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We discuss the structure of threading dislocations in α-Ga2O3 thin films grown on c- and m-plane sapphire substrates. The thickness-dependent threading dislocation density in both films directly affects the electrical properties of the films including carrier concentration and mobility. Two distinct types of threading dislocations are identified for each of the c- and m-plane α-Ga2O3 thin films. The c-plane α-Ga2O3 thin film shows Burgers vectors of 1 / 3 [ 1 1 ¯ 01 ] and 1 / 3 [ 11 2 ¯ 0 ] , while the m-plane α-Ga2O3 thin film displays Burgers vectors of 1 / 3 [ 2 1 ¯ 1 ¯ 0 ] and 1 / 3 [ 1 1 ¯ 01 ]. This paper presents a detailed structure of the threading dislocations in α-Ga2O3, which has been little disclosed thus far mainly due to the difficulty in synthesizing the metastable α-Ga2O3. [ABSTRACT FROM AUTHOR]

We performed Ge doping of α-Ga2O3 thin films grown on m-plane sapphire substrates using mist chemical vapor deposition. Although the typical growth rate was high at 4 μm/h, the resultant α-Ga2O3 thin films exhibited high crystallinity. We controlled the carrier density in the range of 8.2 × 1016–1.6 × 1019 cm−3 using bis[2-carboxyethylgermanium(IV)]sesquioxide as the Ge source. The highest mobility achieved was 66 cm2 V−1 s−1 at a carrier concentration of 6.3 × 1017 cm−3. Through secondary ion mass spectrometry analysis, a linear relationship between the Ge concentration in the α-Ga2O3 thin films and the molar ratio of Ge to Ga in the source solution was established. The quasi-vertical Schottky barrier diode fabricated using the Ge-doped α-Ga2O3 thin films exhibited an on-resistance of 7.6 mΩ cm2 and a rectification ratio of 1010. These results highlight the good performance of the fabricated device and the significant potential of Ge-doped α-Ga2O3 for power-device applications. [ABSTRACT FROM AUTHOR]

Rutile-type wide and ultrawide band-gap oxide semiconductors are emerging materials for high-power electronics and deep ultraviolet optoelectronics applications. A rutile-type GeO2-SnO2 alloy (r-GexSn1–xO2) recently found is one of such materials. Herein, we report low-temperature electron transport properties of r-GexSn1−xO2 thin films with x = 0.28 and 0.41. Based on resistivity and magnetoresistance measurements, along with the theory of quantum interference, it is suggested that Efros–Shklovskii variable-range hopping, i.e., hopping over the states within the Coulomb gap, is dominant at lower temperatures (T ≤ 10 and 15 K) in both r-Ge0.41Sn0.59O2 and r-Ge0.28Sn0.72O2. The negative and positive magnetoresistances observed at low temperatures are attributable to the quantum interference and field-induced spin alignment, respectively. The magnetoresistance measurements at higher temperatures suggest that both Mott variable–range hopping and thermally activated band conduction occur at T < 100 K and that almost pure thermally activated band conduction takes place at T ≥ 150 K. [ABSTRACT FROM AUTHOR]

The magneto‐optical properties of rare‐earth‐rich borate glasses prepared using a levitation technique were thoroughly investigated. Among the series of rare‐earth borate glasses, Tb2O3–B2O3 and Dy2O3–B2O3 glasses displayed remarkably large Faraday effects in the visible region. The Verdet constant of 58Tb2O3–42B2O3 reached −229 rad/T·m at 633 nm, surpassing the value of commercially available single‐crystalline Tb3Ga5O12. Compositions with a higher rare‐earth oxide content (60 mol%) than that of binary glasses facilitated the successful synthesis of Tb2O3–Dy2O3–B2O3 ternary glasses. The Verdet constant linearly increased with increasing Tb2O3 content for the glasses with 40 mol% B2O3. Results indicate that rare‐earth‐rich borate glasses are promising candidates for magneto‐optical applications in the visible region, and that the types and amounts of rare‐earth ion mainly affect these properties. [ABSTRACT FROM AUTHOR]

In this study, we developed a metal–semiconductor field-effect transistor (MESFET) using a Ge-doped α-Ga2O3 channel layer grown via mist chemical vapor deposition (CVD). As a buffer layer, Fe-doped α-Ga2O3 was deposited between the Ge-doped α-Ga2O3 channel layer and the m-plane sapphire substrate to reduce the influence of threading dislocations and suppress current leakage. Furthermore, an n+ contact layer heavily doped with Ge was deposited on the channel layer to reduce the contact resistance. The carrier concentration and Hall mobility of the channel layer were 2.1 × 1017 cm−3 and 44 cm2 V−1 s−1, respectively. The transfer length method indicates that the contact between the metal and the n+ layer exhibits Ohmic behavior with a resistance as low as 16 Ω mm. The MESFET exhibited a maximum current of 24 mA/mm and an on-resistance of 587 Ω mm at VGS = 2 V. The Ion/Ioff ratio exceeded 109. The breakdown voltage was 364 V, the leakage current between the drain and the source was below 10−5 mA/mm, and the power figure of merit was 1.2 MW/cm2. These results demonstrate that the mist CVD-derived Ge-doped α-Ga2O3 can give rise to a MESFET with good performance. [ABSTRACT FROM AUTHOR]

Rutile-type GeO2 (r-GeO2) with an ultrawide bandgap of ∼4.7 eV has emerged as a promising material for next-generation power-electronic and optoelectronic devices. We performed transmission electron microscopy (TEM) observation to analyze the structural properties of r-GeO2 film on r-TiO2 (001) substrate at an atomic level. The r-GeO2 film exhibits a threading dislocation density of 3.6 × 109 cm−2 and there exist edge-, screw-, and mixed-type dislocations in the film as demonstrated by two-beam TEM. The edge-type dislocations have Burgers vectors of [100] and/or [110]. The bandgap of the r-GeO2 film is 4.74 ± 0.01 eV as determined by electron energy loss spectroscopy. [ABSTRACT FROM AUTHOR]

To date, the plasmonic nanostructure utilized for magneto-optical (MO) enhancement has been limited to noble metals with resulted enhancement in the green-red part of visible spectrum. In this study, we fabricated a diffractive hexagonal array composed of Al nanoparticles (NPs) with a thin 7.5 nm ferromagnetic film and pushed the enhanced Faraday rotation (FR) into the blue to green range of the visible light. The freedom and ability to control the working spectral region in the whole visible range from 400 to 800 nm were also demonstrated by changing the lattice constant and the dielectric environment of plasmonic nanostructures. Particularly, in the blue range we obtained the maximum FR 0.57° at 410 nm with a broad boosting region around 0.5° from 400 to 500 nm. Moreover, the largest FR 1.66° was shown at 638 nm by tuning the dielectric environment into a higher refractive index medium. The results of our investigation demonstrate the potential of Al-based magnetoplasmonic effect and offer opportunities to push the MO spectral response out of visible range into the ultraviolet-blue range.

High optical absorptivity or a large absorption cross-section is necessary to fully utilize the irradiation of light for photothermal heating. Recently, titanium nitride (TiN) nanostructures have been demonstrated to be robust optical absorbers in the optical range owing to their nonradiative decay processes enhanced by broad plasmon resonances. Because the photothermally generated heat dissipates to the surroundings, suppressing heat transfer from TiN nanostructures is crucial for maximizing the photothermal temperature increase. In the current work, compared to the planar TiN film, high-aspect-ratio TiN nanostructures with subwavelength periodicities have been demonstrated to enhance the photothermal temperature increase by a 100-fold using nanotube samples. The reason is attributed to the extremely anisotropic effective thermal conductivities. Our work has revealed that high-aspect-ratio TiN nanostructures are effective in improving photothermal heating, and they can be used in various applications, such as solar heating, chemical reactions, and microfluidics.

The combination of metasurface with optical emitters provides a unique opportunity to control the emission. The metasurface effect strongly depends on the spectral overlap between the internal electronic transitions of the emitter and the optical resonances of the metasurface. Elaborate design of the metasurface could realize the resonances at both absorption and emission wavelengths of the emitter, but it usually leads to complexity in fabrication. In this work, we propose a very simple strategy to obtain the resonances at both wavelengths by sandwiching the emitter layer with a pair of metasurfaces designed for absorption and emission, respectively. For this purpose, we use a sticker of Al metasurface, which is the array of Al nanoparticles embedded in a flexible polymer film that can be stuck on any clean surfaces. The metasurface stack is prepared by simply placing the sticker, resonating at the emission wavelength, on the emitter layer deposited on the TiO 2 metasurface resonating at the absorption wavelength. The overall enhancement achieved for the stack of the metasurfaces can be understood roughly as the multiplication of contributions from the respective metasurfaces. Employing a sticker provides an easy-to-make way of constructing a stack of metasurfaces, which increases the degree of freedom in designing the metasurface-coupled emitters. [ABSTRACT FROM AUTHOR]

Although titanium dioxide ( TiO 2) is a promising constituent of the metasurface operative in the visible, the experimental demonstration is limited so far because TiO 2 is intrinsically chemically/physically stable and is hard to be processed into nanostructures with high precision. In this paper, we develop a facile pathway to fabricate the TiO 2 metasurface via oxidation of Ti nanoparticle array that can be made by the conventional lift-off process. Under an optimized heat-treatment procedure in air, Ti nanoparticles are converted to TiO 2 nanoparticles with a size expansion predictable by the molar volume mismatch between Ti and TiO 2 , while the global periodic arrangement is retained. We apply this technique to a Ti nanoparticle array fabricated on the phosphor plate of yttrium aluminum garnet doped with Ce 3 + (YAG:Ce) and demonstrate the directional outcoupling of emission through the metasurface. The photoluminescence from the YAG:Ce plate is directionally enhanced in the forward direction, as large as three times as much compared to that from the flat YAG:Ce plate without the metasurface. Because of the high transparency and lossless feature of TiO 2 in the visible, the present metasurface does not lower the total quantum yield of the system consisting of the YAG:Ce plate and the TiO 2 metasurface, which is beneficial for the solid-state-lighting application. [ABSTRACT FROM AUTHOR]

It is theoretically proposed that perovskite-type EuZrO3 becomes a ferromagnet when the lattice volume is increased or the structure is changed from orthorhombic to cubic in contrast to the fact that the stable phase of EuZrO3, the structure of which is orthorhombic, is antiferromagnetic. To investigate the change in crystal structure and magnetic properties of EuZrO3 with the variation of lattice volume, we have synthesized polycrystals of solid solutions AxEu1−xZrO3 (A = Ba, Ca, Sr); Eu2+ is substituted by group 2 elements with different ionic radius to realize the change in lattice volume and crystal structure of EuZrO3. The stable magnetic structure of EuZrO3 solid solutions is tuned with the change of lattice volume. In particular, the ferromagnetic state is stabilized by the increase in lattice volume, which experimentally verifies the prediction by the first-principles calculations. Furthermore, this phenomenon is explainable in terms of the competition between ferromagnetic and antiferromagnetic interactions that is highly related to the volume variation and the rotation of ZrO6 octahedron. The present results indicate that the magnetic structure can be systematically tuned by controlling the chemical pressure in solid solutions. [ABSTRACT FROM AUTHOR]