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In this study, we prepared Q-carbon by adjusting the sp3 content in diamond-like carbon (DLC) films and the laser energy density of pulsed laser annealing (PLA). The amorphous DLC films were fabricated on sapphire Al2O3(0001) substrates using a pulsed laser deposition technique with a KrF excimer laser (λ = 248 nm). The sp3 content in the films varied between 20% and 42% by changing the laser energy density. Subsequently, PLA was performed on the DLC films by using the KrF excimer laser with energy densities between 0.5 and 1.2 J/cm2. The prepared films were characterized using scanning electron microscopy, Raman spectroscopy, and magnetization measurements. Consequently, for the combination of 20% sp3 content and laser density of 1.0 J/cm2, as well as 42% sp3 and 0.5 J/cm2, the films showed the characteristic features of Q-carbon: filamentary nanostructures, the presence of a T band in the Raman spectrum, room-temperature ferromagnetic behavior, and ∼80% sp3 content. The results indicate that Q-carbon can be obtained by using a proper combination of sp3 content in DLC films and an appropriate PLA energy density. This study provides important guidance for establishing a preparation method for Q-carbon.

Data-driven exploration for pressure-induced superconductors was performed based on the high-throughput first-principles screening of electronic band structures. In the screening conditions, we foc...

A two-dimensional nanocarbon, graphene, has attracted substantial interest due to its excellent properties. The reduction of graphene oxide (GO) has been investigated for the mass production of gra...

Diamond has two crystallographically inequivalent sites in the unit cell. In doped diamond, dopant occupation in the two sites is expected to be equal. Nevertheless, preferential dopant occupation during growth under nonequilibrium conditions is of fundamental importance, for example, to enhance the properties of nitrogen-vacancy (N-V) centers; therefore, this is a promising candidate for a qubit. However, the lack of suitable experimental techniques has made it difficult to study the crystal- and chemical-site-resolved local structures of dopants. Here, we confirm the identity of two chemical sites with asymmetric dopant incorporation in the diamond structure, via the photoelectron holography (PEH) of heavily phosphorus (P)-doped diamond prepared by chemical vapor deposition. One is substitutionally incorporated P with preferential site occupations and the other can be attributed to a PV split vacancy complex with preferential orientation. The present study shows that PEH is a valuable technique to study the local structures around dopants with a resolution of crystallographically inequivalent but energetically equivalent sites/orientations. Such information provides strategies to improve the properties of dopant related-complexes in which alignment is crucial for sensing of magnetic field or quantum spin register using N-V centers in diamond.

We present multilayer formation via spinodal decomposition in rutile TiO2-VO2 (TVO) epitaxial films on sapphire substrates. (001)- and (101)-oriented TVO solid-solution films are grown epitaxially on TiO2/Al2O3 using a pulsed laser deposition technique and annealed inside the spinodal region. X-ray diffraction measurements and scanning transmission electron microscopy (STEM) observations show that the films are phase-separated along the [001] direction and lamellar structures are formed in a parallel or slanted direction to the sapphire substrates depending on the film orientation. The results indicate the multilayer formation via spinodal decomposition in the TVO films. STEM investigations also reveal a relatively high Ti concentration in the decomposed phases, reflecting the influence of lattice deformation on the phase decomposition in the films. Our work shows that spinodal decomposition is a promising approach for the formation of a multilayer structure in TVO films and helps deepen understanding the spinodal decomposition in TVO system.

Since the first observation of the metal-to-insulator transition (MIT), VO2 has attracted substantial attention in terms of whether this transition is impelled by electron–phonon interaction (Peierls transition) or electron–electron interaction. Regarding Peierls transition, it has been theoretically predicted that the Fermi surface (FS) cross-section exhibits certain nesting features for a metallic phase of VO2. Various experimental studies related to the nesting feature have been reported. Nevertheless, there is no experimental result on FS topology. In this work, we determine the FS topology of the metallic phase of VO2 through studies of VO2 epitaxial thin films on TiO2(001) substrates, using synchrotron radiation angle-resolved photoemission spectroscopy (ARPES). Three electron pockets around Γ are observed in band structures along the Γ–X direction. These three bands form electron surfaces around Γ in the ΓXRZ plane. Furthermore, the lowest energy band FS exhibits the nesting feature corresponding to a nesting vector $$\overrightarrow{q}$$ q → = ΓR, as predicted by the calculation. Our results strongly indicate the formation of the charge-density wave with $$\overrightarrow{q}$$ q → = ΓR and thus, the importance of Peierls transition for the mechanism of the MIT in VO2.

Recently, ammonia-thermal reaction has been used for molecular intercalation in layered FeSe, resulting a new Lix(NH3)yFe2Se2 superconductor with Tc ~ 45 K. Here, we have used temperature dependent extended x-ray absorption fine structure (EXAFS) to investigate local atomic displacements in single crystals of this new superconductor. Using polarized EXAFS at Fe K-edge we have obtained direct information on the local Fe-Se and Fe-Fe bondlengths and corresponding mean square relative displacements (MSRD). We find that the Se-height in the intercalated system is lower than the one in the binary FeSe, suggesting compressed FeSe4 tetrahedron in the title system. Incidentally, there is hardly any effect of the intercalation on the bondlengths characteristics, revealed by the Einstein temperatures, that are similar to those found in the binary FeSe. Therefore, the molecular intercalation induces an effective compression and decouples the FeSe slabs. Furthermore, the results reveal an anomalous change in the atomic correlations across Tc, appearing as a clear decrease in the MSRD, indicating hardening of the local lattice mode. Similar response of the local lattice has been found in other families of superconductors, e.g., A15-type and cuprates superconductors. This observation suggests that local atomic correlations should have some direct correlation with the superconductivity.

We have performed soft x-ray spectroscopy in order to study the photoirradiation time dependence of the valence band structure and chemical states of layered transition metal nitride chloride TiNCl. Under the soft x-ray irradiation, the intensities of the states near the Fermi level (E F) and the Ti3+ component increased, while the Cl 2p intensity decreased. Ti 2p–3d resonance photoemission spectroscopy confirmed a distinctive Fermi edge with Ti 3d character. These results indicate the photo-induced metallization originates from deintercalation due to Cl desorption, and thus provide a new carrier doping method that controls the conducting properties of TiNCl.

The ${\mathrm{BiS}}_{2}$-based layered materials are characterized by a highly susceptible physical state, revealing a large response to external conditions. A particular case is the ${\mathrm{EuFBiS}}_{2}$ compound, showing a superconducting transition temperature ${T}_{c}\ensuremath{\sim}0.3$ K at ambient pressure. Upon increasing external pressure, ${T}_{c}$ goes through a large amplification, accompanied by a structural phase transition (SPT) from tetragonal to monoclinic symmetry. Here, we use a combination of Eu ${\phantom{\rule{4pt}{0ex}}L}_{3}$ - edge x-ray absorption spectroscopy and synchrotron x-ray diffraction to unveil the evolution of the Eu valence and lattice symmetry under high pressure. We find that the average Eu valence increases gradually with pressure, exhibiting a pressure plateau near the SPT, at which the ${T}_{c}$ increases sharply. Since in ${\mathrm{EuFBiS}}_{2}$ the charge carriers are introduced via self-doping induced by the mixed valence of the Eu ions, our findings clearly indicate that the role of the charge doping is marginal in the ${T}_{c}$ enhancement. On the other hand, the structural distortions, taking place at the SPT, play a central role in enhancing the superconducting properties of the ${\mathrm{EuFBiS}}_{2}$ system.

Skewed band structures have been empirically described in ferroelectric materials to explain the functioning of recently developed ferroelectric tunneling junction (FTJs). Nonvolatile ferroelectric random access memory (FeRAM) and the artificial neural network device based on the FTJ system are rapidly developing. However, because the actual ferroelectric band structure has not been elucidated, precise designing of devices has to be advanced through appropriate heuristics. Here, we perform angle-resolved hard X-ray photoemission spectroscopy of ferroelectric BaTiO3 thin films for the direct observation of ferroelectric band skewing structure as the depth profiles of atomic orbitals. The depth-resolved electronic band structure consists of three depth regions: a potential slope along the electric polarization in the core, the surface and interface exhibiting slight changes. We also demonstrate that the direction of the energy shift is controlled by the polarization reversal. In the ferroelectric skewed band structure, we found that the difference in energy shifts of the atomic orbitals is correlated with the atomic configuration of the soft phonon mode reflecting the Born effective charges. These findings lead to a better understanding of the origin of electric polarization.

CsBi

Recently CeOBiS2 system without any fluorine doping is found to show superconductivity posing question on its origin. Using space resolved ARPES we have found a metallic phase embedded in the morphological defects and at the sample edges of stoichiometric CeOBiS2. While bulk of the sample is semiconducting, the embedded metallic phase is characterized by the usual electron pocket at X point, similar to the Fermi surface of doped BiS2-based superconductors. Typical size of the observed metallic domain is larger than the superconducting correlation length of the system suggesting that the observed superconductivity in undoped CeOBiS2 might be due to this embedded metallic phase at the defects. The results also suggest a possible way to develop new systems by manipulation of the defects in these chalcogenides with structural instability.

We have investigated the electronic states and spin polarization of half-metallic ferromagnet CrO$_2$ (100) epitaxial films by bulk-sensitive spin-resolved photoemission spectroscopy with a focus on non-quasiparticle (NQP) states derived from electron-magnon interactions. We found that the averaged values of the spin polarization are approximately 100% and 40% at 40 K and 300 K, respectively. This is consistent with the previously reported result [H. Fujiwara et al., Appl. Phys. Lett. 106, 202404 (2015).]. At 100 K, peculiar spin depolarization was observed at the Fermi level ($E_{F}$), which is supported by theoretical calculations predicting NQP states. This suggests the possible appearance of NQP states in CrO$_2$. We also compare the temperature dependence of our spin polarizations with that of the magnetization., Comment: 8 pages, 3 figures, VUVX 2016

Understanding and controlling atomic motions in solid are essential in ionic materials, such as ion conductors, electrolyte and electrodes of batteries, and gas separators. Although photoinduced proton transport in solid materials has been demonstrated, photoinduced transport of heavier ions, such as the oxide ion, in solid materials remains entirely elusive. Herein, we apply ultrafast time-resolved electron diffraction to observe the large displacement of oxide ions in a strongly correlated material, EuBaCo2O5.39, under near-ultraviolet photoexcitation at room temperature. The mechanism of the photoinduced transport of oxide ions is revealed via the combination of ultrafast optical spectroscopy and density functional theory calculations. Our findings show that photoexcitation induces ionic motions in a ceramic crystal at room temperature through the charge transfer that strongly couples with large ionic displacement under the nonequilibrium condition.

The effects of aliovalent dopants on the kinetics of spinodal decomposition in a rutile-type TiO2-VO2 system were studied by means of x-ray diffraction and transmission electron microscopy. In this study, as-prepared polycrystalline samples were annealed at 673 k inside the spinodal. For undoped samples, phase decomposition occurred along the [001] direction, and a lamellar structure formed on the nanometer length scale. The phase decomposition kinetics in this system were sensitive to the type of aliovalent dopant; the decomposition rate in a sample doped with Al2O3 was more than one order of magnitude higher than a sample doped with Nb2O5. These observations could be explained on the basis of the premise that cation interstitial mobility is greater than cation vacancy mobility. The obtained results are consistent with those for a TiO2-SnO2 system, indicating that phase separation in both rutile-type oxide systems can be interpreted through a common framework.

We have studied the valence electronic structure of Ag1-xSn1+xSe2 (x = 0.0, 0.1, 0.2, 0.25) and SnSe (x = 1.0) by a combined analysis of X-ray absorption spectroscopy (XAS) and X-ray photoemission spectroscopy (XPS) measurements. Both XAS and XPS reveal an increase in electron carriers in the system with x (i.e. excess Sn concentration) for 0 ≤ x ≤ 0.25. The core-level spectra (Sn 3d, Ag 3d and Se 3d) show that the charge state of Ag is almost 1+, while that of of Sn splits into Sn2+ and Sn4+ (providing clear evidence of valence skipping for the first time) with a concomitant splitting of Se into Se2- and Se2-δ states. The x dependence of the split components in Sn and Se together with the Se-K edge XAS reveals that the Se valence state may have an essential role in the transport properties of this system.

We systematically investigated the pressure dependence of electrical transport and the crystal structure of topological insulator, $\mathrm{B}{\mathrm{i}}_{2\ensuremath{-}x}\mathrm{S}{\mathrm{b}}_{x}\mathrm{T}{\mathrm{e}}_{3\ensuremath{-}y}\mathrm{S}{\mathrm{e}}_{y}$, which showed no superconductivity down to 2.0 K at ambient pressure. The $\mathrm{B}{\mathrm{i}}_{2\ensuremath{-}x}\mathrm{S}{\mathrm{b}}_{x}\mathrm{T}{\mathrm{e}}_{3\ensuremath{-}y}\mathrm{S}{\mathrm{e}}_{y}$ crystal showed two structural phase transitions under pressure, from rhombohedral structure (space group No. 166, $R\overline{3}m$, termed phase I) to monoclinic structure (space group No. 12, $C2/m$, termed phase II), and from phase II to another monoclinic structure (space group No. 12, $C2/m$, termed phase III). Superconductivity appeared when applying pressure; actually the superconductivity of all $\mathrm{B}{\mathrm{i}}_{2\ensuremath{-}x}\mathrm{S}{\mathrm{b}}_{x}\mathrm{T}{\mathrm{e}}_{3\ensuremath{-}y}\mathrm{S}{\mathrm{e}}_{y}$ samples emerged in phase I. The superconducting transition temperature, ${T}_{\mathrm{c}}$, increased against pressure in a pressure range of 0--15 GPa for all $\mathrm{B}{\mathrm{i}}_{2\ensuremath{-}x}\mathrm{S}{\mathrm{b}}_{x}\mathrm{T}{\mathrm{e}}_{3\ensuremath{-}y}\mathrm{S}{\mathrm{e}}_{y}$ samples, and the maximum ${T}_{\mathrm{c}}$ was 5.45 K, recorded at 13.5 GPa in $\mathrm{B}{\mathrm{i}}_{2\ensuremath{-}x}\mathrm{S}{\mathrm{b}}_{x}\mathrm{T}{\mathrm{e}}_{3\ensuremath{-}y}\mathrm{S}{\mathrm{e}}_{y}$ at $x=0$ and $y=1.0$. The magnetic field (H) dependence of the R--T plot for $\mathrm{B}{\mathrm{i}}_{2\ensuremath{-}x}\mathrm{S}{\mathrm{b}}_{x}\mathrm{T}{\mathrm{e}}_{3\ensuremath{-}y}\mathrm{S}{\mathrm{e}}_{y}$ was measured to characterize the superconducting pairing mechanism of pressure-induced superconducting phase.

A two-dimensional nanocarbon, graphene, has attracted substantial interest due to its excellent properties. The reduction of graphene oxide (GO) has been investigated for the mass production of graphene used in practical applications. Different reduction processes produce different properties in graphene, affecting the performance of the final materials or devices. Therefore, an understanding of the mechanisms of GO reduction is important for controlling the properties of functional two-dimensional systems. Here, we determined the average structure of reduced GO prepared

Doping is an important technology for modern science. For example, to create a semiconductor device, a circuit is formed by controlling carriers by doping. It is important to search for appropriate conditions since the carrier emission from dopant differs depending on the doping conditions. The atomic arrangement around the dopant differs depending on the conditions. Therefore, it has been desired to observe the atomic arrangement around the dopant, but it has been difficult with conventional measurement methods. The atomic resolution holography such as photoelectron holography, x-ray fluorescence holography, neutron holography, which are methods that can measure the three-dimensional (3D) atomic arrangement of the dopant. Among them, photoelectron holography can measure the atomic structure of each dopant depending on the chemical state. We have built photoelectron holography apparatuses at BL25SU in SPring-8. We also developed a software platform 3D-AIR-IMAGE for data processing, simulation of photoelectron holograms, and 3D atomic image reconstruction.

Electron-doped TiNCl is a superconductor, for which exotic mechanisms of the superconductivity have been discussed. However, difficulty in preparing large single-phase samples has prevented the direct observation of its electronic structure and how that changes with electron doping. In this study, micro-photoemission spectroscopy ({\mu}-PES) was used to reveal the electronic structures of TiNCl and Na-intercalated TiNCl (Na-TiNCl). Comparison of Ti 2p core-level spectra shows the enhancement of a spectral feature in Na-TiNCl that suggests an increase in its metallic character. This indicates the introduction of electron carriers to the TiNCl layers. Although the overall valence band electronic structure of parent TiNCl could be reproduced by first-principle calculations, that of Na-TiNCl showed a marked deviation from the rigid band model near the Fermi level (EF). The spectral shape observed near EF of Na-TiNCl was found to be similar to a result in early transition metal oxides that has been attributed to the effect of strong electron correlation. The present study also demonstrated the usefulness of {\mu}-PES to obtain reliable electronic structure data for samples that are difficult to make at large sizes., Comment: 14 page, 5 figures

Diamond is a popular material, not only as a gem but also for basic and applied research owing to its extraordinary properties. The discovery of superconductivity in heavily doped diamond has increased its importance. Although the highest superconducting critical temperature (Tc) is 10 K, it is regarded as a superconductor with a potentially high Tc, owing to the strong covalent bonding between carbon atoms and the light atomic mass of carbon. In this chapter, after reviewing the fundamentals of the electronic states of pristine and doped diamond, we describe the electronic states, together with the vibrational properties, of boron-doped superconductive diamond, which have been revealed by photoemission spectroscopy and other experimental techniques.

Spectroscopic techniques, including photoelectron spectroscopy, diffuse reflectance, and x-ray absorption, are used to investigate the electronic structure and the local structure of LaOBiS$_{2-x}$Se$_x$ thermoelectric material. It is found that Se substitution effectively suppresses local distortion, that can be responsible for the increased carrier mobility together with a change in the electronic structure. The results suggest a possible way to control thermoelectric properties by tuning of the local crystal structure of these materials., Comment: 6 pages, 4 figures, 1 table, J. Appl. Phys. (in press)

Stoichiometric ${\mathrm{EuFBiS}}_{2}$ with mixed valent Eu shows self-doped superconductivity at low temperatures due to the Eu-to-Bi charge transfer. The metallic/nonmetallic bistability of the ${\mathrm{BiS}}_{2}$ layer can couple with the valence fluctuation of Eu and provide a highly susceptible electronic state. Here, we report space-resolved photoemission measurements on ${\mathrm{EuFBiS}}_{2}$ revealing an inhomogeneous charge distribution with the coexistence of metallic and nonmetallic phases at mesoscopic length scales. Angle-resolved photoemission measurements using a submicron beam size have confirmed a clear Fermi surface around the zone boundaries in the metallic region, typically observed in a doped system, while it can be hardly seen in the nonmetallic region. Density functional theory calculations suggest that the out-of-plane S atom position in the structure is one of the important factors for the self-doping in this material.

NaSn(2)As(2 )is mechanically exfoliable layered van der Waals (vdW) Zintl phase that is getting interesting due to its low thermal conductivity and recently observed superconductivity. Here, we have investigated the temperature dependent local structure of NaSn2As2 by a combined analysis of As K-edge and Sn K-edge extended x-ray absorption fine structure measurements. The system is intrinsically disordered with the interatomic distances largely consistent to those estimated by average structure measurements. The stretching force constants of different bond distances have been determined using temperature dependent mean square relative displacements. The Sn-As distance is the strongest bond in this system, having covalent nature, unlike the weaker interlayer distances which are characterized by vdW type bonding. Among them, As-Na distance is slightly weaker than Sn-Sn(i) below similar to 200 K and tends to get stronger above this temperature. The anomalous behavior of As-Na bond suggests that the mechanical exfoliation in this system is likely to be temperature dependent. The anomaly in the interlayer atomic correlations may be due to a charge density wave-like instability around this temperature, indicated by earlier experiments. The local structure and disorder are discussed in relation to the physical properties of NaSn2As2.

We report an angle-resolved photoemission spectroscopy study on NaSn2As2 in which a Sn 5p band is expected to provide interesting Fermi surface geometry with hole-like and electron-like curvatures....

TaO2 thin films were prepared using rutile-type NbO2 template layers on Al2O3(0001) substrates by a pulsed laser deposition technique. The structural and electronic properties of the films were characterized by performing four-circle X-ray diffraction (XRD) and X-ray photoemission spectroscopy (XPS) measurements. Four-circle XRD measurements revealed the formation and epitaxial growth of (100)-oriented tetragonal TaO2 on the NbO2 template layers. On the other hand, XPS measurements showed two kinds of valence states, namely Ta4 + and Ta5 + in the surface region of the film. The results from the XRD and XPS measurements suggest that the film is composed of epitaxially grown TaO2 with an amorphous Ta2O5 surface layer. It is found from control experiments that the NbO2 template layers play an important role in inducing the crystallization of the TaO2 films and promoting the formation of Ta4 + in the films deposited thereon. The results indicate the effectiveness of the NbO2 template layers for the formation of TaO2 thin films. Our work presents a promising method for the preparation of TaO2 thin films and provides a starting point for further research on TaO2.

We investigate the influence of lattice strain in the c-axis direction on spinodal decomposition in rutile TiO2-VO2 films on TiO2(100) substrates. The [100]-oriented Ti0.4V0.6O2 (TVO) solid-solution films are fabricated on rutile TiO2(100) substrates using a pulsed laser deposition with a KrF excimer laser, and are annealed inside the spinodal region. X-ray diffraction and scanning transmission electron microscopy are employed for characterization. Consequently, the in-plane tensile strain in the c-axis direction promotes the Ti-V interdiffusion in TVO/TiO2(100) under thermal annealing. In contrast, relaxation of the tensile strain results in the occurrence of spinodal decomposition along the c-axis direction in the film. These results indicate that the relaxation of the tensile strain in the c-axis direction is critically important for enabling spinodal decomposition in TVO/TiO2(100). Our work helps deepen the understanding of spinodal decomposition in the TVO film and provides information on achieving novel nanostructures via spinodal decomposition in TVO/TiO2(100).

CsBi4-x Pb x Te6 is synthesized and the superconductivity associated with the structural transition from Pb substitution is studied. Photoemission spectroscopy measurements are performed in order to elucidate the relationship between the electronic structure and the occurrence of the superconductivity. When Bi is substituted with Pb, an electron doping-like change in the electronic structure is directly observed which is contrary to the naive expectation of hole doping. This observation is consistent with band structure calculations and appears to be a unique characteristic of CsBi4-x Pb x Te6 because of the dissociation of Bi dimers upon Pb substitution. These results indicate that it may be possible to control the electron and hole doping via manipulating the Bi dimers through Pb substitution.

Using high-resolution spin-resolved photoemission spectroscopy, we observed a thermal spin depolarization to which all spin-polarized electrons contribute. Furthermore we observed a distinct minority spin state near the Fermi level and a corresponding depolarization that seldom contributes to demagnetization. The origin of this depolarization has been identified as the many-body effect characteristics of half-metallic ferromagnets. Our investigation opens an experimental field of itinerant ferromagnetic physics focusing on phenomena with sub-meV energy scale., 19 pages, 10 figures

The local structures of 122-type paradium arsenides, namely BaPd2As2 and SrPd2As2, are examined by As K-edge extended x-ray absorption fine structure measurements to find a possible correlation between the variation of their superconducting transition temperature and the local structure. The local atomic distances are found to be consistent with average distances measured by diffraction techniques. The temperature dependence of mean square relative displacements reveal that, while BaPd2As2 is characterized by a local As-Pd soft mode, albeit with larger atomic disorder, SrPd2As2 shows anomalous As-Pd correlations with a kink at similar to 160 K due to hardening by raising temperature. We have discussed implications of these results and possible mechanisms of differing superconducting transition temperature in relation with the structural instability.

The local structure of correlated spin-orbit insulator Sr2-xMxIrO4 (M = K, La) has been investigated by Ir L3-edge extended X-ray absorption fine structure measurements. The measurements were performed as a function of temperature for different dopings induced by substitution of Sr with La or K. It is found that Ir-O bonds have strong covalency and they hardly show any change across the Néel temperature. In the studied doping range, neither Ir-O bonds nor their dynamics, measured by their mean square relative displacements, show any appreciable change upon carrier doping, indicating the possibility of nanoscale phase separation in the doped system. On the other hand, there is a large increase of the static disorder in Ir-Sr correlation, larger for K doping than La doping. Similarities and differences with respect to the local lattice displacements in cuprates are briefly discussed.

The temperature dependence of the resistivity (ρ) of Ag-doped Bi2Se3 (AgxBi2−xSe3) shows insulating behavior above 35 K, but below 35 K, ρ suddenly decreases with decreasing temperature, in contrast to the metallic behavior for non-doped Bi2Se3 at 1.5–300 K. This significant change in transport properties from metallic behavior clearly shows that the Ag doping of Bi2Se3 can effectively tune the Fermi level downward. The Hall effect measurement shows that carrier is still electron in AgxBi2−xSe3 and the electron density changes with temperature to reasonably explain the transport properties. Furthermore, the positive gating of AgxBi2−xSe3 provides metallic behavior that is similar to that of non-doped Bi2Se3, indicating a successful upward tuning of the Fermi level.

The local structure of correlated spin-orbit insulator Sr$_{2-x}$M$_x$IrO$_4$ (M = K, La) has been investigated by Ir L$_3$-edge extended x-ray absorption fine structure measurements. The measurements were performed as a function of temperature for different dopings induced by substitution of Sr with La or K. It is found that Ir-O bonds have strong covalency and they hardly show any change across the N\'eel temperature. In the studied doping range, neither Ir-O bonds nor their dynamics, measured by their mean square relative displacements, show any appreciable change upon carrier doping, indicating possibility of a nanoscale phase separation in the doped system. On the other hand, there is a large increase of the static disorder in Ir-Sr correlation, larger for K doping than La doping. Similarities and differences with respect to the local lattice displacements in cuprates are briefly discussed., Comment: Main text: 6 pages, 4 figures, Supplemental information: 2 pages, 2 figures

We have studied the valence electronic structure of Ag

‘Aromatic hydrocarbon’ implies an organic molecule that satisfies the (4 n + 2) π-electron rule and consists of benzene rings. Doping solid aromatic hydrocarbons with metals provides the superconductivity. The first discovery of such superconductivity was made for K-doped picene (K x picene, five benzene rings). Its superconducting transition temperatures ( T c ’s) were 7 and 18 K. Recently, we found a new superconducting K x picene phase with a T c as high as 14 K, so we now know that K x picene possesses multiple superconducting phases. Besides K x picene, we discovered new superconductors such as Rb x picene and Ca x picene. A most serious problem is that the shielding fraction is ⩽15% for K x picene and Rb x picene, and it is often ∼1% for other superconductors. Such low shielding fractions have made it difficult to determine the crystal structures of superconducting phases. Nevertheless, many research groups have expended a great deal of effort to make high quality hydrocarbon superconductors in the five years since the discovery of hydrocarbon superconductivity. At the present stage, superconductivity is observed in certain metal-doped aromatic hydrocarbons (picene, phenanthrene and dibenzopentacene), but the shielding fraction remains stubbornly low. The highest priority research area is to prepare aromatic superconductors with a high superconducting volume-fraction. Despite these difficulties, aromatic superconductivity is still a core research target and presents interesting and potentially breakthrough challenges, such as the positive pressure dependence of T c that is clearly observed in some phases of aromatic hydrocarbon superconductors, suggesting behavior not explained by the standard BCS picture of superconductivity. In this article, we describe the present status of this research field, and discuss its future prospects.