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Interfaces of ferromagnetic/organic material hybrid structures refer to the spin interface that governs physical properties for achieving high spin polarization, low impedance mismatch, and long spin relaxation. Spintronics can add new functionalities to electronic devices by taking advantage of the spin degree of freedom of electrons, which makes understanding the dynamic magnetic properties of magnetic films important for spintronic device applications. Our knowledge regarding the magnetic dynamics and magnetic anisotropy of combining ferromagnetic layer and organic semiconductor by microwave-dependent magnetic measurements remains limited. Herein, we report the impact of an organic layer on the dynamic magnetic behavior of nickel/rubrene bilayers deposited on a Si(100) substrate. From magnetic dynamic measurements, opposite signs of effective magnetic fields between the in-plane (IP) and out-of-plane (OP) configurations suggest that the magnetization of Ni(x)/rubrene/Si prefers to coexist. A shift in OP resonance fields to higher values can mainly be attributed to the enhanced second-order anisotropy parameter K2 value. Based on IP measurements, a two-magnon scattering mechanism is dominant for thin Ni(x)/rubrene/Si bilayers. By adding a rubrene layer, the highly stable IP combined with the tunable OP ferromagnetic resonance spectra for Ni(x)/rubrene/Si bilayers make them promising materials for use in microwave magnetic devices and spintronics with controllable perpendicular magnetic anisotropy. [ABSTRACT FROM AUTHOR]

The results of a study on the electronic states and valence band offset (VBO) in heterostructures of the transition metal oxide LaNiO3 (LNO)/SrRuO3 (SRO) grown on (001) SrTiO3 (STO) substrates are reported. X‐ray photoelectron spectroscopy (XPS) data reveal the presence of Ni2+ states in LNO layer that can develop a reduced bandwidth of O‐2p and Ni‐3d. Further analysis of XPS data confirms the presence of a VBO, and the value of VBO is found to be +0.02 eV and –0.38 eV for the bilayers of STO/LaNiO3/SrRuO3 (BL‐1) and STO/SrRuO3/LaNiO3 (BL‐2), respectively. Distinct signs of VBO are noticed between the bilayers due to the relative shift of the valence band of the top layer with respect to the bottom layer. Such band shifts can lead to the charge transfer across the (3d−4d) interface, which significantly modifies the global electronic transport and magnetic properties of the bilayers. A detailed discussion on the underlying physical phenomena of electrical transport and magnetic responses triggered by the interface is also incorporated herein. [ABSTRACT FROM AUTHOR]