14 results on '"Tateshita, Yasushi"'
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2. 5.7 A 132dB Single-Exposure-Dynamic-Range CMOS Image Sensor with High Temperature Tolerance
3. Novel Damascene Gate Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated by In situ Arsenic- and Boron-Doped Epitaxy
4. Mobility and Velocity Enhancement Effects of High Uniaxial Stress on Si (100) and (110) Substrates for Short-Channel pFETs
5. Planar Metal–Oxide–Semiconductor Field-Effect Transistors with Raised Source and Drain Extensions Fabricated by In situ Boron-Doped Selective Silicon Epitaxy
6. Channel-Stress Enhancement Characteristics for Scaled pMOSFETs by Using Damascene Gate With Top-Cut Compressive Stress Liner and eSiGe
7. High-Performance Metal/High-$k$ n- and p-MOSFETs With Top-Cut Dual Stress Liners Using Gate-Last Damascene Process on (100) Substrates
8. Threshold Voltage Modulation Technique using Fluorine Treatment through Atomic Layer Deposition TiN Suitable for Complementary Metal–Oxide–Semiconductor Devices
9. Tinv Scaling and Gate Leakage Reduction for n-Type Metal Oxide Semiconductor Field Effect Transistor with HfSix/HfO2 Gate Stack by Interfacial Layer Formation Using Ozone–Water-Last Treatment
10. Novel Asymmetric Raised Source/Drain Extension MOSFET
11. Intercalation of lithium in r.f.-sputtered niobium oxide film as electrode material for lithium-ion batteries
12. Novel Damascene Gate Metal--Oxide--Semiconductor Field-Effect Transistors Fabricated by In situArsenic- and Boron-Doped Epitaxy
13. Effects of Channel Width on Stress Enhancement for Damascene-Gate nFETs With Top-Cut Tensile-Stress Liner.
14. Planar Metal--Oxide--Semiconductor Field-Effect Transistors with Raised Source and Drain Extensions Fabricated by In situBoron-Doped Selective Silicon Epitaxy
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