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116 results on '"Takigawa, Ryo"'

18. Room-temperature bonding of Al2O3 thin films deposited using atomic layer deposition.

Author

Takakura, Ryo, Murakami, Seigo, Watanabe, Kaname, and Takigawa, Ryo

Subjects
ATOMIC layer deposition, THIN films, OXIDE coating, ALUMINUM oxide, WAFER level packaging, SEMICONDUCTOR wafer bonding
Abstract

In this study, room-temperature wafer bonding of Al2O3 thin films on Si thermal oxide wafers, which were deposited using atomic layer deposition (ALD), was realized using the surface-activated bonding (SAB) method. Transmission electron microscopy (TEM) observations indicated that these room-temperature-bonded Al2O3 thin films appeared to work well as nanoadhesives that formed strong bond between thermally oxidized Si films. The perfect dicing of the bonded wafer into dimensions of 0.5 mm × 0.5 mm was successful, and the surface energy, which is indicative of the bond strength, was estimated to be approximately 1.5 J/m2. These results indicate that strong bonds can be formed, which may be sufficient for device applications. In addition, the applicability of different Al2O3 microstructures in the SAB method was investigated, and the effectiveness of applying ALD Al2O3 was experimentally verified. This successful SAB of Al2O3 thin films, which is a promising insulator material, opens the possibility of future room-temperature heterogenous integration and wafer-level packaging. [ABSTRACT FROM AUTHOR]

Published
2023
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22. The feasibility of Gazefinder under 12 months of age infants

Author

Shuntaro Fukushima, Tomoo Takahashi, Tsukamoto, Kazuki, Matsumura, Misaki, Takigawa, Ryo, Sakai, Yasuo, MANIWA, Kyohei, MURPHY, LYNNE, Taketani, Takeshi, Shuntaro Fukushima, Tomoo Takahashi, Tsukamoto, Kazuki, Matsumura, Misaki, Takigawa, Ryo, Sakai, Yasuo, MANIWA, Kyohei, MURPHY, LYNNE, and Taketani, Takeshi

Published
2021

32. Bonding of LiNbO3 and Si wafers at room temperature using Si nanolayers.

Author

Watanabe, Kaname, Utsumi, Jun, and Takigawa, Ryo

Abstract

We report the room temperature bonding of LiNbO3 and Si wafers based on the use of Si nanolayers. The proposed method employs physical sputtering, which simultaneously activates the surface of an etched Si wafer and forms a Si nanolayer on the surface of a LiNbO3 wafer. Following sputtering, both wafers are immediately brought into contact and the newly formed Si nanolayer acts as a nanoadhesive. The data presented herein demonstrate that this technique is more effective at directly bonding LiNbO3 and Si than the conventional surface-activated bonding method. Following activation, the bonded surface energy, which reflects the bond strength, was estimated to be approximately 2.2 J m−2. This result indicates that the bonding was strong enough to withstand the processes associated with the fabrication of microelectronics devices, including wafer thinning. [ABSTRACT FROM AUTHOR]

Published
2021
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