for comparison, the electronic structure of the cubic perovskite SrTiO3 is calculated. It is nonideal 2D with the bandwidth along the less dispersive axis larger than the thermal energy. The ideal 2D electronic structure in PbTiO3 leads to a 2D-like density of states, resembling a step function around the conduction minimum while for SrTiO3, the density of states remains 3D-like with a square-root energy dependence. Consequently, n-type PbTiO3 exhibits superior effective band degeneracy within the Fermi window compared to SrTiO3, even though PbTiO3 is nondegenerate at the conduction band minimum, while cubic SrTiO3 is three-fold degenerate. This demonstrates the important role of the ideality in the 2D electronic structure. The ab-initio results demonstrate the potential of PbTiO3 as a promising thermoelectric material.

Thermoelectric power can convert heat and electricity directly and reversibly. Low-dimensional thermoelectric materials, particularly thin films, have been considered a breakthrough for separating electronic and thermal transport relationships. In this study, a series of Bi0.5Sb1.5Te3 thin films with thicknesses of 0.125, 0.25, 0.5, and 1 μm have been fabricated by RF sputtering for the study of thickness effects on thermoelectric properties. We demonstrated that microstructure (texture) changes highly correlate with the growth thickness in the films, and equilibrium annealing significantly improves the thermoelectric performance, resulting in a remarkable enhancement in the thermoelectric performance. Consequently, the 0.5 μm thin films achieve an exceptional power factor of 18.1 μWcm−1K−2 at 400 K. Furthermore, we utilize a novel method that involves exfoliating a nanosized film and cutting with a focused ion beam, enabling precise in-plane thermal conductivity measurements through the 3ω method. We obtain the in-plane thermal conductivity as low as 0.3 Wm−1K−1, leading to a maximum ZT of 1.86, nearing room temperature. Our results provide significant insights into advanced thin-film thermoelectric design and fabrication, boosting high-performance systems.

Abstract Bismuth telluride‐based thermoelectric (TE) materials are historically recognized as the best p‐type (ZT = 1.8) TE materials at room temperature. However, the poor performance of n‐type (ZT≈1.0) counterparts seriously reduces the efficiency of the device. Such performance imbalance severely impedes its TE applications either in electrical generation or refrigeration. Here, a strategy to boost n‐type Bi2Te2.7Se0.3 crystals up to ZT = 1.42 near room temperature by a two‐stage process is reported, that is, step 1: stabilizing Seebeck coefficient by CuI doping; step 2: boosting power factor (PF) by synergistically optimizing phonon and carrier transport via thermal‐driven Cu intercalation in the van der Waals (vdW) gaps. Theoretical ab initio calculations disclose that these intercalated Cu atoms act as modulation doping and contribute conduction electrons of wavefunction spatially separated from the Cu atoms themselves, which simultaneously lead to large carrier concentration and high mobility. As a result, an ultra‐high PF ≈63.5 µW cm−1 K−2 at 300 K and a highest average ZT = 1.36 at 300–450 K are realized, which outperform all n‐type bismuth telluride materials ever reported. The work offers a new approach to improving n‐type layered TE materials.

2D electron gas for nanoscale spintronic deviceseditor Calculations reveal the potential for a nanoscale spintronic transistor that works at room temperature. T. H. Wang and H. T. Jeng of Taiwan’s National Tsing Hua University demonstrated through ‘first-principle’ calculations that an ideal two-dimensional electron gas, crucial for semiconductor spintronic applications, can be realized at room temperature in an insulating bismuth selenide ultrathin film grown on a semiconducting molybdenum titelluride substrate. The 2D electron gas formed in the ultrathin device demonstrated large ‘spin-splitting’, a separation between the two states of electron spin, which is needed for transistor-like devices. Spintronic devices use the intrinsic spinning property of electrons to process information instead of the electron charge used in conventional electronics. They could lead to devices that can store more data in a smaller space while consuming less power and using cheaper materials.