1. A pressure-induced superhard SiCN4 compound uncovered by first-principles calculations.
- Author
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Chengyu Wang, Guoliang Yu, Shoutao Zhang, Yu Zhao, Hui Chen, Taimin Cheng, and Xinxin Zhang
- Abstract
Silicon--carbon--nitride (Si--C--N) compounds are a family of potential superhard materials with many excellent chemical and physical properties; however, only SiCN, Si
2 CN4 and Si2 CN4 were synthesized. Here, we theoretically report a new SiCN4 compound with P41 21 2, Fdd2 and R3 structures by firstprinciples structural predictions based on the particle swarm optimization algorithm. Pressure-induced structural phase transitions from P41 21 2 to Fdd2, and then to the R%3 phase were determined at 2 GPa and 249 GPa. By comparing enthalpy differences with 1/3Si3 N4 + C + 4/3N2 , it was found that these structures tend to decompose at ambient pressure. However, with the increase of pressure, the enthalpy differences of Fdd2 and R3 structures turn to be negative and they can be stabilized at a pressure of more than 41 GPa. They are also dynamically stable as no imaginary frequencies were found in their stabilized pressure ranges. The calculated band gap is 4.37 eV for P41 21 2, 3.72 eV for Fdd2 and 3.81 eV for the R%3 phase by using the Heyd--Scuseria--Ernzerhof (HSE06) method and the estimated Vickers hardness values are higher than 40 GPa by adopting the elastic modulus based hardness formula, which confirmed their superhard characteristics. These results provide significant insights into Si--C--N systems and will inevitably promote the future experimental works. [ABSTRACT FROM AUTHOR]- Published
- 2024
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