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Green hydrogen has an audible echo in the clean energy field. In this piece of work, pure and Mo-doped CuO thin films were deposited at different substrate temperatures on the Indium Tin Oxide (ITO) by the DC/RF sputtering technique. The prepared samples were utilized to generate hydrogen gas within the photoelectrochemical water-splitting mechanism. Crystallographic planes (−111), and (200) were the preferred orientations for pure and Mo-doped CuO thin films. Moreover, the average crystallite size was doubled by Mo doping reaching 25.8 nm. FE-SEM microscopic image exhibits that the pure and Mo–CuO thin films have a regular distribution with a small size. The optical band gap has rosed by doping from 1.8 eV to 2.05 eV. Then, it increased to 2.3 eV and 2.4 eV at temperatures of 100 °C and 200 °C respectively. Pure and Mo–CuO thin films were applied as photocathodes for hydrogen generation with water water-splitting technique. The photoelectrochemical application revealed a photocurrent density of ∼2.25 mA/cm2 for Mo-doped CuO photoelectrode at room temperature. This optimum photoelectrode was studied for stability and electrochemical impedance. In addition, the incident photon to current efficiency (IPCE%) was 4.47 % at 500 nm. The applied bias photon to current conversion efficiency (ABPE%) was 4.25 % at −0.38V. As a result of the above, pure and Mo-doped CuO photoelectrodes are low-cost thin films and have a high-efficiency performance for green hydrogen generation industrially. • Mo-doped CuO thin films were carefully sputtered on an ITO substrate at different temperatures. • Effect of doping and temperature on structural and optical properties of CuO thin films has been studied. • The efficiency of Mo-doped CuO photoelectrode at room temperature outperforms the rest. • Photocurrent density ∼2.25 mA/cm2 and (ABPE%) 4.25 % at −0.38V were revealed. • Mo–CuO photoelectrodes have a high level performance for green hydrogen generation. [ABSTRACT FROM AUTHOR]

In this work, cuprous oxide (Cu2O) thin films were prepared using a simplistic sputtering technique. The films were grown on both traditional fluorine-doped tin oxide (FTO) and Ti-metallic substrates. X-ray diffraction applied for investigation of the crystal structure proved that the Cu2O layer acquires the cubic structure with a (111) main peak at 2θ of 36.46°. The optical absorption and transmission were detected through the utilization of a UV-Vis spectrophotometer, and the optical bandgap for the Cu2O layer was determined to be ~2.15 eV using Tauc's equation. XPS and scanning electron microscopy were also performed for chemical structure and morphological investigation, respectively. The optoelectronic behaviors for the prepared samples were carried out using a Keithley source meter; the photocurrent density was measured in a range of applied voltage between −1 and 1 volt under the illumination of a xenon lamp with a power density of 100 mWcm−2. External quantum efficiency, sensitivity, responsivity, and detectivity were computed using proprietary models based on the experimental data. [ABSTRACT FROM AUTHOR]

Cellular mobile technology has witnessed tremendous growth in recent times. One of the challenges facing the operators to extend the coverage of the networks to meet the rising demand for cellular mobile services is the power sources used to supply cellular towers with energy, especially in remote. Thus, switch from the conventional sources of energy to a greener and sustainable power model became a target of the academic and industrial sectors in many fields; one of these important fields is the telecommunication sector. Accordingly, this study aims to find the optimum sizing and techno-economic investigation of a solar photovoltaic scheme to deploy cellular mobile technology infrastructure cleanly and sustainably. The optimal solar-powered system is designed by employing the energy-balance procedures of the HOMER software tool. The problem objective is considered in terms of cost, but the energy system is constrained to meet the power demand reliably. Process simulations were performed to determine the optimum sizing, performance and monetary cost of the power system, using long-term meteorological datasets for a case study site with defined longitude (31° 25' E) and latitude (30° 06' N). From the observed results, the total net present cost (NPC) of the proposed system is $28,187. Indeed, these outcomes can provide profound economic, technical, and ecological benefits to cellular operators. It also ensures a sizeable reduction in greenhouse gas that supports sustainable green wireless network (WN) deployment in remote areas. [ABSTRACT FROM AUTHOR]

Hydrogen atoms inside of an Mg-doped GaN epitaxial layer were effectively removed by the electrochemical potentiostatic activation (EPA) method. The role of hydrogen was investigated in terms of the device performance of light-emitting diodes (LEDs). The effect of the main process parameters for EPA such as solution type, voltage, and time was studied and optimized for application to LED fabrication. In optimized conditions, the light output of 385-nm LEDs was improved by about 26% at 30 mA, which was caused by the reduction of the hydrogen concentration by ∼35%. Further removal of hydrogen seems to be involved in the breaking of Ga-H bonds that passivate the nitrogen vacancies. An EPA process with high voltage breaks not only Mg-H bonds that generate hole carriers but also Ga-H bonds that generate electron carriers, thus causing compensation that impedes the practical increase of hole concentration, regardless of the drastic removal of hydrogen atoms. A decrease in hydrogen concentration affects the current-voltage characteristics, reducing the reverse current by about one order and altering the forward current behavior in the low voltage region. [ABSTRACT FROM AUTHOR]

We investigated the influence of the built-in piezoelectric field induced by compressive stress on the characteristics of GaN-based 450-nm light-emitting diodes (LEDs) prepared on sapphire substrates of different thicknesses. As the sapphire substrate thickness was reduced, the compressive stress in the GaN layer was released, resulting in wafer bowing. The wafer bowing-induced mechanical stress altered the piezoelectric field, which in turn reduced the quantum confined Stark effect in the InGaN/GaN active region of the LED. The flat-band voltage was estimated by measuring the applied bias voltage that induced a 180° phase shift in the electro-reflectance (ER) spectrum. The piezoelectric field estimated by the ER spectra changed by ~110 kV/cm. The electroluminescence spectral peak wavelength was blue-shifted, and the internal quantum efficiency was improved by about 22% at a high injection current of 100 mA. The LED on the 60-lm-thick sapphire substrate exhibited the highest light output power of ~59mW at an injection current of 100 mA, with the operating voltage unchanged. [ABSTRACT FROM AUTHOR]