Search

Your search keyword '"Tchernycheva, Maria"' showing total 314 results
Start Over Author "Tchernycheva, Maria"
314 results on '"Tchernycheva, Maria"'

1. Lasing of Quantum-Dot Micropillar Lasers under Elevated Temperatures

Author

Babichev, Andrey, Makhov, Ivan, Kryzhanovskaya, Natalia, Blokhin, Alexey, Zadiranov, Yuriy, Salii, Yulia, Kulagina, Marina, Bobrov, Mikhail, Vasiliev, Alexey, Blokhin, Sergey, Maleev, Nikolay, Tchernycheva, Maria, Karachinsky, Leonid, Novikov, Innokenty, and Egorov, Anton

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics, Physics - Optics
Abstract

A comprehensive numerical modelling of microcavity parameters for micropillar lasers with optical pumping was presented. The structure with a hybrid dielectric-semiconductor top mirror has a significantly higher calculated quality-factor (~65000 for 5 $\mu$m pillar) due to better vertical mode confinement. The minimum laser threshold (~370 $\mu$W for 5 $\mu$m pillar) coincided with a temperature of 130 K, which is close to zero gain to cavity detuning. Lasing up to 220 K was demonstrated with a laser threshold of about 2.2 mW.

Published
2024

2. A 5.7 THz GaN/AlGaN quantum cascade detector based on polar step quantum wells

Author

Quach, Patrick, Jollivet, Arnaud, Babichev, Andrey, Isac, Nathalie, Morassi, Martina, Lemaitre, Aristide, Yunin, Pavel, Frayssinet, Eric, de Mierry, Philippe, Jeannin, Mathieu, Bousseksou, Adel, Colombelli, Raffaele, Tchernycheva, Maria, Cordier, Yvon, and Julien, François

Subjects
Physics - Optics, Condensed Matter - Materials Science, Physics - Applied Physics
Abstract

We report on a GaN/AlGaN quantum cascade detector operating in the terahertz spectral range. The device was grown by metal organic chemical vapor deposition on a c-sapphire substrate and relies on polar GaN/AlGaN step quantum wells. The active region thickness is in micrometer range. The structural, electrical and optical investigations attest of high structural quality of the synthetized nitride material. The detector exhibits a peak photocurrent at 5.7 THz (23.6 meV) with a responsivity of 0.1 mA/W at 10 K under surface normal irradiation through a 10 um period grating. The photocurrent persists up to 20 K.

Published
2022
Full Text
View/download PDF

3. Crystal polarity discrimination for GaN nanowires on graphene

Author

Pavlov, Alexander, Mozharov, Alexey, Berdnikov, Yury, Barbier, Camille, Harmand, Jean-Christophe, Tchernycheva, Maria, Polozkov, Roman, and Mukhin, Ivan

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science
Abstract

We present experimental data and computational analysis of the formation of GaN nanowires on graphene virtual substrates. We show that GaN nanowires on graphene exhibit nitrogen polarity. We employ the DFT-based computational analysis to demonstrate that among different possible configurations of Ga and N atoms only the N-polar one is stable. We suggest that polarity discrimination occurs due to the dipole interaction between the GaN nanocrystal and $\pi$-orbitals of the graphene sheet., Comment: 21 pages, 5 figures, J. Mater. Chem. C, 2021

Published
2021
Full Text
View/download PDF

4. Modified silicone rubbers for fabrication and contacting of flexible suspended membranes of n-/p-GaP nanowires with single-walled carbon nanotube transparent contact

Author

Neplokh, Vladimir, Kochetkov, Fedor M., Deriabin, Konstantin V., Fedorov, Vladimir V., Bolshakov, Alexey D., Eliseev, Igor E., Mikhailovskii, Vladimir Yu., Ilatovskii, Daniil A., Krasnikov, Dmitry V., Tchernycheva, Maria, Cirlin, George E., Nasibulin, Albert G., Mukhin, Ivan S., and Islamova, Regina M.

Subjects
Physics - Applied Physics, Condensed Matter - Materials Science, Physics - Chemical Physics
Abstract

This work proposes new chemical and mechanical materials and techniques for III-V semiconductor NW/silicone membrane formation and optoelectronic device fabrication. Molecular beam epitaxy (MBE)-synthesized n-, p- and i-GaP NWs were encapsulated by introduced G-coating method into synthesized polydimethylsiloxane-graft-polystyrene and released from the Si growth substrate. The fabricated membranes were contacted with different materials including single-walled carbon nanotubes or ferrocenyl-containing polymethylhydrosiloxane with and without multi-walled carbon nanotubes doping. The electrical connection of the fabricated membranes was verified by electron beam induced current (EBIC) spectroscopy. The developed methods and materials can be applied for fabrication of high quality flexible inorganic optoelectronic devices., Comment: 25 pages, 17 figures, 1 table

Published
2019

11. UV-A Flexible LEDs Based on Core–Shell GaN/AlGaN Quantum Well Microwires

Author

Amador-Mendez, Nuno, Kochetkov, Fedor M., Hernandez, Roberto, Neplokh, Vladimir, Grenier, Vincent, Finot, Sylvain, Valera, Lucie, Duraz, Jules, Fominykh, Nikita, Parshina, Elizaveta K., Deriabin, Konstantin V., Islamova, Regina M., Herth, Etienne, Bouchoule, Sophie, Julien, François, Abraham, Malini, Das, Subrata, Jacopin, Gwénolé, Krasnikov, Dmitry V., Nasibulin, Albert, Eymery, Joël, Durand, Christophe, Mukhin, Ivan S., and Tchernycheva, Maria

Abstract

Nanostructured ultraviolet (UV) light sources represent a growing research field in view of their potential applications in wearable optoelectronics or medical treatment devices. In this work, we report the demonstration of the first flexible UV-A light emitting diode (LED) based on AlGaN/GaN core–shell microwires. The device is based on a composite microwire/poly(dimethylsiloxane) (PDMS) membrane with flexible transparent electrodes. The electrode transparency in the UV range is optimized: namely, we demonstrate that single-walled carbon nanotube electrodes provide a stable electrical contact to the membrane with high transparency (70% at 350 nm). The flexible UV-A membrane demonstrating electroluminescence around 345 nm is further applied to excite Zn–Ir–BipyPDMS luminophores: the UV-A LED is combined with the elastic luminophore-containing membrane to produce a visible amber emission from 520 to 650 nm. The obtained results pave the way for flexible inorganic light-emitting diodes to be employed in sensing, detection of fluorescent labels, or light therapy.

Published
2024
Full Text
View/download PDF

13. Nanometer Scale Spectral Imaging of Quantum Emitters in Nanowires and Its Correlation to Their Atomically Resolved Structure

Author

Zagonel, Luiz Fernando, Mazzucco, Stefano, Tencé, Marcel, March, Katia, Bernard, Romain, Laslier, Benoît, Jacopin, Gwénolé, Tchernycheva, Maria, Rigutti, Lorenzo, Julien, Francois H., Songmuang, Rudeesun, and Kociak, Mathieu

Subjects
Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

We report the spectral imaging in the UV to visible range with nanometer scale resolution of closely packed GaN/AlN quantum disks in individual nanowires using an improved custom-made cathodoluminescence system. We demonstrate the possibility to measure full spectral features of individual quantum emitters as small as 1 nm and separated from each other by only a few nanometers and the ability to correlate their optical properties to their size, measured with atomic resolution. The direct correlation between the quantum disk size and emission wavelength provides evidence of the quantum confined Stark effect leading to an emission below the bulk GaN band gap for disks thicker than 2.6 nm. With the help of simulations, we show that the internal electric field in the studied quantum disks is smaller than what is expected in the quantum well case. We show evidence of a clear dispersion of the emission wavelengths of different quantum disks of identical size but different positions along the wire. This dispersion is systematically correlated to a change of the diameter of the AlN shell coating the wire and is thus attributed to the related strain variations along the wire. The present work opens the way both to fundamental studies of quantum confinement in closely packed quantum emitters and to characterizations of optoelectronic devices presenting carrier localization on the nanometer scale., Comment: 6 Pages, 4 figures

Published
2012
Full Text
View/download PDF

16. What Triggers Epitaxial Growth of GaN on Graphene?

Author

Barbier, Camille, primary, Largeau, Ludovic, additional, Gogneau, Noëlle, additional, Travers, Laurent, additional, David, Christophe, additional, Madouri, Ali, additional, Tamsaout, Dyhia, additional, Girard, Jean-Christophe, additional, Rodary, Guillemin, additional, Montigaud, Hervé, additional, Durand, Christophe, additional, Tchernycheva, Maria, additional, Glas, Frank, additional, and Harmand, Jean-Christophe, additional

Published
2023
Full Text
View/download PDF

18. InGaN/GaN QWs on tetrahedral structures grown on graphene/SiC

Author

Bosch, Julien, primary, Valera, Lucie, additional, Mastropasqua, Chiara, additional, Michon, Adrien, additional, Nemoz, Maud, additional, Portail, Marc, additional, Zúñiga-Pérez, Jesús, additional, Tchernycheva, Maria, additional, Alloing, Blandine, additional, and Durand, Christophe, additional

Published
2023
Full Text
View/download PDF

27. Porous Nitride Light-Emitting Diodes

Author

Amador-Mendez, Nuño, primary, Mathieu-Pennober, Tiphaine, additional, Vézian, Stéphane, additional, Chauvat, Marie-Pierre, additional, Morales, Magali, additional, Ruterana, Pierre, additional, Babichev, Andrey, additional, Bayle, Fabien, additional, Julien, François H., additional, Bouchoule, Sophie, additional, Collin, Stéphane, additional, Gil, Bernard, additional, Tappy, Nicolas, additional, Fontcuberta i Morral, Anna, additional, Damilano, Benjamin, additional, and Tchernycheva, Maria, additional

Published
2022
Full Text
View/download PDF

28. Polarization-resolved photoluminescence study of an atom probe tip containing a ZnO-(Mg,Zn)O heterostructure

Author

Dalapati, Pradip, primary, Weikum, Eric, additional, Beainy, Georges, additional, Di Russo, Enrico, additional, Houard, Jonathan, additional, Moldovan, Simona, additional, Vella, Angela, additional, Chauveau, Jean Michel, additional, Hugues, Maxime, additional, Le Biavan, Nolwenn, additional, Tchernycheva, Maria, additional, Julien, François H., additional, Saghi, Zineb, additional, and Rigutti, Lorenzo, additional

Published
2022
Full Text
View/download PDF

30. Single GaN nanowire for extremely high current commutation

Author

Shugurov, Konstantin, Mozharov, Alexey, Sapunov, Georgy, Fedorov, Vladimir, Tchernycheva, Maria, Mukhin, Ivan, Tchernycheva, Maria, Alferov university (former St Petersburg Academic university), Khlopina 8/3, 194021, St. Petersburg, Russia, Centre de Nanosciences et de Nanotechnologies (C2N), and Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)

Subjects
power electronics, nanowires, MBE, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Si, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], GaN
Abstract

International audience; An array of GaN nanowires (NWs) on Si substrate are synthesized by molecular beam epitaxy. Measurements of electrical properties at room temperature of single nanowires transferred to an auxiliary substrate demonstrate that current density reaches an extremely high level of 2 MA cm-2 without NW damage. Taking into account the limited conductivity of NW periphery due to electron surface states, i.e. the conduction channel narrowing, the effective current density can reach 3 MA cm-2 .

Published
2021

31. Electromechanical conversion efficiency of GaN NWs: critical influence of the NW stiffness, the Schottky nano-contact and the surface charge effects

Author

Gogneau, Noelle, primary, Chrétien, Pascal, additional, Sodhi, Tanbir, additional, Couraud, Laurent, additional, Leroy, Laetitia, additional, Travers, Laurent, additional, Harmand, Jean-Chistophe, additional, Julien, François H., additional, Tchernycheva, Maria, additional, and Houzé, Frédéric, additional

Published
2022
Full Text
View/download PDF

32. DFT analysis of crystal polarity on graphene surface

Author

Pavlov, Alexander, primary, Mozharov, Alexey, additional, Berdnikov, Yury, additional, Barbier, Camille, additional, Harmand, Jean-Christophe, additional, Tchernycheva, Maria, additional, Polozkov, Roman, additional, and Mukhin, Ivan, additional

Published
2021
Full Text
View/download PDF

33. Red GaPAs/GaP Nanowire-Based Flexible Light-Emitting Diodes

Author

Neplokh, Vladimir, primary, Fedorov, Vladimir, additional, Mozharov, Alexey, additional, Kochetkov, Fedor, additional, Shugurov, Konstantin, additional, Moiseev, Eduard, additional, Amador-Mendez, Nuño, additional, Statsenko, Tatiana, additional, Morozova, Sofia, additional, Krasnikov, Dmitry, additional, Nasibulin, Albert G., additional, Islamova, Regina, additional, Cirlin, George, additional, Tchernycheva, Maria, additional, and Mukhin, Ivan, additional

Published
2021
Full Text
View/download PDF

34. Enriching the Deep-Red Emission in (Mg, Ba)3M2GeO8: Mn4+(M = Al, Ga) Compositions for Light-Emitting Diodes

Author

Kurunthatil Kuttiat, Thejas, Abraham, Malini, Kunti, Arup K., Amador-Mendez, Nuño, Tchernycheva, Maria, and Das, Subrata

Abstract

Red emission from Mn4+-containing oxides inspired the development of high color rendering and cost-effective white-light-emitting diodes (WLEDs). Aiming at this fact, a series of new crystallographic site modified (Mg, Ba)3M2GeO8: Mn4+(M = Al, Ga) compositions were developed with strong deep-red emission in the reaction to UV and blue lights. The Mg3Al2GeO8host is composed of three phases: orthorhombic-Mg3Ga2GeO8, orthorhombic-Mg2GeO4, and cubic-MgAl2O4. However, Mg3Ga2GeO8secured an orthorhombic crystal structure. Interestingly, Mg3Al2GeO8: Mn4+showed a 13-fold more intense emission than Mg3Ga2GeO8: Mn4+since Mn4+occupancy was preferable to [AlO6] sites compared to [GaO6]. The coexisting phases of MgAl2O4and Mg2GeO4in Mg3Al2GeO8: Mn4+contributed to Mn4+luminescence by providing additional [AlO6] and [MgO6] octahedrons for Mn4+occupancy. Further, these sites reduced the natural reduction probability of Mn4+to Mn2+in [AlO4] tetrahedrons, which was confirmed using cathodoluminescence analysis for the first time. A cationic substitution strategy was employed on Mg3M2GeO8: Mn4+to improve the luminescence, and Mg3–xBaxM2GeO8: Mn4+(M = Al, Ga) phosphors were synthesized. Partial substitution of larger Ba2+ions in Mg2+sites caused structural distortions and generated a new Ba impurity phase, which improved the photoluminescence. Compositionally tuned Mg2.73Ba0.27Al1.993GeO8: 0.005Mn4+exhibited a 35-fold higher emission than that of Mg3Ga1.993GeO8: 0.005Mn4+. Additionally, this could retain 70% of its ambient emission intensity at 453 K. A warm WLED with a correlated color temperature (CCT) of 3730 K and a CRI of 89 was fabricated by combining the optimized red component with Y3Al5O12: Ce3+and 410 nm blue LED. By tuning the ratio of blue (BaMgAl10O17: Eu2+), green (Ce0.63Tb0.37MgAl11O19), and red (Mg2.73Ba0.27Al2GeO8: 0.005Mn4+) phosphors, another WLED was developed using a 280 nm UV-LED chip. This showed natural white emission with a CRI of 79 and a CCT of 5306 K. Meanwhile, three red LEDs were also fabricated using the Mg2.73Ba0.27Al1.993GeO8: 0.005Mn4+phosphor with commercial sources. These could be potential pc-LEDs for plant growth applications.

Published
2023
Full Text
View/download PDF

37. Tailoring Morphology and Vertical Yield of Self-Catalyzed GaP Nanowires on Template-Free Si Substrates

Author

Fedorov, Vladimir V., primary, Berdnikov, Yury, additional, Sibirev, Nickolay V., additional, Bolshakov, Alexey D., additional, Fedina, Sergey V., additional, Sapunov, Georgiy A., additional, Dvoretckaia, Liliia N., additional, Cirlin, George, additional, Kirilenko, Demid A., additional, Tchernycheva, Maria, additional, and Mukhin, Ivan S., additional

Published
2021
Full Text
View/download PDF

38. Stretchable Transparent Light-Emitting Diodes Based on InGaN/GaN Quantum Well Microwires and Carbon Nanotube Films

Author

Kochetkov, Fedor M., primary, Neplokh, Vladimir, additional, Mastalieva, Viktoria A., additional, Mukhangali, Sungat, additional, Vorob’ev, Aleksandr A., additional, Uvarov, Aleksandr V., additional, Komissarenko, Filipp E., additional, Mitin, Dmitry M., additional, Kapoor, Akanksha, additional, Eymery, Joel, additional, Amador-Mendez, Nuño, additional, Durand, Christophe, additional, Krasnikov, Dmitry, additional, Nasibulin, Albert G., additional, Tchernycheva, Maria, additional, and Mukhin, Ivan S., additional

Published
2021
Full Text
View/download PDF

44. In Situ X-ray Diffraction Study of GaN Nucleation on Transferred Graphene

Author

Barbier, Camille, Zhou, Tao, Renaud, Gilles, Le Fèvre, Patrick, Glas, Frank, Madouri, Ali, Travers, Laurent, Morassi, Martina, Gogneau, Noëlle, Tchernycheva, Maria, Harmand, Jean-Christophe, Largeau, Ludovic, European Synchrotron Radiation Facility (ESRF), Nanostructures et Rayonnement Synchrotron (NRS ), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Synchrotron SOLEIL (SSOLEIL), Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Saclay, Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), and Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2020

47. Contributors

Author

Afanas’ev, Valery V., primary, Agostini, Giovanni, additional, Baldereschi, Alfonso, additional, Billinge, Simon J.L., additional, Borfecchia, Elisa, additional, Boscherini, F., additional, Božin, Emil S., additional, Buffagni, Elisa, additional, Martinez-Criado, Gema, additional, Detto, Francesca, additional, Fabbri, Filippo, additional, Ferrari, Claudio, additional, Gatti, E., additional, Grillo, Vincenzo, additional, Gurioli, M., additional, Guzzi, M., additional, Juhás, Pavol, additional, Lamberti, Carlo, additional, Lazzarini, Laura, additional, Longo, Alessandro, additional, Manfredotti, Chiara, additional, Margaritondo, G., additional, Mino, Lorenzo, additional, Nasi, Lucia, additional, Favre-Nicolin, Vincent, additional, Peressi, Maria, additional, Portale, Giuseppe, additional, Proietti, M.G., additional, Renaud, Gilles, additional, Renevier, H., additional, Richard, Marie-Ingrid, additional, Rigutti, Lorenzo, additional, Rossi, Francesca, additional, Salviati, Giancarlo, additional, Sanguinetti, S., additional, Schülli, Tobias, additional, Sekiguchi, Takashi, additional, Stesmans, Andre, additional, Tchernycheva, Maria, additional, and Wolverson, Daniel, additional

Published
2013
Full Text
View/download PDF

50. Investigation of the effect of the doping order in GaN nanowire p–n junctions grown by molecular-beam epitaxy

Author

Saket, Omar, primary, Wang, Junkang, additional, Amador-Mendez, Nuño, additional, Morassi, Martina, additional, Kunti, Arup, additional, Bayle, Fabien, additional, Collin, Stéphane, additional, Jollivet, Arnaud, additional, Babichev, Andrey, additional, Sodhi, Tanbir, additional, Harmand, Jean-Christophe, additional, Julien, François H, additional, Gogneau, Noelle, additional, and Tchernycheva, Maria, additional

Published
2020
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results