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We experienced a rare case of anterior dislocation of the tibia after total knee arthroplasty (TKA). A 61-year-old female, suffering from RA, was treated with left TKA with Mark IV at another hospital in 1997. After operation, joint laxity of her left knee appeared, and for which wore a knee outfit for 2 months. She noticed left knee pain for no apparent reason in March in the 2000. She came to our hospital in September due to increased knee pain. We found anterior dislocation of the tibia and an old fracture of the fibula in roentgenogram, and manual reduction failed. We were alde to reduce the knee joint during surgery by flexing it, but dislocation easily occurred by extending the knee joint. Although the posterior part of UHMWPE of the tibial conponent was worn out, both collateral ligaments were not lax in the reduced position. We performed revision TKA with Nexgen-LPS. 10 weeks after surgery, she was able to walk without brace and the ROM of her left knee was 0° in extension and 125° in flexion.

Case 1: A 12-year-old boy complained of right buttock pain and high fever. Radiographic examinations demonstrated osteolytic lesion in his right iliac bone. He was treated with several antibiotics and his symptoms disappeared for two months. However, the fever increased again and atypical lymphocytes appeared in peripheral blood. Acute lymphoblastic leukemia (ALL) was diagnosed by myelocentesis.Case 2: A 3-year-old girl complained of right leg pain and high fever. Radiographic examinations demonstrated osteolytic lesion and periosteal reaction in her right tibia. She was treated with several antibiotics and her symptoms disappeared for two months. However, she suffered both fever and forearm pain again. Radiographic examinations revealed osteolytic lesions with periosteal reactions in both radius and ulna, which resembled Caffey's disease. Abnormal findings were not seen by bone biopsy and her symptom did not respond to antibiotic therapy. Atypical lymphocytes appeared in peripheral blood one week after bone biopsy and ALL was confirmed by myelocentesis.Both patients responded well to chemotherapy and have kept remission.

NAND flash memory use in digital still cameras and cellular phones is driving demand for larger-capacity storage. Moreover, NAND flash has the potential to replace HDDs. To achieve larger capacity while maintaining low cost per bit, technical improvements in feature size and area reduction are essential. To meet the stringent requirements, we develop a 16 Gb 4-level NAND flash memory in 43 nm CMOS technology. In 43 nm generation, gate-induced drain leakage (GIDL) influences the electrical field on both sides of NAND strings. GIDL causes severe program disturb problems to NAND flash memories. To avoid GIDL, two dummy wordlines (WL) on both sides of NAND strings are added. This is effective because the dummy gate voltages, are selected independent of the program inhibit voltage.