Search

A new study investigates beryllium implantation induced effects in 6H-SiC pn junctions using deep level transient spectroscopy.

Implantation of Li+ ions at a fluency of 2 times 10 to the 16th power per square centimeter at room temperature leads to generation of carriers in MgIn2O4 thin films and an increase in conductivity. The amount of Li+ ions involved in this process is 20%, which increases to 40% on post-annealing. The plasma oscillation of electron carriers induces two optical absorption bands around 500nm and 1000nm respectively.

The recovery process in Ga ion implanted GaSb crystals was investigated using Raman scattering measurements. The results showed that the threshold fluence to the amorphization for the Ga ion implanted GaSb was substantially lower than that for InP. After furnace annealing treatment, the recovery process in the Ga ion implanted GaSb was very different above and below the fluence.

The first successful synthesis of Ni-based diluted magnetic semiconductors (DMSs) is reported, using the ion implantation method. The case of Co-based DMS is presented, followed by the synthesis of Zn(sub1-x)NixTe. The ion implantation method is shown to be a powerful way of synthesizing DMSs, and the p-d exchange interaction in Zn(sub1-x)NixTi was found to be antiferromagnetic.

Silicon samples H-implanted to a dose of 3×1016 cm-2 were analyzed by positron annihilation and ion backscattering techniques to investigate the growth of H-induced nanocavities at different annealing temperatures (400–900 °C). Positron annihilation lifetime spectroscopy revealed a constant increase in the vacancy cluster size (i.e., nanocavity size) as the annealing temperature increased. On the other hand, Doppler broadening and ion channeling measurements suggested strong interaction between the implanted H and the defects depending on the annealing temperature. Furthermore, Au-gettering experiments revealed that transient gettering sites are formed at 600 °C between the H projected range and the surface. These results indicated that H desorption is one of the key factors in the optimization of the gettering process with H-induced nanocavities. [ABSTRACT FROM AUTHOR]

Beryllium implantation into p-type 6H-SiC and subsequent thermal annealing are performed. Four deep levels labeled BEP1, BEP2, BEP3, and BEP4 were detected in the temperature range 100-500 K.

Presents information on a study that irradiated foil specimens of austenitic stainless steel with argon, krypton and xenon ions. Fluence range of ions; Dependence of the amount of ion-induced phase transformation on irradiation conditions; Amount of phase transformation at saturation.

Presents a study which examined the radiation damage and its recovery process of molecular-beam epitaxy grown AlSb implanted with gallium (Ga) ions using Raman scattering for Ga ion fluences. Details of an experiment on AlSb samples; Depiction of the unpolarized Raman scattering spectrum for the as-grown AlSb layer with an InAs cap layer; Plot of the annealing-temperature variation of the AlSb longitudinal mode.

Submicron room-temperature ferromagnets of MnAs and MnGa have been fabricated on GaAs semiconductor substrates by [Mn.sup.+] ion implantation and subsequent heat treatment at 900 [degrees] C under a controlled atmosphere. MnAs and MnGa particles are formed under nitrogen gas and forming (90%[N.sub.2], 10%[H.sub.2]) gas atmospheres, respectively. Their structural, magneto--optical and magnetic properties are characterized by superconducting quantum interference device magnetometry, magnetic circular dichroism spectroscopy, transmission electron microscopy, and atomic and magnetic force microscopies. The MnAs precipitates grow epitaxially on GaAs substrates and show an in--plane uniaxial magnetic anisotropy. Index Terms--ferromagnetic particles, MnAs, MnGa, semiconductor substrate

Beryllium implantation into p-type 6H-SiC and subsequent thermal annealing have been performed. The deep level defects induced by this beryllium-implantation process have been investigated using deep level transient spectroscopy. Four deep levels labeled BEP1, BEP2, BEP3, and BEP4 were detected in the temperature range 100-500 K. The prominent hole trap BEP1 with an energy level at E[sub V] + 0.41 eV agrees well with the acceptor level of beryllium determined by Hall effect measurements. The remaining hole traps with energy levels at E[sub V] + 0.60 eV, E[sub V] + 0.76 eV, and E[sub V] + 0.88 eV, respectively, are proposed to be beryllium-implantation induced defects or complexes. [ABSTRACT FROM AUTHOR]