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3 results on '"Tanina Bradley"'

1. Pre-College Summer Program in Entrepreneurial and Design Thinking Influences STEM Success for African American Students

Author

Caesar R. Jackson, Dawayne Whittington, and Tanina Bradley

Abstract

Sustained innovation and economic strength of the U.S depends on a greater participation of underrepresented minorities in science, technology, engineering, and mathematics (STEM). University-based outreach programs that serve African American and other minority populations should do more to infuse invention education in activities that engage pre-college students from these groups to motivate them to pursue STEM degrees. The Research, Discovery, and Innovation (RDI) Summer Institute is a design and science entrepreneurship program that is offered at North Carolina Central University to high school seniors who have been accepted for admission to a STEM degree program at the university. This study found the RDI Summer Institute program to be effective based on proximal outcomes of gains in composite entrepreneurial thinking skills (entrepreneurial, managerial, engineering design, and technical skills) as perceived by the participants and measured by pre- and post-surveys. Eighty-seven percent of the pre-college participants were African Americans, showed high levels of creativity and innovativeness, and presented product ideas that were conscientious in meeting their community needs. Program impact was assessed based on near-term and distal academic outcomes in college through a rigorously designed quasi-experiment which compared 31 case-control matched pairs of students who had been RDI participants and non-RDI participants. A conditional logistic regression showed first-year retention in STEM degree programs for students who had been RDI participants was five times that of students who had been non-RDI participants. Additionally, first-year STEM retention in differential comparisons favored female students, students from very low/low SES households, and students from single parent households. Also, students who had been RDI participants performed higher in STEM gatekeeper courses, and a strong positive impact of the RDI Summer Institute program was associated with higher STEM persistence even two and three years after pre-college students participated.

Published
2024

2. Investigation of the effects of deposition parameters on indium-free transparent amorphous oxide semiconductor thin-film transistors fabricated at low temperatures for flexible electronic applications

Author

Robert Alston, Tanina Bradley, Shanthi Iyer, Jay Lewis, Eric Forsythe, and Garry Cunningham

Subjects
Materials science, Silicon, business.industry, chemistry.chemical_element, Oxide thin-film transistor, X-ray reflectivity, Semiconductor, chemistry, Thin-film transistor, Optoelectronics, Thin film, Gallium, business, Indium
Abstract

Low temperature gallium tin zinc oxide (GSZO) based thin film transistors fabricated on silicon has been investigated as a potential indium free transparent amorphous oxide semiconductor thin film transistor (TAOS TFT) with potential device applications on plastic substrates. A comprehensive and detailed study on the performance of GSZO TFTs has been carried out by studying the effects of processing parameters such as deposition temperature and annealing temperature/duration, as well as the channel thickness with all temperatures held below 150 °C. Variety of characterization techniques, namely Rutherford backscattering (RBS), x-ray photoelectron spectroscopy (XPS) and x-ray reflectivity (XRR) in addition to I-V and C-V measurements were employed to determine the effects of the above parameters on the composition and quality of the channel. Optimized TFT characteristics of ID=3×10-7 A, ION/OFF =2×106, VON ~ -2 V, SS ~ 1 V/dec and μFE = 0.14 cm2/V· s with a ΔVON of 3.3 V under 3 hours electrical stress were produced.

Published
2014

3. The effects of deposition conditions and annealing temperature on the performance of gallium tin zinc oxide thin film transistors

Author

Robert Alston, Eric Forsythe, Jay Lewis, Shanthi Iyer, Garry Cunningham, Tanina Bradley, and W. J. Collis

Subjects
Materials science, business.industry, Annealing (metallurgy), chemistry.chemical_element, Sputter deposition, Amorphous solid, Indium tin oxide, chemistry, Thin-film transistor, Optoelectronics, Thin film, Gallium, business, Tin
Abstract

In this work the performance of bottom gate thin film transistors (TFTs) with transparent amorphous gallium tin zinc oxide (GSZO) active layers fabricated by radio frequency sputter deposition using a single GSZO target on SiO 2 /Si wafers will be presented. Trap density and its energetic distribution, and oxygen chemisorption were found to play a critical role in determining the operational characteristics of the device, all of which can be controlled by the oxygen incorporation and substrate temperature during deposition, along with the post-deposition annealing. In addition device instability, with respect to the electrical stress and optical illumination, can be suppressed by suitably tailoring these parameters. TFTs exhibiting a drain current (I D ) of 10 -6 A and on/off current ratio (I on/off ) of 10 6 was achieved. A stable TFT has been achieved under electrical stress for 2% oxygen flow exhibiting ΔV T as low as ~0.5 V for 3hr stress under a gate bias of 1.2 and 12 V, with good optical stability.

Published
2013

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