48 results on '"Tanjyo, M."'
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2. Comparison of Charge-up Phenomena between Negative- and Positive-Ion Implantations
3. Comparison of BF2, In, Ga, C+Ga & In+BF2 Dopant for 22nm node bulk & PD-SOI HALO implantation or ground plane back-gate doping for FD-SOI CMOS technologies
4. CLARIS G2: Development of Carbon Cluster Implantation
5. Cluster Ion Implantation for Process Application -Carbon Cluster co-Implantation-
6. Scatter Defects and Hall Scattering Factor For The Mobility of Boron In Silicon
7. Cluster Carbon ion implantation for NMOS device fabrication improvements
8. Optimization of implant and anneal processes
9. Carrier activation in cluster boron implanted Si
10. Nissin’s New Cluster Implanter: CLARIS
11. Advantageous Decaborane Ion Implantation for Ultra-shallow Junction of PMOSFETs Compared with Boron Monomer Implantation into Germanium Preamorphized Layer
12. High quality ion implanter; EXCEED3000AH-Nx for 45nm beyond I/I process<Beam Size and Angle>
13. Cluster Ion Implantation for Process Application -Carbon Cluster co-Implantation-.
14. CLARIS G2: Development of Carbon Cluster Implantation.
15. Suppression of phosphorus diffusion using cluster Carbon co-implantation.
16. Improvement of productivity by cluster ion implanter: CLARIS.
17. Comparison of Solid Phase Epi (SPE) non-melt to Liquid Phase Epi (LPE) melt laser annealing for 22nm node n+ USJ formation.
18. Optimization of implant and anneal processes.
19. Effects of cluster carbon implantation at low temperature on damage recovery after rapid thermal annealing.
20. 22nm node n+ SiC stressor using deep PAI+C7H7+P4 with laser annealing.
21. 22nm node p+ junction scaling using B36H44 and laser annealing with or W/O PAI.
22. Ion implantation technology and system for beyond 45nm node devices.
23. Latest Advances In Ion Implantation & Annealing For Gate And Channel (USJ) Doping Optimization.
24. Molecular Dopants and High Mass Dopants for HALO and Extension Implantation.
25. 45nm Node p+ USJ Formation With High Dopant Activation And Low Damage.
26. Versatile medium ion implanter EXCEED2300V
27. Performance of RF plasma flood gun for medium current implanter
28. Low energy implantation technology with decaborane molecular ion beam.
29. Versatile medium ion implanter EXCEED2300V.
30. Performance of RF plasma flood gun for medium current implanter.
31. A low energy plasma flood gun using RF plasma formation.
32. Performance of a plasma flood gun in the medium current ion implanter Exceed200OA.
33. Scatter Defects and Hall Scattering Factor For The Mobility of Boron In Silicon.
34. Cluster Ion Implantation for beyond 45nm node novel device applications.
35. RF ion source for low energy ion implantation - beam profile control of a large-area ion source using 500-MHz discharge
36. Development of an ion source for the low energy ion implantation
37. Quadrupole Stabilization of then=2Rotational Instability of a Field-Reversed Theta-Pinch Plasma
38. A low energy plasma flood gun using RF plasma formation
39. Low energy implantation technology with molecular ion beam
40. Performance of a plasma flood gun in the medium current ion implanter Exceed200OA
41. Advantageous Decaborane Ion Implantation for Ultra-shallow Junction of PMOSFETs Compared with Boron Monomer Implantation into Germanium Preamorphized Layer
42. High quality ion implanter; EXCEED3000AH-Nx for 45nm beyond I/I process
43. Hydrogen free diborane ion source using 500 MHz RF discharge
44. Stress measurement of carbon cluster implanted layers with in-plane diffraction technique.
45. Development of Nissin new boron cluster ion implanter.
46. Low energy implantation technology with molecular ion beam.
47. Hydrogen free diborane ion source using 500 MHz RF discharge.
48. Development of a large-area beam mass analyzer.
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