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480 results on '"Tamenori, Y."'

1. Efficient Site-specific Low-energy Electron Production via Interatomic Coulombic Decay Following Resonant Auger Decay

Author

Kimura, M., Fukuzawa, H., Sakai, K., Mondal, S., Kukk, E., Kono, Y., Nagaoka, S., Tamenori, Y., Saito, N., and Ueda, K.

Subjects
Physics - Chemical Physics, Physics - Atomic and Molecular Clusters
Abstract

We identified interatomic Coulombic decay (ICD) channels in argon dimers after spectator-type resonant Auger decay $2p^{-1}~3d \to 3p^{-2}3d, 4d$ in one of the atoms, using momentum resolved electron-ion-ion coincidence. The results illustrate that the resonant core excitation is a very efficient way of producing slow electrons at a specific site, which may cause localized radiation damage. We find also that ICD rate for $3p^{-2}4d$ is significantly lower than that for $3p^{-2}3d$., Comment: 5 pages, 3 figures, 1 table

Published
2013
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47. Dynamics of oxygen Rydberg atom generation following O 1s inner-shell excitation of H2O.

Author

Gejo, T., Ikegami, T., Honma, K., Takahashi, O., Shigemasa, E., Hikosaka, Y., and Tamenori, Y.

Subjects
RYDBERG states, OXYGEN, INNER-shell excitation, PHOTONS, HYDROGEN bonding
Abstract

The emission of low-energy electrons from H2O has been investigated at photon excitation energies in the vicinity of the O 1s ionization threshold. Neutral oxygen Rydberg atoms (O*) were found to form, and the correlation between the initial inner-shell excited state of H2O and the Rydberg state of O* was determined. The initially excited electron in a Rydberg orbital is shown to remain associated with O* even after the cleavage of two O-H bonds.We also show that the energy discrepancy between two Rydberg states of H2O and O* can be explained by the influence of the post-collision interaction, which becomes stronger as the excitation energy approaches the 1s ionization threshold. [ABSTRACT FROM AUTHOR]

Published
2014
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48. Doping of ZnO nanowires using phosphorus diffusion from a spin-on doped glass source.

Author

Bocheux, A., Robin, I. C., Bonaimé, J., Hyot, B., Kolobov, A. V., Mitrofanov, K. V., Fons, P., Tominaga, J., Tamenori, Y., and Feuillet, G.

Subjects
NANOWIRES, ZINC oxide, SOLID solutions, SPECTRUM analysis, PHOSPHORUS, NANOSTRUCTURED materials, DIFFUSION
Abstract

In this article, we report on ZnO nanowires that were phosphorus doped using a spin on dopant glass deposition and diffusion method. Photoluminescence measurements suggest that this process yields p-doped ZnO. The spatial location of P atoms was studied using x-ray near-edge absorption structure spectroscopy and it is concluded that the doping is amphoteric with P atoms located on both Zn and O sites. [ABSTRACT FROM AUTHOR]

Published
2014
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49. Ge L3-edge x-ray absorption near-edge structure study of structural changes accompanying conductivity drift in the amorphous phase of Ge2Sb2Te5.

Author

Mitrofanov, K. V., Kolobov, A. V., Fons, P., Wang, X., Tominaga, J., Tamenori, Y., Uruga, T., Ciocchini, N., and Ielmini, D.

Subjects
ELECTRONIC systems, X-ray absorption, METALLIC composites, PARTICLES (Nuclear physics), NUCLEAR physics
Abstract

A gradual uncontrollable increase in the resistivity of the amorphous phase of phase-change alloys, such as Ge2Sb2Te5, known as drift, is a serious technological issue for application of phase-change memory. While it has been proposed that drift is related to structural relaxation, no direct structural results have been reported so far. Here, we report the results of Ge L3-edge x-ray absorption measurements that suggest that the drift in electrical conductivity is associated with the gradual conversion of tetrahedrally coordinated Ge sites into pyramidal sites, while the system still remains in the amorphous phase. Based on electronic configuration arguments, we propose that during this process, which is governed by the existence of lone-pair electrons, the concentration of free carriers in the system decreases resulting in an increase in resistance despite the structural relaxation towards the crystalline phase. [ABSTRACT FROM AUTHOR]

Published
2014
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50. Detection of N-Te bonds in the as-deposited amorphous nitrogen-doped GeTe-based phase change alloys using N K-edge XANES spectroscopy and their impact on crystallization

Author

Krbal, Miloš, Kolobov, A. V., Fons, P., Mitrofanov, K. V., Tamenori, Y., Hyot, B., Andre, B., Tominaga, J., Krbal, Miloš, Kolobov, A. V., Fons, P., Mitrofanov, K. V., Tamenori, Y., Hyot, B., Andre, B., and Tominaga, J.

Abstract

Using N K-edge XANES studies, we demonstrate a noticeable difference in local structure around the nitrogen atoms in as-deposited amorphous and annealed N-doped GeTe-based phase change alloys. The pronounced changes appear as a approximate to 2 eV shift in the absorption edge to higher photon energies and the overall shape of the XANES spectrum. Comparison of the experimental XANES spectrum of the as deposited amorphous phase with ab-initio XANES simulations discloses that the as-deposited phase mainly consists of the NGe3 and the NTe3 pyramidal units in approximately equal concentration. When annealed, NTe3 units gradually rebond to the NGe3 units and at the same time N atoms diffuse through the amorphous phase to form the GexNy aggregates. Upon long-standing annealing at 400 degrees C a compact interlayer of Ge3N4 is formed in the crystalline phase., Zjistili jsme pomocí XANES studií N K-hrany značný rozdíl v lokálním uspořádání kolem atomů dusíku v čerstvě připravených amorfních a žíhaných dusíkem dopovaných slitinách na bázi GeTe. Zřetelné změny se objevují v podobě posunu v absorpční hraně o 2 eV do vyšších fotonových energií a celkovým tvarem XANES spektra. Porovnání experimentálního XANES spektra deponované amorfní fáze s ab-initio XANES simulacemi odhaluje, že deponovaná amorfní fáze se převážně skládá z NGe3 a NTe3 pyramidálních jednotek v přibližně shodném koncentraci. Během žíhání se NTe3 jednotky postupně přetvářejí do NGe3 jednotek a současně atomy dusíku difundují skrz amorfní fázi za tvorby GexNy shluků. Při dlouhodobém žíhání na teplotu 400°C se vytváří v krystalické fázi mezivrstva Ge3N4.

Published
2018

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