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14. Interface and Defect Control for Group IV Channel Engineering

15. (Invited) Assessment of Ge1-xSnx Alloys for Strained Ge CMOS Devices

36. Positional dependence of defect distribution in semipolar hydride vapor phase epitaxy-GaN films grown on patterned sapphire substrates

41. Crystalline property analysis of semipolar (20-21) GaN on (22-43) patterned sapphire substrate by X-ray microdiffraction and transmission electron microscopy

50. (Invited) GeSn Technology: Impact of Sn on Ge CMOS Applications

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