187 results on '"Taishi, Toshinori"'
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2. Angle-Resolved Photoemission Study of Lithium Solid-Electrolytes Bulk Single Crystals
3. Effective thermal conductivity of poly-silicon chunks and its size dependence in a melting process of silicon Czochralski crystal growth: Part 1. Temperature measurements
4. Effective thermal conductivity of poly-silicon chunks and its size dependence in a melting process of silicon Czochralski crystal growth: Part 2. Numerical simulations and comparison with measurements
5. Evaluation of numerical simulation of constitutional supercooling during heavily Boron-Doped silicon crystal growth using Cz method
6. Growth of (1 0 0), (0 1 0) and (0 0 1) β-Ga2O3 single crystals by vertical Bridgman method
7. Effect of cobalt addition to Si–Cr solvent in top-seeded solution growth
8. The effect of the decomposition of CH4 gas on polycrystalline SiC coating on SiC ceramics using Si vapor
9. Colony structure in Ce-doped Al2O3/YAG eutectic systems grown by vertical Bridgman technique
10. Line-shaped defects in bulk β-Ga2O3 single crystals grown by the vertical Bridgman method
11. The growth of Al2O3/YAG:Ce melt growth composite by the vertical Bridgman technique using an a-axis Al2O3 seed
12. Influence of Ge composition in the Cu2Sn1−xGexS3 thin-film photovoltaic absorber prepared by sulfurization of laminated metallic precursor
13. Lithiation/Delithiation of Silicon Heavily Doped with Boron Synthesized Using the Czochralski Process
14. Development of the vertical Bridgman technique for 6-inch diameter c-axis sapphire growth supported by numerical simulation
15. Contact angle of sapphire melt and bubble generation on crucible material
16. Constitutional supercooling in heavily As-doped Czochralski Si crystal growth
17. Growth of potassium tantalate (KTaO3) crystals by directional solidification
18. Demonstration of crack-free c-axis sapphire crystal growth using the vertical Bridgman method
19. p-type conductivity control of heteroepitaxially grown ZnO films by N and Te codoping and thermal annealing
20. Czochralski growth techniques of germanium crystals grown from a melt covered partially or fully by liquid B2O3
21. Oxygen in Ge crystals grown by the B2O3 encapsulated Czochralski method
22. The Growth of Potassium Tantalate Niobate (KTa xNb1-xO3 ) Single Crystal by Vertical Bridgman Method
23. Fabrication of flower-shaped Bi 2O 3 superstructure by a facile template-free process
24. Mild hydrothermal treatment to prepare highly dispersed multi-walled carbon nanotubes
25. Oxygen doped Ge crystals Czochralski-grown from the B 2O 3-fully-covered melt
26. Equilibrium segregation coefficient and solid solubility of B in Czochralski Ge crystal growth
27. Czochralski-growth of germanium crystals containing high concentrations of oxygen impurities
28. Polycrystalline SiC coating on large-sized SiC ceramics using Si vapor
29. Behavior of dislocations due to thermal shock and critical shear stress of Si in Czochralski crystal growth
30. Reduction of grown-in dislocation density in Ge Czochralski-grown from the B 2O 3-partially-covered melt
31. Single crystal growth of langataite (La 3Ta 0.5Ga 5.5O 14) by vertical Bridgman (VB) method along [2 1¯ 1¯0] in air and in an Ar atmosphere
32. Dopant Effect on Lithiation/Delithiation of Highly Crystalline Silicon Synthesized Using the Czochralski Process
33. Influence of seed/crystal interface shape on dislocation generation in Czochralski Si crystal growth
34. Si multicrystals grown by the Czochralski method with multi-seeds
35. Influence of crystalline defects in Czochralski-grown Si multicrystal on minority carrier lifetime
36. Single-crystal growth of langasite (La 3Ga 5SiO 14) by the vertical Bridgman (VB) method in air and in an Ar atmosphere
37. Segregation of Ga during growth of Si single crystal
38. The Characteristic of the La3Ga5SiO14 Single Crystal Grown by Vertical Bridgman Method in Ar Atmosphere
39. Behavior of the edge dislocation propagating along the growth direction in Czochralski Si crystal growth
40. Investigation of methods for doping CZ silicon with gallium
41. Robust Si wafer
42. Heavily doped silicon crystals: neckless growth and robust wafers
43. Computational study of formation mechanism of impurity distribution in a silicon crystal during solidification
44. Dislocation-free Czochralski Si crystal growth without a thin neck: dislocation behavior due to incomplete seeding
45. The effect of Al addition to a Cr solvent without molten Si on the surface morphology in a solution growth of SiC
46. Dislocation behavior in heavily germanium-doped silicon crystal
47. Behavior of dislocations due to thermal shock in B-doped Si seed in Czochralski Si crystal growth
48. Relationship between characteristics of defects in CZ-Si crystals and V/ G ratios by multi-chroic infrared light scattering tomography
49. Influence of Ge composition in the Cu2Sn1-xGexS3 thin-film photovoltaic absorber prepared by sulfurization of laminated metallic precursor
50. Measurement of temperature gradient in Czochralski silicon crystal growth
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