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The energy-efficient perceptual capabilities of the human visual system have inspired the development of optoelectronic neuromorphic devices to replicate the essential properties. Color vision that is highly important for perception and cognitive behaviors, such as object recognition, esthetics, and communication, has recently been reported based on optoelectronic neuromorphic devices. The responses to different wavelengths of light are mainly dependent on power density, whereas the eye recognizes color images based on luminosity. This Letter presents a quantum dots (QDs) modified InGaZnO (IGZO) synaptic transistor based on an IGZO/CdS-QDs/PMMA heterojunction. These IGZO-based synapses show significant responsivity to 655-nm light through the spectrum broadening by QDs. More importantly, luminance-based color-to-gray conversion can be realized with this device using a spike encoding scheme, transforming color images into grayscale in parallel. Notably, the QDs modified IGZO-based synapses demonstrated a remarkable 34.3% improvement in recognition accuracy on the multicolor MNIST dataset in comparison with the pristine devices. Our results indicate that this visible-light responsive IGZO-based synapse has great potential for endowing the neuromorphic visual system with enhanced color vision and provides a biologically plausible approach for color-to-gray conversion. [ABSTRACT FROM AUTHOR]

Infrared photodetectors (IRPDs) have become important devices in various applications such as night vision, military missile tracking, medical imaging, industry defect imaging, environmental sensing, and exoplanet exploration. Mature semiconductor technologies such as mercury cadmium telluride and III–V material-based photodetectors have been dominating the industry. However, in the last few decades, significant funding and research has been focused to improve the performance of IRPDs such as lowering the fabrication cost, simplifying the fabrication processes, increasing the production yield, and increasing the operating temperature by making use of advances in nanofabrication and nanotechnology. We will first review the nanomaterial with suitable electronic and mechanical properties, such as two-dimensional material, graphene, transition metal dichalcogenides, and metal oxides. We compare these with more traditional low-dimensional material such as quantum well, quantum dot, quantum dot in well, semiconductor superlattice, nanowires, nanotube, and colloid quantum dot. We will also review the nanostructures used for enhanced light-matter interaction to boost the IRPD sensitivity. These include nanostructured antireflection coatings, optical antennas, plasmonic, and metamaterials.

In this paper, we report the effects of a side-polished fiber (SPF) coated with titanium (Ti) films in different thicknesses, namely 5 nm, 13 nm, and 36 nm, protected by a thin layer of transition metal dichalcogenides (TMDCs) such as molybdenum disulfide (MoS2) and tungsten disulfide (WS2), which provide ultra-sensitive sensor-based surface plasmon resonance (SPR) covering from the visible to mid-infrared region. The SPF deposited with Ti exhibits strong evanescent field interaction with the MoS2 and WS2, and good optical absorption, hence resulting in high-sensitivity performance. Incremental increases in the thickness of the Ti layer contribute to the enhancement of the intensity of transmission with redshift and broad spectra. The findings show that the optimum thickness of Ti with 36 nm combined with MoS2 causes weak redshifts of the longitudinal localized surface plasmon resonance (LSPR) mode, while the same thickness of Ti with WS2 causes large blueshifts. The redshifts are possibly due to a reduced plasmon-coupling effect with the excitonic region of MoS2. The observed blueshifts of the LSPR peak position are possibly due to surface modification between WS2 and Ti. Changing the relative humidity from 58% to 88% only elicited a response in Ti/MoS2. Thus, MoS2 shows more sensitivity on 36-nm thickness of Ti compared with WS2. Therefore, the proposed fiber-optic sensor with integration of 2D materials is capable of measuring humidity in any environment.

A hybrid bistable semiconductor laser structure consisting of an edge-emitting laser as a gain region and a vertical cavity laser as an absorber region, which translates lateral emission to vertical emission is analyzed. The device is modeled using appropriately modified rate equations and simulated using PSPICE circuit simulator. The dc sweep exhibits bistability. The hysterisis width of the bistable characteristics is found to depend on the reverse dc sweep, source resistance, and temperature. It is also noticed that the threshold currents and the hysterisis width can be controlled by the physical dimensions of gain and absorber regions and the driver circuit parameters. Turn-on delay decreases as the input current is increased.

A characterization of temperature-dependent collector breakdown behavior in InP double heterojunction bipolar transistors (DHBTs) with an InGaAs/InP composite collector is conducted. It is ascertained that the variation of impact ionization coefficient due to the change of temperature may affect the device breakdown.

A new approach has been developed that uses only a simple set of formulas to transform noise and Z- parameters between common emitter and common base configurations. This technique is based on the typical T-model of InP double-heterojunction bipolar transistor and calculated results agree with the experimental results, demonstrating that this approach is useful for many broad-band low-noise communication circuit designs. Index Terms--Common base, common emitter, InP HBT, noise figure, noise parameters, Z-parameters.

A comprehensive characterization is presented, of dc and microwave performances involving InP/InGaAs metamorphic heterojunction bipolar transistors (HBT). Metamorphic heterojunction bipolar transistors (MHBT) were grown by solid-source molecular beam epitaxy (SSMBE).