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Your search keyword '"Tarelkin, Sergey A."' showing total 24 results
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24 results on '"Tarelkin, Sergey A."'

2. Resolving isotope splitting of boron-related intracenter transitions in diamond by infrared absorption spectroscopy

Author

Prikhodko, Dmitrii, Pavlov, Sergey, Tarelkin, Sergey, Bormashov, Vitaly, Kuznetsov, Mikhail, Terentiev, Sergey, Nosukhin, Sergey, Troschiev, Sergey, Hübers, Heinz-Wilhelm, and Blank, Vladimir

Subjects
Condensed Matter - Materials Science, Physics - Optics
Abstract

Isotopic enrichment offers cutting-edge properties of materials opening exciting research and development opportunities. In semiconductors, reached progress of ultimate control in growth and doping techniques follows nowadays the high level isotopic purification. This requires deep understanding of isotopic disorder effects and techniques of their effective determination. Isotopic content of both crystal lattice and impurity centers cause the effects, which can be examined by different optical techniques. While disorder in the host lattice can be straight forward evaluated by inelastic light scattering or by SIMS measurements, determination of isotopic contributions of many orders less presented impurities remains challenging and usually observed in high-resolution photoluminescence or optical absorption spectra. Boron-doped diamonds exhibit complex infrared absorption spectra while boron-related luminescence remains unobserved. Boron, as a most light element acting as a hydrogen-like dopant in elemental semiconductors, has a largest relative difference in its isotope masses, and by this, cause the largest isotopic disorder in semiconductors, including diamond, an elemental semiconductor with the lightest atomic mass of a host lattice. This enables an access to the isotopic constitution of boron in diamond by infrared absorption spectroscopy. By comparison of low-temperature absorption spectra of a natural (20% of 10B and 80% of 11B isotopes) and 11B enriched (up to 99%) doped diamonds we differentiate the intracenter transitions related to 10B and to 11B isotopes. We have found that the isotopic spectral lines of the same boron intracenter transition are separated with the energy of about 0.7 meV. This is the largest impurity isotopic shift ever observed in semiconductors doped by hydrogen-like impurity centers.

Published
2019
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6. The Study of the Efficiency of Nitrogen to Nitrogen‐Vacancy (NV)‐Center Conversion in High‐Nitrogen Content Samples

Author

Bolshedvorskii, Stepan V., primary, Tarelkin, Sergey A., additional, Soshenko, Vladimir V., additional, Cojocaru, Ivan S., additional, Rubinas, Olga R., additional, Sorokin, Vadim N., additional, Vins, Victor G., additional, Smolyaninov, Andrey N., additional, Buga, Sergei G., additional, Galkin, Artem S., additional, Drozdova, Taisiya E., additional, Kuznetsov, Mikhail S., additional, Nosukhin, Sergei A., additional, and Akimov, Alexey V., additional

Published
2023
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8. Electrical properties and deep trap spectra in Ga2O3 films grown by halide vapor phase epitaxy on p-type diamond substrates.

Author

Polyakov, Alexander Y., Nikolaev, Vladimir I., Tarelkin, Sergey A., Pechnikov, Alexei I., Stepanov, Sergey I., Nikolaev, Andrey E., Shchemerov, Ivan V., Yakimov, Eugene B., Luparev, Nikolay V., Kuznetsov, Mikhail S., Vasilev, Anton A., Kochkova, Anastasiya I., Voronova, Marina I., Scheglov, Mikhail P., Kim, Jihyun, and Pearton, Stephen J.

Subjects
DIAMOND crystals, GALLIUM alloys, EPITAXY, SCHOTTKY barrier diodes, CHEMICAL vapor deposition, ELECTRON traps, GASES, PHOTOCURRENTS
Abstract

Films of Ga2O3 were grown by Halide Vapor Phase Epitaxy (HVPE) on bulk heavily B-doped (001)-oriented diamond substrates using thin interlayers of Al2O3 deposited by HVPE or AlN/AlGaN deposited by metalorganic chemical vapor deposition. The growth with AlN/AlGaN was dominated by the formation of a highly conducting ɛ-phase with poor crystalline quality. For these samples, excessive leakage of Schottky diodes and of the Ga2O3/diamond heterojunction prevented meaningful electrical characterization. The film grown with the Al2O3 interlayer was mainly composed of (−201) β-Ga2O3 with an admixture of the ɛ-phase. The film had a low density of residual shallow donors, 5 × 1015 cm−3, with deep electron traps spectra consisting of the well documented centers for β-Ga2O3 near Ec 0.27, Ec 0.7, and Ec 1 eV, all of which are often ascribed to native defects or their complexes. The electrical properties of heterojunctions were mostly determined by the properties of the Ga2O3 films. Both Schottky diodes and heterojunctions showed measurable photosensitivity for 259 nm wavelength excitation, but very low photocurrent for near-UV (365 nm wavelength excitation). [ABSTRACT FROM AUTHOR]

Published
2021
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9. Mid-IR-Sensitive n/p-Junction Fabricated on p-Type Si Surface via Ultrashort Pulse Laser n-Type Hyperdoping and High-Temperature Annealing

Author

Kudryashov, Sergey, primary, Nastulyavichus, Alena, additional, Kirilenko, Demid, additional, Brunkov, Pavel, additional, Shakhmin, Alexander, additional, Rudenko, Andrey, additional, Melnik, Nikolay, additional, Khmelnitskii, Roman, additional, Martovitskii, Victor, additional, Uspenskaya, Mayya, additional, Prikhodko, Dmitry, additional, Tarelkin, Sergey, additional, Galkin, Artem, additional, Drozdova, Taisia, additional, and Ionin, Andrey, additional

Published
2021
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10. High‐Pressure High‐Temperature Single‐Crystal Diamond Type IIa Characterization for Particle Detectors

Author

Chernykh, Sergey V., primary, Chernykh, Alexey V., additional, Tarelkin, Sergey A., additional, Kondakov, Mikhail N., additional, Shcherbachev, Kirill D., additional, Trifonova, Ekaterina V., additional, Drozdova, Taisia E., additional, Troschiev, Sergey Yu., additional, Prikhodko, Dmitry D., additional, Glybin, Yury N., additional, Chubenko, Alexander P., additional, Britvich, Gennady I., additional, Kiselev, Dmitry A., additional, Polushin, Nikolay I., additional, Rabinovich, Oleg I., additional, and Didenko, Sergey I., additional

Published
2020
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12. Spatially controlled fabrication of single NV centers in IIa HPHT diamond

Author

Trofimov, Sergei D., primary, Tarelkin, Sergey A., additional, Bolshedvorskii, Stepan V., additional, Bormashov, Vitaly S., additional, Troshchiev, Sergey Yu., additional, Golovanov, Anton V., additional, Luparev, Nikolai V., additional, Prikhodko, Dmitrii D., additional, Boldyrev, Kirill N., additional, Terentiev, Sergey A., additional, Akimov, Alexey V., additional, Kargin, Nikolay I., additional, Kukin, Nikolay S., additional, Gusev, Alexander S., additional, Shemukhin, Andrey A., additional, Balakshin, Yuri V., additional, Buga, Sergei G., additional, and Blank, Vladimir D., additional

Published
2019
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19. Comparative study of different metals for Schottky barrier diamond betavoltaic power converter by EBIC technique

Author

Tarelkin, Sergey, primary, Bormashov, Vitaly, additional, Korostylev, Eugeniy, additional, Troschiev, Sergey, additional, Teteruk, Dmitry, additional, Golovanov, Anton, additional, Volkov, Alexander, additional, Kornilov, Nikolay, additional, Kuznetsov, Mikhail, additional, Prikhodko, Dmitry, additional, and Buga, Sergei, additional

Published
2016
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21. Photoluminescence enhancement by localized surface plasmons in AlGaN/GaN/AlGaN double heterostructures

Author

Polyakov, Alexander Y., primary, Yun, Jin‐Hyeon, additional, Ahn, Haeng‐Keun, additional, Usikov, Alexander S., additional, Yakimov, Eugene B., additional, Tarelkin, Sergey A., additional, Smirnov, Nikolai B., additional, Shcherbachev, Kirill D., additional, Helava, Heikki, additional, Makarov, Yuri N., additional, Kurin, Sergey Yu, additional, Didenko, Sergey I., additional, Papchenko, Boris P., additional, and Lee, In‐Hwan, additional

Published
2015
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23. Development of nuclear microbattery prototype based on Schottky barrier diamond diodes

Author

Bormashov, Vitaly, primary, Troschiev, Sergey, additional, Volkov, Alexander, additional, Tarelkin, Sergey, additional, Korostylev, Eugeniy, additional, Golovanov, Anton, additional, Kuznetsov, Mikhail, additional, Teteruk, Dmitry, additional, Kornilov, Nikolay, additional, Terentiev, Sergey, additional, Buga, Sergey, additional, and Blank, Vladimir, additional

Published
2015
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24. Ultrawide-Bandgap p-n Heterojunction of Diamond/β-Ga2O3for a Solar-Blind Photodiode

Author

Kim, Hyun, Tarelkin, Sergey, Polyakov, Alexander, Troschiev, Sergey, Nosukhin, Sergey, Kuznetsov, Mikhail, and Kim, Jihyun

Abstract

The potential of ultrawide-bandgap (UWBG) semiconductors has not been fully explored because of the difficulty of forming a p-n homojunction. In this study, a mixed-dimensional UWBG p-n heterojunction composed of a p-type diamond substrate and an n-type exfoliated β-Ga2O3nanolayer has been demonstrated via a van der Waals interaction; this type of structure does not suffer from lattice mismatch. Rectifying current-voltage characteristics with a rectification ratio exceeding 107were obtained with a high reverse hard breakdown voltage of 135 V. This UWBG p-n heterojunction diode exhibited good thermal stability at elevated temperatures, retaining its high rectification ratio and low reverse leakage current. Excellent photoresponse characteristics, including responsivity (12 A W−1), rejection ratio (8.5 × 103), photo-to-dark-current ratio (3900), and fast response/decay characteristics, were observed from the diamond/β-Ga2O3p-n heterojunction photodiode, showing no persistent photoconductivity. The mixed-dimensional p-n heterojunction diode based on two UWBG semiconductors (p-type diamond and n-type β-Ga2O3) can be used as a robust building block in next-generation power electronics and solar-blind optoelectronics.

Published
2020
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