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2. Effect of surface treatments on Cu/Ultra-low k interconnection technology

Author

Tan, Hwa Jin., Lau, Wai Shing, and School of Electrical and Electronic Engineering

Subjects
Engineering::Electrical and electronic engineering::Electronic apparatus and materials [DRNTU]
Abstract

Single damascene copper interconnect structures were fabricated. Cu/ultra-low-k (porous SiLKTM) interconnects were subjected to surface treatments to study the effects on the structural and electrical properties, including Fourier transform infrared spectroscopy, atomic force microscopy and electrical testing. Master of Science (Microelectronics)

Published
2004

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