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1. Antiferroelectric negative capacitance from a structural phase transition in zirconia

2. Engineering of ZrO2-based RRAM devices for low power in-memory computing.

6. Implementation of high-performance and high-yield nanoscale hafnium zirconium oxide based ferroelectric tunnel junction devices on 300 mm wafer platform

12. Process-Induced ReRAM Performance Improvement of Atomic Layer Deposited HfO2 for Analog In-Memory Computing Applications

13. Ferroelectric Phase Content in 7 nm Hf(1− x )ZrxO 2 Thin Films Determined by X‐Ray‐Based Methods

14. Quantifying non-centrosymmetric orthorhombic phase fraction in 10 nm ferroelectric Hf0.5Zr0.5O2 films

18. Role of Ge and Si substrates in higher-k tetragonal phase formation and interfacial properties in cyclical atomic layer deposition-anneal Hf1-xZrxO2/Al2O3 thin film stacks.

19. (Invited) Electrical Performance Improvement in 300mm Ge-Based Devices

27. Multilevel Resistive Switching in Hf-Based RRAM

28. Ferroelectric Phase Content in 7 nm Hf(1−x)ZrxO2 Thin Films Determined by X‐Ray‐Based Methods.

29. Multi-technique x-ray and optical characterization of crystalline phase, texture, and electronic structure of atomic layer deposited Hf1-xZrxO2 gate dielectrics deposited by a cyclical deposition and annealing scheme.

31. Bilayer Dielectrics for RRAM Devices

33. Multi-color fly-cut-SAQP for reduced process variation

34. Process-Induced ReRAM Performance Improvement of Atomic Layer Deposited HfO2for Analog In-Memory Computing Applications

35. Atomic layer deposited ultrathin metal nitride barrier layers for ruthenium interconnect applications

44. Effect of Post Plasma Oxidation on Ge Gate Stacks Interface Formation

46. (Invited) Process and Integration of Dielectrics Required for 10nm and Beyond Scaling

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