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Thermal transport in nanostructures plays a critical role in modern technologies. As devices shrink, techniques that can measure thermal properties at nanometer and nanosecond scales are increasingly needed to capture transient, out-of-equilibrium phenomena. We present a novel pump-probe photon-electron method within a scanning transmission electron microscope (STEM) to map temperature dynamics with unprecedented spatial and temporal resolutions. By combining focused laser-induced heating and synchronized time-resolved monochromated electron energy loss spectroscopy (EELS), we track phonon, exciton and plasmon signals in various materials, including silicon nitride, aluminum thin film, and transition metal dichalcogenides. Our results demonstrate the technique's ability to follow temperature changes at the nanometer and nanosecond scales. The experimental data closely matched theoretical heat diffusion models, confirming the method's validity. This approach opens new opportunities to investigate transient thermal phenomena in nanoscale materials, offering valuable insights for applications in thermoelectric devices and nanoelectronics.

Flat bands and nontrivial topological physics are two important topics of condensed matter physics. With a unique stacking configuration analogous to the Su-Schrieffer-Heeger (SSH) model, rhombohedral graphite (RG) is a potential candidate for realizing both flat bands and nontrivial topological physics. Here we report experimental evidence of topological flat bands (TFBs) on the surface of bulk RG, which are topologically protected by bulk helical Dirac nodal lines via the bulk-boundary correspondence. Moreover, upon {\it in situ} electron doping, the surface TFBs show a splitting with exotic doping evolution, with an order-of-magnitude increase in the bandwidth of the lower split band, and pinning of the upper band near the Fermi level. These experimental observations together with Hartree-Fock calculations suggest that correlation effects are important in this system. Our results demonstrate RG as a new platform for investigating the rich interplay between nontrivial band topology, correlation effects, and interaction-driven symmetry-broken states., Comment: 15 pages, 5 figures

In recent years, the telecommunications field has experienced an unparalleled proliferation of wireless data traffic. Innovative solutions are imperative to circumvent the inherent limitations of the current technology, in particular in terms of capacity. Carrier frequencies in the sub-terahertz (sub-THz) range (~0.2-0.3 THz) can deliver increased capacity and low attenuation for short-range wireless applications. Here, we demonstrate a direct, passive and compact sub-THz receiver based on graphene, which outperforms state-of-the-art sub-THz receivers. These graphene-based receivers offer a cost-effective, CMOS-compatible, small-footprint solution that can fulfill the size, weight, and power consumption (SWaP) requirements of 6G technologies. We exploit a sub-THz cavity, comprising an antenna and a back mirror, placed in the vicinity of the graphene channel to overcome the low inherent absorption in graphene and the mismatch between the areas of the photoactive region and the incident radiation, which becomes extreme in the sub-THz range. The graphene receivers achieve a multigigabit per second data rate with a maximum distance of ~3 m from the transmitter, a setup-limited 3 dB bandwidth of 40 GHz, and a high responsivity of 0.16 A/W, enabling applications such as chip-to-chip communication and close proximity device-to-device communication., Comment: 13 pages, 4 figures

Semiconducting transition metal dichalcogenides of group VI are well-known for their prominent excitonic effects and the transition from an indirect to a direct band gap when reduced to monolayers. While considerable efforts have elucidated the Rydberg series of excitons in monolayers, understanding their properties in multilayers remains incomplete. In these structures, despite an indirect band gap, momentum-direct excitons largely shape the optical response. In this work, we combine magneto-reflectance experiments with theoretical modeling based on the $\mathbf {k\cdot p}$ approach to investigate the origin of excitonic resonances in WSe$_2$ bi-, tri-, and quadlayers. For all investigated thicknesses, we observe a series of excitonic resonances in the reflectance spectra, initiated by a ground state with an amplitude comparable to the ground state of the 1$s$ exciton in the monolayer. Higher energy states exhibit a decrease in intensity with increasing energy, as expected for the excited states of the Rydberg series, although a significant increase in the diamagnetic shift is missing in tri- and quadlayers. By comparing the experimental observations with theoretical predictions, we discover that the excitonic resonances observed in trilayers originate from two Rydberg series, while quadlayers exhibit four such series, and bilayers host a single Rydberg series similar to that found in monolayers., Comment: 31 pages, 16 figures, published in Phys. Rev. B

Multiply connected electronic networks threaded by flux tubes have been proposed as a platform for adiabatic quantum transport and topological states. Multi-terminal Josephson junction (MTJJ) has been suggested as a pathway to realize this concept. Yet, the manifestations of topology in MTJJ remain open for experimental study. Here, we investigated the artificial topological band structure of three-terminal graphene Josephson junctions. Employing tunnelling spectroscopy and magnetic flux gates, we captured the tomography of the Andreev bound state (ABS) energy spectrum as a function of two independent phase differences. This ABS spectrum exhibits the topological transition from gapped to gapless states, akin to the band structure of nodal-line semimetals. Our results show the potential of graphene-based MTJJs for engineering band topologies in higher dimensions.

Beyond the well-known fermions and bosons, anyons-an exotic class of particles-emerge in the fractional quantum Hall effect and exhibit fractional quantum statistics. Anyons can be categorized by their charge, with extensive research focused on those carrying fractional charge, while charge-neutral anyons in 2D electron liquids remain largely unexplored. Here, we introduce bilayer excitons as a new pathway to realizing charge-neutral anyons. By pairing quasiparticles and quasiholes from Laughlin states, we report bilayer excitons that obey fractional quantum statistics. Through layer-asymmetric field-effect doping, we achieve precise control of the anyon population, stabilizing anyonic dipoles at temperatures below the charge gap. Furthermore, we investigate neutral anyons in even-denominator FQHE states, which are likely described by non-Abelian wavefunctions. These findings open the door to exploring non-Abelian statistics in neutral anyons, with the potential to reshape future research in topological quantum phases., Comment: 9 pages for main text, 4 main figures, total of 16 pages, total of 6 figures

Moir\'e superlattice of twisted hexagonal boron nitride (hBN) has emerged as an advanced atomically thin van der Waals interfacial ferroelectricity platform. Nanoscale periodic ferroelectric moir\'e domains with out-of-plane potentials in twisted hBN allow the hosting of remote Coulomb superlattice potentials to adjacent two-dimensional materials for tailoring strongly correlated properties. Therefore, the new strategies for engineering moir\'e length, angle, and potential strength are essential for developing programmable quantum materials and advanced twistronics applications devices. Here, we demonstrate the realization of twisted hBN-based moir\'e superlattice platforms and visualize the moir\'e domains and ferroelectric properties using Kelvin probe force microscopy. Also, we report the KPFM result of regular moir\'e superlattice in the large area. It offers the possibility to reproduce uniform moir\'e structures with precise control piezo stage stacking and heat annealing. We demonstrate the high tunability of twisted hBN moir\'e platforms and achieve cumulative multi-ferroelectric polarization and multi-level domains with multiple angle mismatched interfaces. Additionally, we observe the quasi-1D anisotropic moir\'e domains and show the highest resolution analysis of the local built-in strain between adjacent hBN layers compared to the conventional methods. Furthermore, we demonstrate in-situ manipulation of moir\'e superlattice potential strength using femtosecond pulse laser irradiation, which results in the optical phonon-induced atomic displacement at the hBN moir\'e interfaces. Our results pave the way to develop precisely programmable moir\'e superlattice platforms and investigate strongly correlated physics in van der Waals heterostructures., Comment: 26 pages, 4 figures

Single photon detectors (SPDs) are essential technology in quantum science, quantum network, biology, and advanced imaging. To detect the small quantum of energy carried in a photon, conventional SPDs rely on energy excitation across either a semiconductor bandgap or superconducting gap. While the energy gap suppresses the false-positive error, it also sets an energy scale that can limit the detection efficiency of lower energy photons and spectral bandwidth of the SPD. Here, we demonstrate an orthogonal approach to detect single near-infrared photons using graphene calorimeters. By exploiting the extremely low heat capacity of the pseudo-relativistic electrons in graphene near its charge neutrality point, we observe an electron temperature rise up to ~2 K using a hybrid Josephson junction. In this proof-of-principle experiment, we achieve an intrinsic quantum efficiency of 87% (75%) with dark count < 1 per second (per hour) at operation temperatures as high as 1.2 K. Our results highlight the potential of electron calorimetric SPDs for detecting lower-energy photons from the mid-IR to microwave regimes, opening pathways to study space science in far-infrared regime, to search for dark matter axions, and to advance quantum technologies across a broader electromagnetic spectrum.

Electrons in solids owe their properties to the periodic potential landscapes they experience. The advent of moir\'e lattices has revolutionized our ability to engineer such landscapes on nanometer scales, leading to numerous groundbreaking discoveries. Despite this progress, direct imaging of these electrostatic potential landscapes remains elusive. In this work, we introduce the Atomic Single Electron Transistor (SET), a novel scanning probe utilizing a single atomic defect in a van der Waals (vdW) material, which serves as an ultrasensitive, high-resolution potential imaging sensor. Built upon the quantum twisting microscope (QTM) platform, this probe leverages the QTM's distinctive capability to form a pristine, scannable 2D interface between vdW heterostructures. Using the Atomic SET, we present the first direct images of the electrostatic potential in one of the most canonical moir\'e interfaces: graphene aligned to hexagonal boron nitride. Our results reveal that this potential exhibits an approximate C6 symmetry, has minimal dependence on the carrier density, and has a substantial magnitude of ~60 mV even in the absence of carriers. Theoretically, the observed symmetry can only be explained by a delicate interplay of physical mechanisms with competing symmetries. Intriguingly, the magnitude of the measured potential significantly exceeds theoretical predictions, suggesting that current understanding may be incomplete. With a spatial resolution of 1 nm and a sensitivity to detect the potential of even a few millionths of an electron charge, the Atomic SET opens the door for ultrasensitive imaging of charge order and thermodynamic properties for a range of quantum phenomena, including various symmetry-broken phases, quantum crystals, vortex charges, and fractionalized quasiparticles.

Two-dimensional (2D) van der Waals (vdW) magnets with layer-dependent magnetic states and/or diverse magnetic interactions and anisotropies have attracted extensive research interest. Despite the advances, a notable challenge persists in effectively manipulating the tunneling anisotropic magnetoresistance (TAMR) of 2D vdW magnet-based magnetic tunnel junctions (MTJs). Here, we report the novel and anomalous tunneling magnetoresistance (TMR) oscillations and pioneering demonstration of bias and gate voltage controllable TAMR in 2D vdw MTJs, utilizing few-layer CrPS4. This material, inherently an antiferromagnet, transitions to a canted magnetic order upon application of external magnetic fields. Through TMR measurements, we unveil the novel, layer-dependent oscillations in the tunneling resistance for few-layer CrPS4 devices under both out-of-plane and in-plane magnetic fields, with a pronounced controllability via gate voltage. Intriguingly, we demonstrate that both the polarity and magnitude of TAMR in CrPS4 can be effectively tuned through either a bias or gate voltage. We further elucidate the mechanism behind this electrically tunable TAMR through first-principles calculations. The implications of our findings are far-reaching, providing new insights into 2D magnetism and opening avenues for the development of innovative spintronic devices based on 2D vdW magnets., Comment: 22 pages, 4 figures

Effective control of magnetic phases in two-dimensional magnets would constitute crucial progress in spintronics, holding great potential for future computing technologies. Here, we report a new approach of leveraging tunneling current as a tool for controlling spin states in CrI3. We reveal that a tunneling current can deterministically switch between spin-parallel and spin-antiparallel states in few-layer CrI3, depending on the polarity and amplitude of the current. We propose a mechanism involving nonequilibrium spin accumulation in the graphene electrodes in contact with the CrI3 layers. We further demonstrate tunneling current-tunable stochastic switching between multiple spin states of the CrI3 tunnel devices, which goes beyond conventional bi-stable stochastic magnetic tunnel junctions and has not been documented in two-dimensional magnets. Our findings not only address the existing knowledge gap concerning the influence of tunneling currents in controlling the magnetism in two-dimensional magnets, but also unlock possibilities for energy-efficient probabilistic and neuromorphic computing., Comment: 23 pages, 4 figures

Magnetoresistance (MR) oscillations serve as a hallmark of intrinsic quantum behavior, traditionally observed only in conducting systems. Here we report the discovery of MR oscillations in an insulating system, the vertical junctions of CrPS$_4$ which is a two dimensional (2D) A-type antiferromagnetic semiconductor. Systematic investigations of MR peaks under varying conditions, including electrode materials, magnetic field direction, temperature, voltage bias and layer number, elucidate a correlation between MR oscillations and spin-canted states in CrPS$_4$. Experimental data and analysis point out the important role of the in-gap electronic states in generating MR oscillations, and we proposed that spin selected interlayer hopping of localized states may be responsible for it. Our findings not only illuminate the unusual electronic transport in CrPS$_4$ but also underscore the potential of van der Waals magnets for exploring interesting phenomena.

Coherent quantum emitters are a central resource for advanced quantum technologies. Hexagonal boron nitride (hBN) hosts a range of quantum emitters that can be engineered using techniques such as high-temperature annealing, optical doping, and irradiation with electrons or ions. Here, we demonstrate that such processes can degrade the coherence, and hence the functionality, of quantum emitters in hBN. Specifically, we show that hBN annealing and doping methods that are used routinely in hBN nanofabrication protocols give rise to decoherence of B-center quantum emitters. The decoherence is characterized in detail, and attributed to defects that act as charge traps which fluctuate electrostatically during SPE excitation and induce spectral diffusion. The decoherence is minimal when the emitters are engineered by electron beam irradiation of as-grown, pristine flakes of hBN, where B-center linewidths approach the lifetime limit needed for quantum applications involving interference and entanglement. Our work highlights the critical importance of crystal lattice quality to achieving coherent quantum emitters in hBN, despite the common perception that the hBN lattice and hBN SPEs are highly-stable and resilient against chemical and thermal degradation. It underscores the need for nanofabrication techniques that are minimally invasive and avoid crystal damage when engineering hBN SPEs and devices for quantum-coherent technologies.

In twisted van der Waals materials, local atomic relaxation can significantly alter the underlying electronic structure and properties. Characterizing the lattice reconstruction and the impact of strain is essential to better understand and harness the resulting emergent electronic states. Here, we use a scanning single-electron transistor to image spatial modulations in the electronic structure of helical trilayer graphene, demonstrating relaxation into a superstructure of large domains with uniform moire periodicity. We further show that the supermoire domain size is enhanced by strain and can even be altered in subsequent measurements of the same device, while nevertheless maintaining the same local electronic properties within each domain. Finally, we observe higher conductance at the boundaries between domains, consistent with the prediction that they host counter-propagating topological edge modes. Our work confirms that lattice relaxation can produce moire-periodic order in twisted multilayers, demonstrates strain-engineering as a viable path for designing topological networks at the supermoire scale, and paves the way to direct imaging of correlation-driven topological phases and boundary modes.

Quantum Hall phases have recently emerged as a platform to investigate non-Hermitian topology in condensed-matter systems. This platform is particularly interesting due to its tunability, which allows to modify the properties and topology of the investigated non-Hermitian phases by tuning external parameters of the system such as the magnetic field. Here, we show the tunability of non-Hermitian topology chirality in a graphene heterostructure using a gate voltage. By changing the charge carrier density, we unveil some novel properties specific to different quantum Hall regimes. First, we find that the best quantization of the non-Hermitian topological invariant is interestingly obtained at very high filling factor rather than on well-quantized quantum Hall plateaus. This is of particular importance for the efficient operation of devices based on non-Hermitian topology. Moreover, we observe an additional non-Hermitian topological phase in the insulating nu=0 quantum Hall plateau, which survives at lower fields than the opening of the nu=0 gap, confirming a recent prediction of a disorder-induced trivial phase. Our results evidence graphene as a promising platform for the study of non-Hermitian physics and of emergent phases in such topological devices.

Crystal defects in hexagonal boron nitride (hBN) are emerging as versatile nanoscale optical probes with a wide application profile, spanning the fields of nanophotonics, biosensing, bioimaging and quantum information processing. However, generating these crystal defects as reliable optical emitters remains challenging due to the need for deterministic defect placement and precise control of the emission area. Here, we demonstrate an approach that integrates microspheres (MS) with hBN optical probes to enhance both defect generation and optical signal readout. This technique harnesses MS to amplify light-matter interactions at the nanoscale through 2 two mechanisms: focused femtosecond (fs) laser irradiation into a photonic nanojet for highly localized defect generation, and enhanced light collection via the whispering gallery mode effect. Our MS-assisted defect generation method reduces the emission area by a factor of 5 and increases the fluorescence collection efficiency by approximately 10 times compared to MS-free samples. These advancements in defect generation precision and signal collection efficiency open new possibilities for optical emitter manipulation in hBN, with potential applications in quantum technologies and nanoscale sensing., Comment: 28 pages, 5 figures

Stacking monolayers of transition metal dichalcogenides (TMDs) has led to the discovery of a plethora of new exotic phenomena, resulting from moir\'e pattern formation. Due to the atomic thickness and high surface-to-volume ratio of heterostructures, the interfaces play a crucial role. Fluctuations in the interlayer distance affect interlayer coupling and moir\'e effects. Therefore, to access the intrinsic properties of the TMD stack, it is essential to obtain a clean and uniform interface between the layers. Here, we show that this is achieved by ironing with the tip of an atomic force microscope. This post-stacking procedure dramatically improves the homogeneity of the interfaces, which is reflected in the optical response of the interlayer exciton. We demonstrate that ironing improves the layer coupling, enhancing moir\'e effects and reducing disorder. This is crucial for the investigation of TMD heterostructure physics, which currently suffers from low reproducibility.

Integrated photodetectors are crucial for their high speed, sensitivity, and efficient power consumption. In these devices, photocurrent generation is primarily attributed to the photovoltaic (PV) effect, driven by electron hole separations, and the photothermoelectric (PTE) effect, which results from temperature gradients via the Seebeck effect. As devices shrink, the overlap of these mechanisms-both dependent on the Fermi level and band structure-complicates their separate evaluation at the nanoscale. This study introduces a novel 3D photocurrent nano-imaging technique specifically designed to distinctly map these mechanisms in a Schottky barrier photodiode featuring a molybdenum disulfide and gold (MoS2 Au) interface. We uncover a significant PTE-dominated region extending several hundred nanometers from the electrode edge, a characteristic facilitated by the weak electrostatic forces typical in 2D materials. Unexpectedly, we find that incorporating hexagonal boron nitride (hBN), known for its high thermal conductivity, markedly enhances the PTE response. This counterintuitive enhancement stems from an optimal overlap between thermal and Seebeck profiles, presenting a new pathway to boost device performance. Our findings highlight the capability of this imaging technique to not only advance optoelectronic applications but also to deepen our understanding of light matter interactions within low-dimensional systems.

Semiconducting transitional metal dichalcogenides (TMDCs) moir\'e superlattice provides an exciting platform for manipulating excitons. The in-situ control of moir\'e potential confined exciton would usher in unprecedented functions of excitonic devices but remains challenging. Meanwhile, as a dipolar composite boson, interlayer exciton in the type-II aligned TMDC moir\'e superlattice strongly interacts with fermionic charge carriers. Here, we demonstrate active manipulation of the exciton diffusivity by tuning their interplay with correlated carriers in moir\'e potentials. At fractional fillings where carriers are known to form generalized Wigner crystals, we observed suppressed diffusivity of exciton. In contrast, in Fermi liquid states where carriers dynamically populate all moir\'e traps, the repulsive carrier-exciton interaction can effectively reduce the moir\'e potential confinement seen by the exciton, leading to enhanced diffusivity with the increase of the carrier density. Notably, the exciton diffusivity is enhanced by orders of magnitude near the Mott insulator state, and the enhancement is much more pronounced for the 0-degree than the 60-degree aligned WS2/WSe2 heterobilayer due to the more localized nature of interlayer excitons. Our study inspires further engineering and controlling exotic excitonic states in TMDC moir\'e superlattices for fascinating quantum phenomena and novel excitonic devices.

Monolayer transition metal dichalcogenides have emerged as prominent candidates to explore the complex interplay between the spin and the valleys degrees of freedom. The strong spin-orbit interaction and broken inversion symmetry within these materials lead to the spin-valley locking effect, in which carriers occupying the K and K' valleys of the reciprocal space must have opposite spin depending on which valley they reside. This effect is particularly strong for holes due to a larger spin-orbit gap in the valence band. By reducing the dimensionality of a monolayer of tungsten diselenide to 1D via electrostatic confinement, we demonstrate that spin-valley locking in combination with strong hole-hole interactions lead to a ferromagnetic state in which hole transport through the 1D system is spin-valley polarized, even without an applied magnetic field, and that the persistence of this spin-valley polarized configuration can be tuned by a global back-gate. This observation opens the possibility of implementing a robust and stable valley polarized system, essential for valleytronic applications.

Charge distribution offers a unique fingerprint of important properties of electronic systems, including dielectric response, charge ordering and charge fractionalization. We develop a new architecture for charge sensing in two-dimensional electronic systems in a strong magnetic field. We probe local change of the chemical potential in a proximitized detector layer using scanning tunneling microscopy (STS), allowing us to infer the chemical potential and the charge profile in the sample. Our technique has both high energy (<0.3 meV) and spatial (<10 nm) resolution exceeding that of previous studies by an order of magnitude. We apply our technique to study the chemical potential of quantum Hall liquids in monolayer graphene under high magnetic fields and their responses to charge impurities. The chemical potential measurement provides a local probe of the thermodynamic gap of quantum Hall ferromagnets and fractional quantum Hall states. The screening charge profile reveals spatially oscillatory response of the quantum Hall liquids to charge impurities, and is consistent with the composite Fermi liquid picture close to the half-filling. Our technique also paves the way to map moir\'e potentials, probe Wigner crystals, and investigate fractional charges in quantum Hall and Chern insulators.

Coulomb drag between adjacent electron and hole gases has attracted considerable attention, being studied in various two-dimensional systems, including semiconductor and graphene heterostructures. Here we report measurements of electron-hole drag in the Planckian plasma that develops in monolayer graphene in the vicinity of its Dirac point above liquid-nitrogen temperatures. The frequent electron-hole scattering forces minority carriers to move against the applied electric field due to the drag induced by majority carriers. This unidirectional transport of electrons and holes results in nominally negative mobility for the minority carriers. The electron-hole drag is found to be strongest near-room temperature, despite being notably affected by phonon scattering. Our findings provide better understanding of the transport properties of charge-neutral graphene, reveal limits on its hydrodynamic description and also offer insight into quantum-critical systems in general.

Quantum gases consisting of species with distinct quantum statistics, such as Bose-Fermi mixtures, can behave in a fundamentally different way than their unmixed constituents. This makes them an essential platform for studying emergent quantum many-body phenomena such as mediated interactions and unconventional pairing. Here, we realize an equilibrium Bose-Fermi mixture in a bilayer electron system implemented in a WS$_{2}$/WSe$_{2}$ moir\'e heterobilayer with strong Coulomb coupling to a nearby moir\'e-free WSe$_{2}$ monolayer. Absent the fermionic component, the underlying bosonic phase manifests as a dipolar excitonic insulator. By injecting excess charges into it, we show that the bosonic phase forms a stable mixture with added electrons but abruptly collapses upon hole doping. We develop a microscopic model to explain the unusual asymmetric stability with respect to electron and hole doping. By studying the Bose-Fermi mixture via monitoring excitonic resonances from both layers, we demonstrate gate-tunability over a wide range in the boson/fermion density phase space, in excellent agreement with theoretical calculations. Our results further the understanding of phases stabilized in moir\'e bilayer electron systems and demonstrate their potential for exploring the exotic properties of equilibrium Bose-Fermi mixtures., Comment: 13 pages, 4 figures. Extended Data: 6 figures. We welcome your feedback!

Two-dimensional heterostructures have been crucial in advancing optoelectronic devices utilizing van der Waals materials. Semiconducting transition metal dichalcogenide monolayers, known for their unique optical properties, offer extensive possibilities for light-emitting devices. Recently, a memory-driven optical device, termed a Mem-emitter, was proposed using these monolayers atop dielectric substrates. The successful realization of such devices heavily depends on selecting the optimal substrate. Here, we report a pronounced memory effect in a MoSe$_2$/clinochlore device, evidenced by electric hysteresis in the intensity and energy of MoSe$_2$ monolayer emissions. This demonstrates both population-driven and transition-rate-driven Mem-emitter abilities. Our theoretical approach correlates these memory effects with internal state variables of the substrate, emphasizing that clinochlore layered structure is crucial for a robust and rich memory response. This work introduces a novel two-dimensional device with promising applications in memory functionalities, highlighting the importance of alternative insulators in fabricating van der Waals heterostructures.

Metals are commonly used as electrostatic gates in devices due to their abundant charge carrier densities that are necessary for efficient charging and discharging. A semiconducting gate can be beneficial for certain fabrication processes, in low light conditions, and for specific gating properties. Here, we determine the effectiveness and limitations of a semiconducting gate in graphene and bilayer graphene devices. Using the semiconducting transition metal dichalcogenides molybdenum disulfide (MoS2) and molybdenum diselenide (MoSe2), we show that these semiconductors can be used to suitably gate the graphene devices for certain operating conditions. For singly gated devices, we find that the semiconducting gates provide gating characteristics comparable with metallic gates below liquid helium temperatures but include resistivity features resulting from gate voltage clamping of the MoS$_2$. A 1D potential model is developed that corroborates the clamping effect observed in the measurements. In doubly gated devices, we pin down the parameter range of effective operation and show that the semiconducting depletion regime results in clamping and hysteresis from defect state charge trapping. Our results provide a guide for the appropriate operating conditions for employing semiconducting gates and open the door to novel device architectures., Comment: 15 pages, 3 figures

In gapped Dirac materials, the topological current associated with each valley can flow in opposite directions creating long-range charge-neutral valley currents. We report valley currents in hBN/bilayer-graphene heterostructures with an energy gap, which is tunable by a perpendicular electric (displacement) field in a dual-gated structure. We observed significant nonlocal resistance, consistent with the scaling theory of the valley Hall effect. In the low-temperature limit, the nonlocal resistance approaches a saturated value near the "quantum limit," indicating the emergence of quantum valley currents.

This letter reports a time resolved pump-probe reflectance spectroscopic study on moir\'e excitons in a twisted monolayer WS2/WSe2 heterostructure. By probing at the resonant energies of intralayer excitons, we observed their distinct temporal tracks under the influence of interlayer excitons, which we attribute to the discrepancy in spatial distribution of the intralayer excitons in different layers. We also observed that intralayer moir\'e excitons in WSe2 layer differ at decay rate, which reflects different locations of Wannier-like and charge-transfer intralayer excitons in a moir\'e cell. We concluded that the interlayer moir\'e excitons form within a few picoseconds and have the lifetime exceeding five nanoseconds. Our results provide insights into the nature of moir\'e excitons and the strain's significant impact on their behaviour in twisted heterostructures, which could have important implications for the development of novel optoelectronic devices., Comment: 12 pages, 4 figures

Since the ground-breaking discovery of the quantum Hall effect, half-quantized quantum Hall plateaus have been some of the most studied and sought-after states. Their importance stems not only from the fact that they transcend the composite fermion framework used to explain fractional quantum Hall states (such as Laughlin states). Crucially, they hold promise for hosting non-Abelian excitations, which are essential for developing topological qubits - key components for fault-tolerant quantum computing. In this work, we show that these coveted half-quantized plateaus can appear in more than one unexpected way. We report the observation of fractional states with conductance quantization at $\nu_H = 5/2$ arising due to charge equilibration in the confined region of a quantum point contact in monolayer graphene., Comment: 30 pages, 18 figures, and 2 tables

The tunability of superconducting magic-angle twisted-layer graphene films elevates this material system to a promising candidate for superconducting electronics. We implement a gate-tuned Josephson junction in a magic-angle twisted four-layer graphene film. Field-dependent measurements of the critical current show a Fraunhofer-like pattern that differs from the standard pattern with characteristics typical for a weak transverse screener. We observe sudden shifts associated with vortices jumping into and out of the leads. By tuning the leads to the edge of the superconducting dome, we observe fast switching between superconducting and normal states, an effect associated with vortex dynamics. Time-dependent measurements provide us with the vortex energy scale and an estimate for the London penetration depth, in agreement with recent kinetic inductance measurements on twisted graphene films. Our results prove the utility of our junction as a sensor for vortex detection, allowing us to extract fundamental properties of the 2D superconductor., Comment: 21 pages, 4 figures

Exploring the pathways of polarization switching in 2D sliding ferroelectrics with multiple internal interfaces is crucial for understanding the switching mechanism and for enhancing their performance in memory-related applications. However, distinguishing the rich configurations of various stacking from a coexistence of polarization domains has remained challenging. In this investigation, we employ optical techniques to resolve the stacking degeneracy in a trilayer 3R-MoS2 across several polarization switching cycles. Through a comprehensive analysis of the unique excitonic response exhibited by different layers, we unveil multiple polarization switching pathways that are determined by the sequential release of domain walls initially pinned at various interfaces within the trilayer, providing an understanding of the switching mechanism in multilayered sliding ferroelectrics. Our study not only reveals the intricate dynamics of polarization switching, but also underscores the crucial role of controlling domain walls, pinning centers, and doping levels, offering new insights for enhancing the applications of these materials in sensing and computing.

Field-effect devices constructed by stacking flakes of van der Waals (vdW) materials, with hexagonal boron nitride (hBN) playing the role of gate dielectric, often exhibit virtually no hysteresis in their characteristics. This permits exquisitely detailed studies of diverse gate-voltage-tuned phenomena in vdW devices. Recently, however, a dramatic form of gate hysteresis, sometimes called the "gate doesn't work" (GDW) or "electron ratchet" effect, has been seen in certain individual vdW devices that seem otherwise unexceptional. When it occurs, this hysteresis phenomenon is striking and robust, yet it is difficult to reliably reproduce between devices and, largely as a result, its origin remains disputed. Most devices where it has been seen have a bilayer graphene channel and nominal rotational alignment between the graphene and hBN, which has engendered explanations based on properties of bilayer graphene combined with moir\'e effects. Here, we report our studies of the phenomenon observed in devices that have multilayer graphene channels. We find that the effect can occur in devices with graphite channels that have many more than two graphene layers, in which case it is unambiguously associated with just one surface of the graphite. It can also survive to room temperature, occur in the absence of intentional rotational alignment with hBN, persist when a monolayer of WSe2 is inserted between the graphene and hBN, and exhibit continuous relaxation on timescales of hours or longer. These observations impose strong constraints on the origin of this puzzling phenomenon, which has exciting potential applications if it can be mastered., Comment: 7 pages, 4 figures, 12 supplementary information figures, 1 supplementary information table

Combining graphene with transition metal dichalcogenides (TMDs) leads to enhanced spin-orbit coupling (SOC) in the graphene. The induced SOC has a large effect on the low-energy part of the band structure leading to or stabilizing novel phases such as topological phases or superconductivity. Here, the pressure dependence of the SOC strength is investigated in bilayer graphene/WSe$_2$ heterostructures. We performed magnetoconductance studies, such as weak localization, quantum Hall, and Shubnikov-de Haas oscillation measurements to extract the different SOC terms which determine the low-energy band structure of BLG. We find a significant increase of the SOC strengths as a result of the pressure. Our studies highlight the large tunability of SOC coupling strength with pressure, which is important for correlated phases or spin qubits in BLG/WSe$_2$ heterostructures.

Van der Waals heterostructures have emerged as a versatile platform to study correlated and topological electron physics. Spectroscopy experiments in the THz regime are crucial, since the energy of THz photons matches that of relevant excitations and charge dynamics. However, their micron-size and complex (dual-)gated structures have challenged such measurements. Here, we demonstrate on-chip THz spectroscopy on a dual-gated bilayer graphene device at liquid helium temperature. To avoid unwanted THz absorption by metallic gates, we developed a scheme of operation by combining semiconducting gates and optically controlled gating. This allows us to measure the clean THz response of graphene without being affected by the gates. We observed the THz signatures of electric-field-induced bandgap opening at the charge neutrality. We measured Drude conductivities at varied charge densities and extracted key parameters, including effective masses and scattering rates. This work paves the way for studying novel emergent phenomena in dual-gated two-dimensional materials.

Scanning tunneling potentiometry (STP) is used to probe the local, current-induced electrochemical potential of carriers in graphene near circular electrostatic barriers in an out-of-plane magnetic field ranging from 0 to 1.4 T. These measurements provide nanometer-resolved information about the local motion of carriers, revealing significant changes in carrier dynamics with increasing field strength. At low magnetic fields the electrochemical potential displays a spiral-like pattern, while at high fields it exhibits distinct changes at particular radii. We show that the observed behavior indicates a transition from diffusive to ballistic transport. Additionally, the sharp changes in the measured potential profile at high fields result from the `spirograph' motion of carriers, which creates a local enhancement of the Hall field one cyclotron diameter away from the semiclassical turning point near the electrostatic barrier., Comment: 18 pages, 6 figures

One of the most captivating properties of polaritons is their capacity to confine light at the nanoscale. This confinement is even more extreme in two-dimensional (2D) materials. 2D polaritons have been investigated by optical measurements using an external photodetector. However, their effective spectrally resolved electrical detection via far-field excitation remains unexplored. This fact hinders their potential exploitation in crucial applications such as sensing molecules and gases, hyperspectral imaging and optical spectrometry, banking on their potential for integration with silicon technologies. Herein, we present the first electrical spectroscopy of polaritonic nanoresonators based on a high-quality 2D-material heterostructure, which serves at the same time as the photodetector and the polaritonic platform. We employ metallic nanorods to create hybrid nanoresonators within the hybrid plasmon-phonon polaritonic medium in the mid and long-wave infrared ranges. Subsequently, we electrically detect these resonators by near-field coupling to a graphene pn-junction. The nanoresonators simultaneously present a record of lateral confinement and high-quality factors of up to 200, exhibiting prominent peaks in the photocurrent spectrum, particularly at the underexplored lower reststrahlen band of hBN. We exploit the geometrical and gate tunability of these nanoresonators to investigate their impact on the photocurrent spectrum and the polaritonic's waveguided modes. This work opens a venue for studying this highly tunable and complex hybrid system, as well as for using it in compact platforms for sensing and photodetection applications., Comment: 34 pages, 4 main figures and 22 supplementary figures

Bose-Fermi mixtures naturally appear in various physical systems. In semiconductor heterostructures, such mixtures can be realized, with bosons as excitons and fermions as dopant charges. However, the complexity of these hybrid systems challenges the comprehension of the mechanisms that determine physical properties such as mobility. In this study, we investigate interlayer exciton diffusion in an H-stacked WSe$_2$/WS$_2$ heterobilayer. Our measurements are performed in the dilute exciton density limit at low temperatures to examine how the presence of charges affects exciton mobility. Remarkably, for charge doping near the Mott insulator phase, we observe a giant enhancement of exciton diffusion of three orders of magnitude compared to charge neutrality. We attribute this observation to mobile valence holes, which experience a suppressed moir\'e potential due to the electronic charge order in the conduction band, and recombine with any conduction electron in a non-monogamous manner. This new mechanism emerges for sufficiently large fillings in the vicinity of correlated generalized Wigner crystal and Mott insulating states. Our results demonstrate the potential to characterize correlated electron states through exciton diffusion and provide insights into the rich interplay of bosons and fermions in semiconductor heterostructures., Comment: Main text: 19 pages, 4 figures. Supplementary Material: 9 pages, 6 figures

Two-dimensional semiconductors and their moir\'e superlattices have emerged as important platforms for investigating correlated electrons. However, many key properties of these systems, such as the frequency-dependent conductivity, remain experimentally inaccessible because of the mesoscopic sample size. Here we report a technique to directly measure the complex conductivity of electrostatically gated two-dimensional semiconductors in the terahertz frequency range. Applying this technique to a WSe2 monolayer encapsulated in hBN, we observe clear Drude-like response between 0.1 and 1 THz, in a density range challenging to access even in DC transport. Our work opens a new avenue for studying tunable van der Waals heterostructures using terahertz spectroscopy.

Monolayer semiconductor transferred on nanopillar arrays provides site-controlled, on-chip single photon emission, which is a scalable light source platform for quantum technologies. However, the brightness of these emitters reported to date often falls short of the perceived requirement for such applications. Also, the single photon purity usually degrades as the brightness increases. Hence, there is a need for a design methodology to achieve enhanced emission rate while maintaining high single photon purity. Using WSe$_2$ on high-aspect-ratio ($\sim 3$ - at least two-fold higher than previous reports) nanopillar arrays, here we demonstrate $>10$ MHz single photon emission rate in the 770-800 nm band that is compatible with quantum memory and repeater networks (Rb-87-D1/D2 lines), and satellite quantum communication. The emitters exhibit excellent purity (even at high emission rates) and improved out-coupling due to the use of a gold back reflector that quenches the emission away from the nanopillar., Comment: Accepted in Nano Letters

Twisted graphene moire superlattice has been demonstrated as an exotic platform for investigating correlated states and nontrivial topology. Among the moire family, twisted double bilayer graphene (TDBG) is a tunable flat band system expected to show stacking-dependent topological properties. However, electron correlations and the band topology are usually intertwined in the flat band limit, rendering the unique topological property due to stacking still elusive. Focusing on a large-angle TDBG with weak electron correlations, here we probe the Landau level (LL) spectra in two differently stacked TDBG, i.e. ABBA- and ABAB-TDBG, to unveil their distinct topological properties. For ABBA-TDBG, we observe non-trivial topology at zero electric displacement filed, evident from both the emergence of Chern bands from half fillings and the closure of gap at CNP above a critical magnetic field. For ABAB-TDBG, by contrast, we find that the moire band is topologically trivial, supported by the absence of LLs from half fillings and the persistence of the gap at CNP above the critical magnetic fields. In addition, we also observe an evolution of the trivial-to-nontrivial topological transition at finite D fields, confirmed by the emerged Landau fans originating from quarter filling v = 1. Our result demonstrates, for the first time, the unique stacking-dependent topology in TDBG, offering a promising avenue for future investigations on topological states in correlated systems., Comment: 12 pages, 5 figures. Comments are welcome

Quantum scars refer to eigenstates with enhanced probability density along unstable classical periodic orbits (POs). First predicted 40 years ago, scars are special eigenstates that counterintuitively defy ergodicity in quantum systems whose classical counterpart is chaotic. Despite the importance and long history of scars, their direct visualization in quantum systems remains an open field. Here we demonstrate that, by using an in-situ graphene quantum dot (GQD) creation and wavefunction mapping technique, quantum scars are imaged for Dirac electrons with nanometer spatial resolution and meV energy resolution with a scanning tunneling microscope. Specifically, we find enhanced probability densities in the form of lemniscate-shaped and streak-like patterns within our stadium-shaped GQDs. Both features show equal energy interval recurrence, consistent with predictions for relativistic quantum scars. By combining classical and quantum simulations, we demonstrate that the observed patterns correspond to two unstable POs that exist in our stadium-shaped GQD, thus proving they are both quantum scars. In addition to providing the first unequivocal visual evidence of quantum scarring, our work offers insight into the quantum-classical correspondence in relativistic chaotic quantum systems and paves the way to experimental investigation of other recently proposed scarring species such as perturbation-induced scars, chiral scars, and antiscarring.

Single photon emitters (SPEs) are building blocks of quantum technologies. Defect engineering of 2D materials is ideal to fabricate SPEs, wherein spatially deterministic and quality-preserving fabrication methods are critical for integration into quantum devices and cavities. Existing methods use combination of strain and electron irradiation, or ion irradiation, which make fabrication complex, and limited by surrounding lattice damage. Here, we utilise only ultra-low energy electron beam irradiation (5 keV) to create dilute defect density in hBN-encapsulated monolayer MoS2, with ultra-high spatial resolution (< 50 nm, extendable to 10 nm). Cryogenic photoluminescence spectra exhibit sharp defect peaks, following power-law for finite density of single defects, and characteristic Zeeman splitting for MoS2 defect complexes. The sharp peaks have low spectral jitter (< 200 {\mu}eV), and are tuneable with gate-voltage and electron beam energy. Use of low-momentum electron irradiation, ease of processing, and high spatial resolution, will disrupt deterministic creation of high-quality SPEs., Comment: 31 pages, 16 figures, 1 table. Supplementary Material included

Two-dimensional crystals stack together through weak van der Waals (vdW) forces, offering unlimited possibilities to play with layer number, order and twist angle in vdW heterostructures (HSs). The realisation of high-performance optoelectronic devices, however, requires the achievement of specific band alignments, $k$-space matching between conduction band minima and valence band maxima, as well as efficient charge transfer between the constituent layers. Fine tuning mechanisms to design ideal HSs are lacking. Here, we show that layer-selective strain engineering can be exploited as an extra degree of freedom in vdW HSs to tailor their band alignment and optical properties. To that end, strain is selectively applied to MS$_2$ (M=Mo,W) monolayers in InSe/MS$_2$ HSs. This triggers a giant PL enhancement of the highly tuneable but weakly emitting InSe by one to three orders of magnitude. Resonant PL excitation measurements, supported by first-principle calculations, provide evidence of a strain-activated direct charge transfer from the MS$_2$ MLs toward InSe. This significant emission enhancement achieved for InSe widens its range of applications for optoelectronics.

Noncentrosymmetric 2D superconductors with large spin-orbit coupling offer an opportunity to explore superconducting behaviors far beyond the Pauli limit. One such superconductor, few-layer T$_d$-MoTe$_2$, has large upper critical fields that can exceed the Pauli limit by up to 600%. However, the mechanisms governing this enhancement are still under debate, with theory pointing towards either spin-orbit parity coupling or tilted Ising spin-orbit coupling. Moreover, ferroelectricity concomitant with superconductivity has been recently observed in the bilayer, where strong changes to superconductivity can be observed throughout the ferroelectric transition pathway. Here, we report the superconducting behavior of bilayer T$_d$-MoTe$ _2$ under an in-plane magnetic field, while systematically varying magnetic field angle and out-of-plane electric field strength. We find that superconductivity in bilayer MoTe$_2$ exhibits a two-fold symmetry with an upper critical field maxima occurring along the b-axis and minima along the a-axis. The two-fold rotational symmetry remains robust throughout the entire superconducting region and ferroelectric hysteresis loop. Our experimental observations of the spin-orbit coupling strength (up to 16.4 meV) agree with the spin texture and spin splitting from first-principles calculations, indicating that tilted Ising spin-orbit coupling is the dominant underlying mechanism.

Under high perpendicular magnetic field and at low temperatures, graphene develops an insulating state at the charge neutrality point. This state, dubbed $\nu=0$, is due to the interplay between electronic interactions and the four-fold spin and valley degeneracies in the flat band formed by the $n=0$ Landau level. Determining the ground state of $\nu=0$, including its spin and valley polarization, has been a theoretical and experimental undertaking for almost two decades. Here, we present experiments probing the bulk thermal transport properties of monolayer graphene at $\nu=0$, which directly probe its ground state and collective excitations. We observe a vanishing bulk thermal transport, in contradiction with the expected ground state, predicted to have a finite thermal conductance even at very low temperature. Our result highlight the need for further investigations on the nature of $\nu=0$., Comment: Contains Supplementary Information

Emergent strongly-correlated electronic phenomena in atomically-thin transition metal dichalcogenides are an exciting frontier in condensed matter physics, with examples ranging from bilayer superconductivity~\cite{zhao2023evidence} and electronic Wigner crystals~\cite{smolenski2021signatures,zhou2021bilayer} to the ongoing quest for exciton condensation~\cite{wang2019evidence,ma2021strongly,shi2022bilayer}. Here, we experimentally investigate the properties of indirect excitons in naturally-grown MoS$_2$-homobilayer, integrated in a dual-gate device structure allowing independent control of the electron density and out-of-plane electric field. Under conditions when electron tunneling between the layers is negligible~\cite{pisoni2019absence}, upon electron doping the sample, we observe that the two excitons with opposing dipoles hybridize, displaying unusual behavior distinct from both conventional level crossing and anti-crossing. We show that these observations can be explained by static random coupling between the excitons, which increases with electron density and decreases with temperature. We argue that this phenomenon is indicative of a spatially fluctuating order parameter in the form of interlayer electron coherence, a theoretically predicted many-body state~\cite{zheng1997exchange} that has yet to be unambiguously established experimentally outside of the quantum Hall regime~\cite{sarma2008perspectives,spielman2000resonantly,kellogg2004vanishing,kellogg2002observation,spielman2001observation,fertig1989energy,shi2022bilayer}. Implications of our findings for future experiments and quantum optics applications are discussed.

Twisted bilayer graphene (tBLG) near the magic angle is an interesting platform to study correlated electronic phases. These phases are gate-tunable and are closely related to the presence of flat electronic bands, isolated by single-particle band gaps. This allows electrostatically controlled confinement of charge carriers in the flat bands to explore the interplay between confinement, band renormalisation, electron-electron interactions and the moir\'e superlattice, potentially revealing key mechanisms underlying these electronic phases. Here, we show gate-controlled flat-band charge carrier confinement in near-magic-angle tBLG, resulting in well-tunable Coulomb blockade resonances arising from the charging of electrostatically defined islands in tBLG. Coulomb resonance measurements allow to study magnetic field-induced quantum oscillations in the density of states of the source-drain reservoirs, providing insight into the gate-tunable Fermi surfaces of tBLG. Comparison with tight-binding calculations emphasises the importance of displacement-field-induced band renormalisation, which is crucial for future advanced gate-tunable quantum devices and circuits in tBLG., Comment: 25 pages, 14 figures

The discovery of single photon emitters (SPEs) in two-dimensional (2D) layered materials has greatly inspired numerous studies towards utilizing the system for quantum science and technology. Thus, the dynamic control of SPEs, including neutral and charged emitters, is highly desirable. In addition to the electric control, strain tuning is particularly attractive for the 2D materials since it can activate SPEs which are formed upon localizing free excitons. While strain engineering has been demonstrated for free and neutral localized excitons, few were shown on charged localized excitons which require an additional gate control. In this article, we show the strain-tunable charged localized excitons by transferring a top-gated monolayer semiconductor on a relaxor ferroelectric. Importantly, we unveil an enhanced interaction between the localized oscillating dipoles and the nanodomains. We further demonstrate the strain-dependent circular polarization and tunable rates of energy shifts under a magnetic field. Our results imply that the integration of 2D materials with relaxor ferroelectrics provides a rich platform for nanophotonics and quantum photonics., Comment: 11 pages, 4 figures

Interfacial ferroelectricity, prevalent in various parallel-stacked layered materials, allows switching of out-of-plane ferroelectric order by in-plane sliding of adjacent layers. Its resilience against doping potentially enables next-generation storage and logic devices. However, studies have been limited to indirect sensing or visualization of ferroelectricity. For transition metal dichalcogenides, there is little knowledge about the influence of ferroelectric order on their intrinsic valley and excitonic properties. Here, we report direct probing of ferroelectricity in few-layer 3R-MoS$_2$ using reflectance contrast spectroscopy. Contrary to a simple electrostatic perception, layer-hybridized excitons with out-of-plane electric dipole moment remain decoupled from ferroelectric ordering, while intralayer excitons with in-plane dipole orientation are sensitive to it. Ab initio calculations identify stacking-specific interlayer hybridization leading to this asymmetric response. Exploiting this sensitivity, we demonstrate optical readout and control of multi-state polarization with hysteretic switching in a field-effect device. Time-resolved Kerr ellipticity reveals a direct correspondence between spin-valley dynamics and stacking order.

Expanding the performance of field effect devices is a key challenge of the ever-growing chip industry at the core of current technologies. A highly desired nonvolatile response in tiny multiferroic transistors is expected by electric field control of atomic movements rather than the typical electronic redistribution. Recently, such field effect control of structural transitions was established in commensurate stacking configurations of honeycomb van der Waals (vdW) polytypes by sliding narrow boundary dislocations between oppositely polarized domains. The interfacial ferroelectric response, however, relied on preexisting boundary strips between relatively large micron-scale domains, severely limiting practical implementations. Here, we report the robust switching of single-domain polytypes in nm-scale islands embedded in super lubricant vdW arrays. We etch cavities into a thin layered spacer and then encapsulate it with parallel functional flakes. The incommensurate flakes above and under the spacer sag and touch at each cavity to form uniform crystalline islands free from interlayer deformations. By imaging the polytypes' ferroelectric response, we observe reversible nucleation and annihilation of boundary strips and geometry-adaptable hysteresis loops. Using mechanical stress, we accurately position the boundary strip, modify the interlayer twist angle, and nucleate intermediate polar domain patterns. By precisely designing the size, shape, symmetry, and distribution of the islands in these Super Lubricant Arrays of Polytype (SLAP), we envision numerous device functionalities and SlideTronics applications. These range from ultra-sensitive detectors of atomic-scale shifts to nonvolatile multi-ferroic tunneling transistors with tunable coercive switching fields, and even elastically-coupled memory cells for neuromorphic architectures.

Twisted hexagonal boron nitride (thBN) exhibits emergent ferroelectricity due to the formation of moir\'e superlattices with alternating AB and BA domains. These domains possess electric dipoles, leading to a periodic electrostatic potential that can be imprinted onto other 2D materials placed in its proximity. Here we demonstrate the remote imprinting of moir\'e patterns from twisted hexagonal boron nitride (thBN) onto monolayer MoSe2 and investigate the resulting changes in the exciton properties. We confirm the imprinting of moir\'e patterns on monolayer MoSe2 via proximity using Kelvin probe force microscopy (KPFM) and hyperspectral photoluminescence (PL) mapping. By developing a technique to create large ferroelectric domain sizes ranging from 1 {\mu}m to 8.7 {\mu}m, we achieve unprecedented potential modulation of 387 +- 52 meV. We observe the formation of exciton polarons due to charge redistribution caused by the antiferroelectric moir\'e domains and investigate the optical property changes induced by the moir\'e pattern in monolayer MoSe2 by varying the moir\'e pattern size down to 110 nm. Our findings highlight the potential of twisted hBN as a platform for controlling the optical and electronic properties of 2D materials for optoelectronic and valleytronic applications.